Switching Characteristics due to the Impurity Concentration and the Channel Length in Lateral MOS-controlled Thyristor
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Kim, Nam-Soo
(충북대학교 전기전자공학부)
Cui, Zhi-Yuan (충북대학교 전기전자공학부) Lee, Kie-Yong (충북대학교 전기전자공학부) Ju, Byeong-Kwon (한국과학기술연구원 마이크로시스템) Jeong, Tae-Woong (충북대학교 전기전자공학부) |
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