• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.385-390
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• 2023

In this paper, the 1,700 V level SiC-based power MOSFET device widely used in electric vehicles and new energy industries was designed, that is, a single trench gate power MOSFET structure and a double trench gate power MOSFET structure were proposed to analyze electrical characteristics while changing the design and process parameters. As a result of comparing and analyzing the two structures, it can be seen that the double trench gate structure shows quite excellent characteristics according to the concentration of the drift layer, and the breakdown voltage characteristics according to the depth of the drift layer also show excellent characteristics of 200 V or more. Among them, the trench gate power MOSFET device can be applied not only to the 1,700 V class but also to a voltage range above it, and it is believed that it can replace all Si devices currently applied to electric vehicles and new energy industries.

• Journal of the Institute of Convergence Signal Processing
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• v.11 no.2
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• pp.163-168
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• 2010

This paper presents the practical implementation of an over-temperature protection system for power semiconductor devices. In the proposed system, temperature variation is provided with just using $R_{ds(on)}$ characteristics of power MOSFET, while extra device such as a temperature sensor or an over-temperature detection transistor is needed to monitor the temperature in the conventional method. The proposed protection technique is experimentally tested on IRF840 power MOSFET. The PIC microcontroller PIC16F877A is used for the implementation of the proposed protection algorithm. The built-in 10-bit A/D converter is utilized for detecting voltage variance between a drain and a source of IRF840. The induced temperature-resistance relationship based on the measured drain-source voltage, supplies a gate signal to the power MOSFET. If detected temperature's voltage exceeds any a protection temperature's voltage, the microcontroller removes the trigger signal from the power MOSFET. These test results showed satisfactory performances of the proposed protection system in term of accuracy within 1.5%.

• Journal of IKEEE
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• v.27 no.1
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• pp.103-108
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• 2023

This research was carried out experiments with changing processes and design parameters to optimally design a SiC-based 1200V power MOSFET, and then, essential electrical characteristics were derived. In order to secure the excellence of the trench gate type SiC power MOSFET device to be designed, electrical characteristics were derived by designing it under conditions such as planner gate SiC power MOSFET, and it was compared with the trench gate type SiC power MOSFET device. As a result of the comparative analysis, the on-resistance while maintaining the yield voltage was 1,840mΩ, for planner gate power MOSFET and to 40mΩ for trench gate power MOSFET, respectively, indicating characteristics more than 40 times better. It was judged that excellent results were derived because the temperature resistance directly affects energy efficiency. It is predicted that the devices optimized through this experiment can sufficiently replace the IGBT devices generally used in 1200V class, and that since the SiC devices are wide band gap devices, they will be widely used to apply semiconductors for vehicles using devices with excellent thermal characteristics.

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.2
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• pp.117-125
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• 2016

In this paper, the inverter switch losses of BLDC motor for three types of PWM methods and power devices were analyzed. When the BLDC motor is driven at low currents, the inverter switch losses for MOSFET are low because MOSFET operates like resistance. However, the inverter switch losses for IGBT are higher than MOSFET due to its large turn-off losses. Moreover, synchronous rectification switching method is adaptable because MOSFET has 2-channel. So, MOSFET can be driven with more low impedance and losses. For low power inverter with MOSFET, the power losses of unified PWM are lower than that of unipolar and bipolar PWM. Proposed method and losses analysis results are verified by examination and simulation using Matlab/Simulink.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.3
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• pp.206-213
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• 2022

This paper presents setting up a laboratory-scale testbed to estimate the aging of power MOSFET devices and integrated power modules by measuring its on-state voltage and current. Based on the aging mechanisms of the component inside the power module (e.g., bond-wire, solder layer, and semiconductor chip), a system to measure the on-state resistance of device-under-test (DUT) is designed and experimented: a full-bridge circuit applies current stress to DUT, and a temperature chamber controls the ambient temperature of DUT during the aging test. The on-state resistance of SiC MOSFET measured by the proposed testbed was increased by 2.5%-3% after 44-hour of the aging test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.170-175
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• 2012

Power MOSFET is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Recently attention to the motor and the application of various technologies. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters, motor controllers. In this paper, design the 600 V Planar type, and design the trench type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.27-30
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• 2004

In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.109-114
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• 2013

Power MOSFET (metal-oxide semiconductor field-effect transistor) are widely used in power electronics applications, such as BLDC (Brushless Direct Current) motor and power module, etc. For the conventional power MOSFET device structure, there exists a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a non-uniform super-junction (SJ) trench MOSFET (TMOSFET) structure for an optimal design is proposed in this paper. It is required that the specific on-resistance of non-uniform SJ TMOSFET is less than that of uniform SJ TMOSFET under the same breakdown voltage. The idea with a linearly graded doping profile is proposed to achieve a much better electric field distribution in the drift region. The structure modelling of a unit cell, the characteristic analyses for doping density, and potential distribution are simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the non-uniform SJ TMOSFET shows the better performance than the uniform SJ TMOSFET in the specific on-resistance at the class of 100V.

• Proceedings of the KIPE Conference
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• 2013.11a
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• pp.89-90
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• 2013

Higher power density, higher operational temperature, lower on state resistance and higher switching frequency capabilities of Silicon Carbide (SiC) technology devices compared to Silicon (Si) devices makes it has higher promising market. One of the most developed SiC devices is the power MOSFET. This study tests the SiC MOSFET under short circuit conditions taking into account the effect of gate voltage characteristics. The results will be compared to IGBT and MOSFET Si devices with similar ratings. A tester circuit was designed to perform the short circuit operation.

• Journal of Satellite, Information and Communications
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• v.8 no.3
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• pp.10-14
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• 2013

In this paper, when applying current-mode circuit design technique showing constant power dissipation none the less operation frequency, to the low power design of dynamic voltage frequency scaling, we introduce the low power current-mode circuit design technique applying MOSFET in sub-threshold region, in order to solve the problem that has large power dissipation especially on the condition of low operating frequency. BSIM 3, was used as a MOSFET model in circuit simulation. From the simulation result, the power dissipation of the current memory circuit with sub-threshold MOSFET showed $18.98{\mu}W$, which means the consumption reduction effect of 98%, compared with $900{\mu}W$ in that with strong inversion. It is confirmed that the proposed circuit design technique will be available in DVFS using a current-mode circuit design.