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http://dx.doi.org/10.6109/jkiice.2012.16.9.2015

Analysis of Subthreshold Characteristics for Double Gate MOSFET using Impact Factor based on Scaling Theory  

Jung, Hak-Kee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.16, no.9, 2012 , pp. 2015-2020 More about this Journal
Abstract
The subthreshold characteristics has been analyzed to investigate the effect of two gate in Double Gate MOSFET using impact factor based on scaling theory. The charge distribution of Gaussian function validated in previous researches has been used to obtain potential distribution in Poisson equation. The potential distribution was used to investigate the short channel effects such as threshold voltage roll-off, subthreshold swings and drain induced barrier lowering by varying impact factor for scaling factor. The impact factor of 0.1~1.0 for channel length and 1.0~2.0 for channel thickness are used to fit structural feature of DGMOSFET. The simulation result showed that the subthreshold swings are mostly effected by impact factor but are nearly constant for scaling factors. And threshold voltage roll-off and drain induced barrier lowering are also effected by both impact factor and scaling factor.
Keywords
DGMOSFET; scaling; impact factor; Poisson equation; subthreshold characteristics; short channel effect;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 J.Kim, P.M.Solomon and S.Tiwri, "Adaptive Circuit Design Using Independently Biased Back-Gated Double Gate MOSFETs," IEEE Trans. on Circuits and Systems, vol.59, no.3, pp.1-14, 2012.   DOI   ScienceOn
2 H.Agnihotri, A.Ranjan, P.K.Tiwari and S.Jit, "An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs," 2011 IEEE Computer Society Annual Symposium on VLSI, pp.327-328, 2011.
3 S.Jandhyala and S.Mahapatra, "An Efficient Robust Algorithm for the Surface-Potential Calculation of Independent DG MOSFET," IEEE Trans. on Electron Devices, vol.58, no.6, pp.1663-1671, 2011.   DOI   ScienceOn
4 P.K. Tiwari, S. Kumar, S. Mittal, V. Srivastava, U. Pandey and S. Jit, "A 2D Analytical Model of the Channel Potential and Threshold Voltage of Double- Gate(DG) MOSFETs with Vertical Gaussian Doping Profile," IMPACT-2009, pp.52-55, 2009.
5 정학기, "이중게이트 MOSFET에서 채널내 도핑분포에 대한 드레인유기장벽감소의존성," 한국해양정보통신학회논문지, Vol.15, No.9, pp.2000-2006, 2011.
6 정학기, "DGMOSFET의 문턱전압과 스켈링이론의 관계", 한국정보통신학회 논문지, 게재대기.
7 H.K.Jung,"Analysis of Doping Profile Dependent Threshold Voltage for DGMOSFET Using Gaussian Function,: 한국해양정보통신학회 영문지, vol.9, no.3, pp.310-314, 2011.