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http://dx.doi.org/10.6109/jkiice.2012.16.7.1463

Relation of Short Channel Effect and Scaling Theory for Double Gate MOSFET in Subthreshold Region  

Jung, Hak-Kee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.16, no.7, 2012 , pp. 1463-1469 More about this Journal
Abstract
This paper has presented the influence of scaling theory on short channel effects of double gate(DG) MOSFET in subthreshold region. In the case of conventional MOSFET, to preserve constantly output characteristics,current and switching frequency have been analyzed based on scaling theory. To analyze the results of application of scaling theory for short channel effects of DGMOSFET, the changes of threshold voltage, drain induced barrier height and subthreshold swing have been observed according to scaling factor. The analytical potential distribution of Poisson equation already verified has been used. As a result, it has been observed that threshold voltage among short channel effects is grealty changed according to scaling factor. The best scaling theory for DGMOSFET has been explained as using modified scaling theory, applying weighting factor reflected the influence of two gates when scaling theory has been applied for channel length.
Keywords
DGMOSFET; scaling theory; threshold voltage; drain induced barrier lowering; subthreshold swing; short channel effect;
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Times Cited By KSCI : 1  (Citation Analysis)
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