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An Analytical Model for Deriving The Threshold Voltage Expression of A Short-gate Length SOI MESFET  

Kal, Jin-Ha (School of Electronic & Electrical Eng., Hongik Univ.)
Suh, Chung-Ha (School of Electronic & Electrical Eng., Hongik Univ.)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.45, no.7, 2008 , pp. 9-16 More about this Journal
Abstract
In this paper, a simple analytical model for deriving the threshold voltage of a short-gate SOI MESFET is suggested. Using the iteration method, the Poisson equation in the fully depleted silicon channel and the Laplace equation in the buried oxide region are solved two-dimensionally, Obtained potential distributions in each region are expressed in terms of fifth-order of $\chi$, where $\chi$ denotes the coordinate perpendicular to the silicon channel direction. From them, the bottom channel potential is used to describe the threshold voltage in a closed-form. Simulation results show the dependencies of the threshold voltage on the various device geometry parameters and applied bias voltages.
Keywords
SOI(Silicon On Insulator); MESFET; threshold voltage analysis; short channel effect; DIBL;
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