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http://dx.doi.org/10.5573/JSTS.2008.8.1.092

A New Scaling Theory for the Effective Conducting Path Effect of Dual Material Surrounding Gate Nanoscale MOSFETs  

Balamurugan, N.B. (Department of Electronics and Communication Engineering, Thiagarajar College of Engineering)
Sankaranarayanan, K. (Department of Electronics and Communication Engineering, VLB Janakiammal College of Engineering)
Suguna, M. (Department of Electronics and Communication Engineering, Thiagarajar College of Engineering)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.8, no.1, 2008 , pp. 92-97 More about this Journal
Abstract
In this Paper, we present a scaling theory for dual material surrounding gate (DMSGTs) MOSFETs, which gives a guidance for the device design and maintaining a precise subthreshold factor for given device parameters. By studying the subthreshold conducting phenomenon of DMSGTs, the effective conductive path effect (ECPE) is employed to acquire the natural length to guide the design. With ECPE, the minimum channel potential is used to monitor the subthreshold behavior. The effect of ECPE on scaling factor significantly improves the subthreshold swing compared to conventional scaling rule. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.
Keywords
Dual material surrounding gate (DMSG) MOSFETs; drain induced barrier lowering (DIBL); scaling theory; short channel effects (SCEs); two-dimensional (2-D) modeling;
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