전력전자학회논문지 (The Transactions of the Korean Institute of Power Electronics)

  • 제27권3호
  • /
  • Pages.206-213
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  • 2022
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  • 1229-2214(pISSN)
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  • 2288-6281(eISSN)
전력전자학회 (The Korean Institute of Power Electronics)
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전력용 MOSFET의 온-상태 저항 측정 및 노화 시험 환경 구축

Testbed of Power MOSFET Aging Including the Measurement of On-State Resistance

  • Shin, Joonho (Department of Smart Cities, Chung-Ang University) ;
  • Shin, Jong-Won (School of Energy Systems Engineering, Chung-Ang University)
  • 투고 : 2021.11.07
  • 심사 : 2022.01.07
  • 발행 : 2022.06.20
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초록

This paper presents setting up a laboratory-scale testbed to estimate the aging of power MOSFET devices and integrated power modules by measuring its on-state voltage and current. Based on the aging mechanisms of the component inside the power module (e.g., bond-wire, solder layer, and semiconductor chip), a system to measure the on-state resistance of device-under-test (DUT) is designed and experimented: a full-bridge circuit applies current stress to DUT, and a temperature chamber controls the ambient temperature of DUT during the aging test. The on-state resistance of SiC MOSFET measured by the proposed testbed was increased by 2.5%-3% after 44-hour of the aging test.

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과제정보

본 연구는 한국에너지기술연구원의 기본사업(C1-2420)을 재원으로 수행한 연구개발과제의 결과입니다.

참고문헌

  1. U. Choi, S. Jorgensen, and F. Blaabjerg, "Advanced accelerated power cycling test for reliability investigation of power device modules," IEEE Transactions on Power Electronics, Vol. 31, No. 12, pp. 8371-8386, Dec. 2016. https://doi.org/10.1109/TPEL.2016.2521899
  2. U. Choi, F. Blaabjerg, and S. Jorgensen, "Study on effect of junction temperature swing duration on lifetime of transfer molded power IGBT modules," IEEE Transactions on Power Electronics, Vol. 32, No. 8, pp. 6434-6443, Aug. 2017. https://doi.org/10.1109/TPEL.2016.2618917
  3. M. Heydarzadeh, S. Dusmez, M. Nourani, and B. Akin, "Bayesian remaining useful lifetime prediction of thermally aged power MOSFETs," in 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 2718-2722, 2017.
  4. A. Hanif, D. DeVoto, and F. Khan, "Bond wire damage detection and SOH estimation of a dual-pack IGBT power module using active power cycling and reflectometry," IEEE Transactions on Power Electronics, Vol. 35, No. 7, pp. 6761-6772, Jul. 2020. https://doi.org/10.1109/tpel.2019.2958898
  5. C. Chu, C. Dong, J. Hu, M. Du, and Z. Ouyang, "Aging monitoring method of bond wires based on phase-frequency characteristics of differential mode conducted interference signal for IGBT module," IEEE Transactions on Device and Materials Reliability, Nov. 2021.
  6. W. Lai, M. Chen, L. Ran, O. Alatise, S. Xu, and P. Mawby, "Low ΔTj stress cycle effect in IGBT power module die-attach lifetime modeling," IEEE Transactions on Power Electronics, Vol. 31, No. 9, pp. 6575-6585, Sep. 2016. https://doi.org/10.1109/TPEL.2015.2501540
  7. R. H. Baker, "Maximum efficiency switching circuits," MIT Lincoln Lab Report TR-110, 1956.
  8. G. Stahl, M. Rodriguez, and D. Maksimovic, "A high-efficiency bidirectional buck-boost DC-DC converter," in 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 1362-1367, 2012.
  9. L. Huber, B. T. Irving, and M. M. Jovanovic, "Effect of valley switching and switching-frequency limitation on line-current distortions of DCM/CCM boundary boost PFC converters," IEEE Transactions on Power Electronics, Vol. 24, No. 2, pp. 339-347, Feb. 2009. https://doi.org/10.1109/TPEL.2008.2006053
  10. R. Erickson and D. Maksimovic, Fundamentals of power electronics, 3rd Ed., Springer, p. 1039, 2020.
  11. Jeiotech, "Heating and cooling chamber LCH-11G," [Online]. available: https://www.jeiotech.com/item.php?it_id=1361326243.