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http://dx.doi.org/10.4313/JKEM.2005.18.1.017

Switching Characteristics due to the Impurity Concentration and the Channel Length in Lateral MOS-controlled Thyristor  

Kim, Nam-Soo (충북대학교 전기전자공학부)
Cui, Zhi-Yuan (충북대학교 전기전자공학부)
Lee, Kie-Yong (충북대학교 전기전자공학부)
Ju, Byeong-Kwon (한국과학기술연구원 마이크로시스템)
Jeong, Tae-Woong (충북대학교 전기전자공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.1, 2005 , pp. 17-23 More about this Journal
Abstract
The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.
Keywords
MCT; Channel length; Impurity concentration; Latch-up current; Switching characteristics;
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