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Development and Implementation of an Over-Temperature Protection System for Power Semiconductor Devices  

Choi, Nak-Gwon (LG이노텍 Power연구실)
Lee, Sang-Hoon (경남대학교 전자공학과)
Publication Information
Journal of the Institute of Convergence Signal Processing / v.11, no.2, 2010 , pp. 163-168 More about this Journal
Abstract
This paper presents the practical implementation of an over-temperature protection system for power semiconductor devices. In the proposed system, temperature variation is provided with just using $R_{ds(on)}$ characteristics of power MOSFET, while extra device such as a temperature sensor or an over-temperature detection transistor is needed to monitor the temperature in the conventional method. The proposed protection technique is experimentally tested on IRF840 power MOSFET. The PIC microcontroller PIC16F877A is used for the implementation of the proposed protection algorithm. The built-in 10-bit A/D converter is utilized for detecting voltage variance between a drain and a source of IRF840. The induced temperature-resistance relationship based on the measured drain-source voltage, supplies a gate signal to the power MOSFET. If detected temperature's voltage exceeds any a protection temperature's voltage, the microcontroller removes the trigger signal from the power MOSFET. These test results showed satisfactory performances of the proposed protection system in term of accuracy within 1.5%.
Keywords
IPM; Over-temperature protection; $R_{ds(on)}$; power MOSFET;
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  • Reference
1 G. Majumadr, K.H. Hessein: E. Thal, G. Debled, T. Octa, and F. Tametani, "Evolution of Application Specific IPM," EPE'97, PP. 1210-1215, 1997
2 M. Fukada, and H. Maekawa, "Advanced in Integrated Intelligent Power Modules for Hybrid Electrical Vehicles," Mitsubishi electric Advance magazine, Mitsubishi electric, Vol. 97, pp. 14-17, Mar. 2002.
3 PIC877A data sheet, Microchip
4 T. Kajiwara, A. Yamaguehi, Y. Hoshi, and K. Sakurai, "New Intelligent Power Multi-Chips Modules with Junction Temperature Detecting Function," ISPSD'98, pp. 281-284, 1998.
5 김은수, 김은동, IGBT/IPM 기술동향 및 전망, 전력전자학회지, 제5권, 제6호, pp.15-19, 2000.
6 최낙원, 이상훈, 김형우, 김기현, 서길수, 김남균 "MOSFET Rds(on) 특성을 이용한 과열보호회로 모델링," 대한전기학회 하계학술대회논문집, pp. 3019-3021, 2005. 7.
7 IRF840 data sheet, International Rectifier
8 G. Majurndar, and T. Minato, "Recent and Future IGBT Evoution," PCC'07, pp. 355-359, 2007.
9 G. Majumdar, M. Fukunaga, and T. Ise, "Trends of Intelligent Power Module," IEEJ Trans. on Electrical and Electronic Engineering, Vol. 2, Issue 2, pp. xiii-xiv, Feb. 2007.   DOI   ScienceOn
10 M. Iwasaki, and T. Iwagami, "Transfer Mold-Type IPMs for Driving Small-Power Motors," Mitttbishi electric Advance magazine, Mitsubishi electric, Vol. 97, pp.11-13, Mar. 2002.