• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.6
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• pp.1301-1308
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• 2012

In this paper, the low-power clock generator synchronized with the AC power signal using the adiabatic dynamic CMOS logic (ADCL) buffer is proposed for adiabatic logics. To reduce the power dissipation in conventional CMOS logic and to maintain adiabatic charging and discharging with low power for the ADCL, the clock signal of logic circuits should be synchronized with the AC power source. The clock signal for an adiabatic charging and discharging with the AC power signal was generated with the designed Schmitt trigger circuit and ADCL frequency divider using the ADCL buffer. From the simulation result, the power consumption of the proposed clock generator was estimated with approximately 1.181uW and 37.42uW at output 3kHz and 10MHz respectively.

• Proceedings of the IEEK Conference
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• 2002.07c
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• pp.1563-1566
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• 2002

A 16-bit adiabatic datapath for micro-power RISC processor is designed. The datapath is composed of a 3-read and 1-write multi-port adiabatic register file and an arithmetic and logic unit. A four-phase clock generator is also designed to provide supply clocks fer adiabatic circuits and the driving capability control scheme is proposed. All the clock line charge on the capacitive interconnections is recovered to recycle energy. Adiabatic circuits are designed based on efficient charge recovery logic(ECRL) and are implemented using a 0.35 fm CMOS technology. Functional and energy simulation is carried out to show the feasibility of adiabatic datapath. Simulation results show that the power consumption of the adiabatic datapath including supply clock generator is reduced by a factor of 1.4∼1.5 compared to that of the conventional CMOS.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.451-454
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• 2011

In this paper, a wideband clock generator using novel Automatic frequency calibration(AFC) scheme is proposed. Wideband clock generator using AFC has the advantage of small VCO gain and wide frequency band. The conventional AFC compares whether the feedback frequency is faster or slower then the reference frequency. However, the proposed AFC can detect frequency difference between reference frequency with feedback frequency. So it can be reduced an operation time than conventional methods AFC. Conventional AFC goes to the initial code if the frequency step changed. This AFC, on the other hand, can a prior state code so it can approach a fast operation. In simulation results, the proposed clock generator is designed for DisplayPort using the CMOS ring-VCO. The VCO tuning range is 350MHz, and a VCO frequency is 270MHz. The lock time of clock generator is less then 3us at input reference frequency, 67.5MHz. The phase noise is -109dBC/Hz at 1MHz offset from the center frequency. and power consumption is 10.1mW at 1.8V supply and layout area is $0.384mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.2 s.332
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• pp.23-30
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• 2005

This paper describes a DLL(delay locked loop)-based multi-clock generator having the lower active stand-by power as well as a fast relocking after re-activating the DLL. for low power and high speed VLSI chip. It enables a frequency multiplication using frequency multiplier scheme and produces output clocks with 50:50 duty-ratio regardless of the duty-ratio of system clock. Also, digital control scheme using DAC enables a fast relocking operation after exiting a standby-mode of the clock system which was obtained by storing analog locking information as digital codes in a register block. Also, for a clock multiplication, it has a feed-forward duty correction scheme using multiphase and phase mixing corrects a duty-error of system clock without requiring additional time. In this paper, the proposed DLL-based multi-clock generator can provides a synchronous clock to an external clock for I/O data communications and multiple clocks of slow and high speed operations for various IPs. The proposed DLL-based multi-clock generator was designed by the area of $1796{\mu}m\times654{\mu}m$ using $0.35-{\mu}m$ CMOS process and has $75MHz\~550MHz$ lock-range and maximum multiplication frequency of 800 MHz below 20psec static skew at 2.3v supply voltage.

• Journal of IKEEE
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• v.15 no.2
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• pp.129-133
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• 2011

A spread spectrum clock generation is an efficient way to reduce electro-magnetic interference (EMI) radiation in modern mixed signal chip systems. The proposed circuit generates the spread spectrum clock by directly injecting the modulation voltage into the voltage-controlled oscillator (VCO) current source for SATA II. The resulting 33KHz modulation profile has a Hersey-Kiss shape with a rounded peak. The chip has been fabricated using $0.18{\mu}m$ CMOS process and test results show that the proposed circuit achieves 0.509% (5090ppm) down spreading at 1.5GHz and peak power reduction of 10dB. The active chip area is 0.36mm ${\times}$ 0.49mm and the chip consumes 30mW power at 1.5GHz.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.46 no.1
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• pp.68-75
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• 2009

In this paper, an efficient proposed CDR(Clock and Data Recovery Circuits) using 1/4-rate clock based on dual-interpolator is proposed. The CDR is aimed to overcome problems that using multi-phase clock to decrease the clock generator frequency causes side effects such as the increased power dissipation and hardware complexity, especially when the number of channels is high. To solve these problems, each recovery part generates needed additional clocks using only inverters, but not flip-flops while maintaining the number of clocks supplied from a clock generator the same as 1/2-rate clock method. Thus, the reduction of a clock generator frequency using 1/4-rate clocking helps relax the speed limitation and power dissipation when higher data rate transfer is demanded.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.273-279
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• 2000

Electrical repair method which has replaced laser repair method can replace defective cell by redundancy’s in the redundancy scheme of conventional high density memory. This electrical repair circuit consists of the antifuse program/read/latch circuits, a clock generator a negative voltage generator a power-up pulse circuit a special address mux and etc. The measured program voltage of made antifuses was 7.2~7.5V and the resistance of programmed antifuses was below 500 Ω. The period of clock generator was about 30 ns. The output voltage of a negative voltage generator was about 4.3 V and the current capacity was maximum 825 $mutextrm{A}$. An antifuse was programmed using by the electric potential difference between supply-voltage (3.3 V) and output voltage generator. The output pulse width of a power-up pulse circuit was 30 ns ~ 1$mutextrm{s}$ with the variation of power-up time. The programmed antifuse resistance required below 44 ㏀ from the simulation of antifuse program/read/latch circuit. Therefore the electrical repair circuit behaved safely and the yield of high densitymemory will be increased by using the circuit.

• Journal of Power Electronics
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• v.15 no.4
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• pp.861-875
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• 2015

This paper presents a wide frequency range LLC resonant controller IC for LED backlight units. In this paper a new phase-domain resonance deviation prevention circuit (RDPC), which covers a wide frequency and input voltage range, is proposed. In addition, a wide range gate clock generator and an automatic dead time generator are proposed. The chip is fabricated using 0.35 μm BCD technology. The die size is 2 x 2 mm2. The frequency of the clock generator ranges from 38 kHz to 400 kHz, and the dead time ranges from 300 ns to 2 μs. The current consumption of the LLC resonant controller IC is 4 mA for a 100 kHz operation frequency using a supply voltage of 15 V.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.776-780
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• 2007

In this paper, the charge pump circuit of a VPP generator for a low voltage DRAM is newly proposed. The proposed charge pump is a 2-stage cross coupled charge pump circuit. The charge transfer efficiency is improved, and Distributed Clock Inverter is located in each charge pump stage to reduce clock period so that the pumping current is increased. In addition, the precharge circuit is located at Gate node of charge transfer transistor to solve the problem which is that the Gate node is maintained high voltage because the boosted charge can't discharge, so device reliability is decreased. The simulation result is that pumping current, pumping efficiency and power efficiency is improved. The layout of the proposed VPP generator is designed using $0.18{\mu}m$ Triple-Well process.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.277-280
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• 2001

The proposed clock generator lowers the operating frequency in a system core though it keeps data bandwidth high because it has a multiphase clocking architecture. Moreover. it has a dual loop which is comprised of an inner analog phase generation loop and outer digital phase control loop. It has both advantages of DLL's wide operating range and DLL's low jitter The proposed design has been demonstrated in terms of the concept and Hspice simulation. All circuits were designed using a 0.25${\mu}{\textrm}{m}$ CMOS process and simulated with 2.5 V power supply.