• Journal of the Korean earth science society
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• v.25 no.2
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• pp.109-114
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• 2004

A wavelet method is applied to the analysis of gravity potential. One scaling function is proposed to generate wavelet. The scaling function is shown to be replaced to the Green’s function in gravity potential. The upward continuation can be expressed as a wavelet transform i.e. convolution with the scaling function. The scaling factor indicates the height variation. The multiscale edge detection is carried by connecting the local maxima of the wavelet transform at scales. The multiscale edge represents discontinuity of the geological structure. The multiscale edge method is applied to gravity data from Masan and Changwon.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.2
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• pp.72.4-72.4
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• 2019

Galaxy scaling relations, such as the Tully-Fisher relation and the fundamental plane can be used to derive redshift-independent distances. These two scaling-relations are valid for mutually exclusive morphological galaxy types, solid group catalogues are required to compare them within galaxy clusters hosting multiple galaxies. With our investigation, we aim to better understand systematic effects between the scaling rations that may cause potential biases in peculiar motion studies.

• Journal of Korean Society for Geospatial Information Science
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• v.19 no.2
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• pp.19-27
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• 2011

The objective of this study was to suggest technical approaches for preparation and down scaling of climate data used for predicting the potential forest distribution. To predict the forest distribution, we employed a Korean-specific forest distribution model, so-called the TAG(Thermal Analogy Group), and defined the PFT(Plant Functional Types) based on the HyTAG(Hydrological and Thermal Analogy Group). The climate data with 20km spatial resolution were interpolated to fit on the input data format with 1km spatial resolution. Two potential forest distribution maps were estimated using climate data constructed by kriging, one of the interpolation and down-scaling approaches, with and without lapse rate considered. Through the verification process by comparing two potential maps with the actual vegetation map, the forest distribution using the lapse rate was proven to be 38% more accurate.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2267-2272
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• 2012

This study has presented the analysis of subthreshold swings based on scaling theory for double gate MOSFET. To solve the analytical potential distribution of Poisson's equation, we use Gaussian function to charge distribution. The scaling theory has been used to analyze short channel effect such as subthreshold swing degradation. These scaling factors for gate length, oxide thickness and channel thickness has been modified with the general scaling theory to include effects of double gates. We know subthreshold swing degradation is rapidly reduced when scaling factor of gate length is half of general scaling factor, and parameters such as projected range and standard projected deviation have greatly influenced on subthreshold swings.

• Journal of The Korean Astronomical Society
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• v.36 no.spc1
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• pp.1-5
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• 2003

In an early paper Skumanich suggested the existence of a scaling law relating the mean sunspot magnetic field with the square-root of the photospheric pressure. This was derived from an analysis of a variety of theoretical spot models including those by Yun (1968). These were based on the Schliiter-Temesvary (S- T) similarity assumption. To answer criticisms that such modeling may have unphysical (non-axial maxima) solutions, the S-T model was revisited, Moon et al. (1998), with an improved vector potential function. We consider here the consequences of this work for the scaling relation. We show that by dimensionalizing the lateral force balance equation for the S- T model one finds that a single parameter enters as a characteristic value of the solution. This parameter yields Skumanich's scaling directly. Using an observed universal flux-radius relation for dark solar magnetic features (spots and pores) for comparison, we find good to fair agreement with Yun's characteristic value, however the Moon et al. values deviate significantly.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.92-97
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• 2008

In this Paper, we present a scaling theory for dual material surrounding gate (DMSGTs) MOSFETs, which gives a guidance for the device design and maintaining a precise subthreshold factor for given device parameters. By studying the subthreshold conducting phenomenon of DMSGTs, the effective conductive path effect (ECPE) is employed to acquire the natural length to guide the design. With ECPE, the minimum channel potential is used to monitor the subthreshold behavior. The effect of ECPE on scaling factor significantly improves the subthreshold swing compared to conventional scaling rule. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.9
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• pp.2015-2020
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• 2012

The subthreshold characteristics has been analyzed to investigate the effect of two gate in Double Gate MOSFET using impact factor based on scaling theory. The charge distribution of Gaussian function validated in previous researches has been used to obtain potential distribution in Poisson equation. The potential distribution was used to investigate the short channel effects such as threshold voltage roll-off, subthreshold swings and drain induced barrier lowering by varying impact factor for scaling factor. The impact factor of 0.1~1.0 for channel length and 1.0~2.0 for channel thickness are used to fit structural feature of DGMOSFET. The simulation result showed that the subthreshold swings are mostly effected by impact factor but are nearly constant for scaling factors. And threshold voltage roll-off and drain induced barrier lowering are also effected by both impact factor and scaling factor.

• Korea-Australia Rheology Journal
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• v.19 no.3
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• pp.141-146
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• 2007

We examine the wall contact of a $3\;{\mu}m$ tethered DNA chain's free end under shear with a focus on developing schemes for double-tethering in the application of making scaffolds for molecular wires. At this scale our results are found to be highly dependent on small length scale rigidity. Chain-end-wall contact frequency, mean fractional extension deficit upon contact, and standard deviation in extension upon contact are examined for scaling with dimensionless flow strength, Wi. Predictions made using a one dimensional approximation to the Smoluchowski equation for a dumbbell and three dimensional dumbbell simulations produce extension deficit, standard deviation, and frequency scaling exponents of -1/3, -1/3, and 2/3, respectively whereas more fine-grained Kratky-Porod (KP) simulations produce scaling exponents of -0.48, -0.42, and 0.76. The contact frequency scaling of 2/3 is derived from the known results regarding cyclic dynamics Analytical scaling predictions are in agreement with those previously proposed for ${\lambda}-DNA$. [Ladoux and Doyle, 2000, Doyle et al., 2000]. Our results suggest that the differences between the dumbbell and the KP model are associated with the addition of chain discretization and the correct bending potential in the latter. These scaling results will aide future exploration in double tethering of DNA to a surface.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.7
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• pp.1463-1469
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• 2012

This paper has presented the influence of scaling theory on short channel effects of double gate(DG) MOSFET in subthreshold region. In the case of conventional MOSFET, to preserve constantly output characteristics,current and switching frequency have been analyzed based on scaling theory. To analyze the results of application of scaling theory for short channel effects of DGMOSFET, the changes of threshold voltage, drain induced barrier height and subthreshold swing have been observed according to scaling factor. The analytical potential distribution of Poisson equation already verified has been used. As a result, it has been observed that threshold voltage among short channel effects is grealty changed according to scaling factor. The best scaling theory for DGMOSFET has been explained as using modified scaling theory, applying weighting factor reflected the influence of two gates when scaling theory has been applied for channel length.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.982-988
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• 2012

This paper has presented the relation of scaling theory and threshold voltage of double gate(DG) MOSFET. In the case of conventional MOSFET, current and switching frequency have been analyzed based on scaling theory. To observe the possibility of application of scaling theory for threshold voltage of DGMOSFET, the change of threshold voltage has been observed and analyzed according to scaling theory. The analytical potential distribution of Poisson equation has been used, and this model has been already verified. To solve Poisson equation, charge distribution such as Gaussian function has been used. As a result, it has been observed that threshold voltage is grealty changed according to scaling factor and change rate of threshold voltages is traced for scaling of doping concentration in channel. This paper has explained for the best modified scaling theory reflected the influence of two gates as using weighting factor when scaling theory has been applied for channel length and channel thickness.