• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.88-92
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• 1990

An accurate analytical threshold model is presented for fully depleted SOI which has a Metal-Insulator-Semiconductor-Insulator-Metal structure. The threshold voltage is defined as the gate voltage at which the second derivative of the inversion charge with respect to the gate voltage is maximum. Therefore the model is self-consistent with the measurement scheme. Numerical simulations show good agreement with the model with less than 3% error.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.664-667
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• 2011

In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.60-64
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• 2024

The threshold voltage shift in thin-film transistors (TFTs) is modeled using stretched-exponential (SE) and stretched-hyperbola (SH) functions. These models are derived by introducing empirical parameters into reaction rate equations that describe defect generation or charge trapping caused by hydrogen diffusion in the dielectric or interface. Separately, the dielectric relaxation phenomena are also described by the same reaction rate equations based on defect diffusion. Dielectric relaxation was initially modeled using the SE model, and various models have been proposed using fractional calculus. In this study, the characteristics of the threshold voltage shift and the dielectric relaxation phenomena are compared and analyzed to explore the applicability of analytical models used in the field of dielectric relaxation, in addition to the conventional SE and SH models.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.1-7
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• 1985

In this paper, a more improved threshold voltage model dependent on drain voltage and substrate bias for short - channel enhancement - mode IGFET is presented. Especially, compared with the several recently published models, the error is sufficiently reduced with the precise analysis on the correction factor for short-channel effect and the calculated values using this model are also agreed well with the experimental data about 1$\mu$m - channel length device.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.12
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• pp.2939-2945
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• 2014

This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend greatly differs with bottom gate voltage, channel length and thickness, and doping concentration.

• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.2079-2088
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• 2014

In this paper, we propose new physically based threshold voltage models for short channel Surrounding Gate Silicon Nanowire Transistor with two different geometries. The model explores the impact of various device parameters like silicon film thickness, film height, film width, gate oxide thickness, and drain bias on the threshold voltage behavior of a cylindrical surrounding gate and rectangular surrounding gate nanowire MOSFET. Threshold voltage roll-off and DIBL characteristics of these devices are also studied. Proposed models are clearly validated by comparing the simulations with the TCAD simulation for a wide range of device geometries.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.17-23
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• 2010

In this paper, a new analytical model for deriving the threshold voltage of a short-channel bulk-type MOSFET is suggested. Using the Fourier coefficient method, the Laplace equation in the oxide region and the Poisson equation in the depleted silicon region have been solved two-dimensionally. Making use of them, the minimum surface potential is derived to describe the threshold voltage. Simulation results show good agreement with the dependencies of the threshold voltage on the various device parameters and applied bias voltages.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.1-7
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• 2009

In this paper, a simple analytical model for deriving the threshold voltage of a short-channel intrinsic-body SDG SOI MOSFET is suggested. Using the iteration method, both Laplace equations in intrinsic silicon body and gate oxide are solved two-dimensionally. Obtained potential distributions in both regions are expressed in terms of fourth and fifth-order of the coordinate perpendicular to the silicon channel direction. Making use of them, the surface potential is obtained to derive the threshold voltage in a closed-form. Simulation results show the fairly accurate dependencies of the threshold voltage on the various device parameters and applied bias voltages.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.9-16
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• 2008

In this paper, a simple analytical model for deriving the threshold voltage of a short-gate SOI MESFET is suggested. Using the iteration method, the Poisson equation in the fully depleted silicon channel and the Laplace equation in the buried oxide region are solved two-dimensionally, Obtained potential distributions in each region are expressed in terms of fifth-order of $\chi$, where $\chi$ denotes the coordinate perpendicular to the silicon channel direction. From them, the bottom channel potential is used to describe the threshold voltage in a closed-form. Simulation results show the dependencies of the threshold voltage on the various device geometry parameters and applied bias voltages.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.818-821
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.