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An Analytical Model for Deriving The Threshold Voltage of a Short-channel Bulk-type MOSFET  

Yang, Jin-Seok (School of Electronic & Electrical Eng., Hongik Univ.)
Oh, Young-Hae (School of Electronic & Electrical Eng., Hongik Univ.)
Suh, Chung-Ha (School of Electronic & Electrical Eng., Hongik Univ.)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.47, no.12, 2010 , pp. 17-23 More about this Journal
Abstract
In this paper, a new analytical model for deriving the threshold voltage of a short-channel bulk-type MOSFET is suggested. Using the Fourier coefficient method, the Laplace equation in the oxide region and the Poisson equation in the depleted silicon region have been solved two-dimensionally. Making use of them, the minimum surface potential is derived to describe the threshold voltage. Simulation results show good agreement with the dependencies of the threshold voltage on the various device parameters and applied bias voltages.
Keywords
bulk-type MOSFET; threshold voltage roll-off; short channel effect;
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