• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.471-477
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• 2014

In this paper, a modeling and co-simulation methodology is proposed to predict the radiated electromagnetic interference (EMI) from on-chip switching I/O buffers. The output waveforms of I/O buffers are simulated including the on-chip I/O buffer circuit and the RC extracted on-chip interconnect netlist, package, and printed circuit board (PCB). In order to accurately estimate the EMI, a full-wave 3D simulation is performed including the measurement environment. The simulation results are compared with near-field electromagnetic scan results and far-field measurements from an anechoic chamber, and the sources of emission peaks were analyzed. For accurate far-field EMI simulation, PCB power trace models considering IC switching current paths and external power cable models must be considered for accurate EMI prediction. With the proposed EMI simulation model and flow, the electromagnetic compatibility can be tested even before the IC is fabricated.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.38 no.2
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• pp.191-198
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• 2001

As a method to compensate the deterioration of the picture quality which was caused by beam profile characteristic in the CRT and the projection screen of HD projection TV, a linear scan velocity modulation(SVM) method has been employed, whose modulation velocity is linearly proportional to the variation in the video signal amplitude. However, the effect of picture quality improvement is not uniform with video signal amplitude in the linear SVM. In this paper, for the optimum SVM effect, we analyze the beam profile characteristic on the HD projection screen and we analyze the SVM effect as function of the differentiated pulse width, the differentiated pulse amplitude and the input signal amplitude. Finally we confirm that the nonlinear SVM method is necessary to get uniform image compensation in the HD projection TV, and we implement the nonlinear SVM circuit. The performance of the realized SVM circuit with nonlinear amplitude transfer characteristic is confirmed as uniform improvements in picture quality.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.58-65
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• 2007

As multimedia portable devices become popular, the amount of computation for processing data including video compression has significantly increased. Various researches for low power consumption of the mobile devices and real time processing have been reported. Motion Estimation is responsible for 67% of H.264 encoder complexity. In this research, a new circuit is designed for motion estimation. The new circuit uses motion prediction based on approximate SAD, Alternative Row Scan (ARS), DAU, and FDVS algorithms. Our new method can reduce the amount of computation by 75% when compared to multi-frame motion estimation suggested in JM8.2. Furthermore, optimal number and size of reference frame blocks are determined to reduce computation without affecting the PSNR. The proposed Motion Estimation method has been verified by using the hardware and software Co-Simulation with iPROVE. It can process 30 CIF frames/sec at 50MHz.

• The Transactions of the Korea Information Processing Society
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• v.5 no.3
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• pp.862-872
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• 1998

In this paper, we developed a delay test architecture and test procedure for clocked sequential circuit. In addition, we analyze the problems of conventional and previous method on delay test for clocked sequential circuit in IEEE 1149.1. This paper discusses several problems of Delay test on IEEE 1149.1 for clocked sequential circuit. Previous method has some problems of improper capture timing, of same pattern insertion, of increase of test time. We suggest a method called ARCH-S, is based on a clock counting technique to generate continuous clocks for clocked input of CUT. A 4-bit counter is selected for the circuit under test. The simulation results ascertain the aecurate operation and effectiveness of the proposed architecture.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.3
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• pp.26-31
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• 2009

A new LFSR based test compression scheme is proposed by reducing the maximum number of specified bits in the test cube set, smax, virtually. The performance of a conventional LFSR reseeding scheme highly depends on smax. In this paper, by using different clock frequencies between an LFSR and scan chains, and grouping the scan cells, we could reduce smax virtually. H the clock frequency which is slower than the clock frequency for the scan chain by n times is used for LFSR, successive n scan cells are filled with the same data; such that the number of specified bits can be reduced with an efficient grouping of scan cells. Since the efficiency of the proposed scheme depends on the grouping mechanism, a new graph-based scan cell grouping heuristic has been proposed. The simulation results on the largest ISCAS 89 benchmark circuit show that the proposed scheme requires less memory storage with significantly smaller area overhead compared to the previous test compression schemes.

• Journal of the Korean institute of surface engineering
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• v.37 no.2
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• pp.110-118
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• 2004

The corrosion of pure titanium (CP- Ti Grade 2) and titanium alloy (Ti6Al4V ELI) were studied under various conditions of simulated body fluids. The static immersion test and the electrochemical test were performed in accordance with ISO 10271 : 2001. For the electrochemical test, the open circuit potential was monitored as a function of time, and the cyclic polarization curve was recorded. The corrosion resistance was evaluated from the values of corrosion potential, passivation current density, breakdown potential, and the shape of hysteresis etc. The effects of alloy type, surface condition, temperature, oxygen, and constituents in the fluids such as acid, chloride were estimated. Both specimens had extremely low dissolution rate in the static immersion test. They showed strong passivation characteristics in the electrochemical test. They maintained negligible current density throughout the wide anodic potential range. The passive layer was not broken up to 2.0 V (vs. SCE). The hysteresis and the shift of passivation potential toward the anodic direction was observed during the reversed scan. The passivation process appeared to be accelerated by oxygen in air or that dissolved in the fluids. The passivation also proceeded without oxygen by the reaction of constituents in the fluids. Acid or chloride in the fluids, specially later weakened the passive layer, and then induced higher passivation current density and less shift of passivation potential in the reversed scan. CP-Ti Grade 2 was more reactive than Ti6Al4V ELI in the fluids containing acid or chloride, but thicker layer produced on its surface provided higher corrosion resistance.

• Journal of KIISE:Computer Systems and Theory
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• v.30 no.2
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• pp.99-107
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• 2003

This paper proposes a design for testability (DFT) and testability analysis method for register-transfer level (RTL) circuits. The proposed method executes testability analysis - controllability and observability - on the RTL circuit and determines the insertion points to enhance the testability. Then with the associated priority based on the testability, we insert only a few of the test multiplexers resulting in minimized area overhead. Experimental results shows a higher fault coverage and a shorter test generation time than the scan method. Also, the proposed method takes a shorter test application time required.

• ETRI Journal
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• v.26 no.1
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• pp.7-13
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• 2004

To improve the characteristics of breakdown voltage and specific on-resistance, we propose a new structure for a LDMOSFET for a PDP scan driver IC based on silicon-on-insulator with a trench under the gate in the drift region. The trench reduces the electric field at the silicon surface under the gate edge in the drift region when the concentration of the drift region is high, and thereby increases the breakdown voltage and reduces the specific on-resistance. The breakdown voltage and the specific on-resistance of the fabricated device is 352 V and $18.8 m{\Omega}{\cdot}cm^2$ with a threshold voltage of 1.0 V. The breakdown voltage of the device in the on-state is over 200 V and the saturation current at $V_{gs}=5V$ and $V_{ds}$=20V is 16 mA with a gate width of $150{\mu}m$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.1
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• pp.61-71
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• 2003

Interconnect test for highly integrated environments like SoC, becomes more important as the complexity of a circuit increases. This importance is from two facts, test time and complete diagnosis. Since the interconnect test between IPs is based on the scan technology such as IEEE1149.1 and IEEE P1500, it takes long test time to apply test vectors serially through a long scan chain. Complete diagnosis is another important issue because a defect on interconnects are shown as a defect on a chip. But generally, interconnect test algorithms that need the short test time can not do complete diagnosis and algorithms that perform complete diagnosis need long test time. A new interconnect test algorithm is developed. The new algorithm can provide a complete diagnosis for all faults with shorter test length compared to the previous algorithms.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1914-1924
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• 2014

In this paper, a small-area cell array method of reducing number of SL drivers requiring large layout areas, where the SL drivers supplying programming currents are routed in the row direction in stead of the column direction for eFuse OTP memory IPs having less number of rows than that of columns such as a cell array of four rows by eight columns, and a core circuit are proposed. By adopting the proposed cell array and core circuit, the layout area of designed 32-bit eFuse OTP memory IP is reduced. Also, a V2V ($=2V{\pm}10%$) regulator necessary for RWL driver and BL pull-up load to prevent non-blown eFuse from being blown from the EM phenomenon by a big current is designed. The layout size of the designed 32-bit OTP memory IP having a cell array of four rows by eight columns is 13.4% smaller with $120.1{\mu}m{\times}127.51{\mu}m$ ($=0.01531mm^2$) than that of the conventional design with $187.065{\mu}m{\times}94.525{\mu}m$ ($=0.01768mm^2$).