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http://dx.doi.org/10.6109/jkiice.2012.16.10.2267

Analysis of Subthreshold Swings Based on Scaling Theory for Double Gate MOSFET  

Jung, Hakkee (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.16, no.10, 2012 , pp. 2267-2272 More about this Journal
Abstract
This study has presented the analysis of subthreshold swings based on scaling theory for double gate MOSFET. To solve the analytical potential distribution of Poisson's equation, we use Gaussian function to charge distribution. The scaling theory has been used to analyze short channel effect such as subthreshold swing degradation. These scaling factors for gate length, oxide thickness and channel thickness has been modified with the general scaling theory to include effects of double gates. We know subthreshold swing degradation is rapidly reduced when scaling factor of gate length is half of general scaling factor, and parameters such as projected range and standard projected deviation have greatly influenced on subthreshold swings.
Keywords
DGMOSFET; scaling theory; subthreshold swing; short channel effect;
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Times Cited By KSCI : 1  (Citation Analysis)
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