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http://dx.doi.org/10.6113/TKPE.2022.27.3.206

Testbed of Power MOSFET Aging Including the Measurement of On-State Resistance  

Shin, Joonho (Department of Smart Cities, Chung-Ang University)
Shin, Jong-Won (School of Energy Systems Engineering, Chung-Ang University)
Publication Information
The Transactions of the Korean Institute of Power Electronics / v.27, no.3, 2022 , pp. 206-213 More about this Journal
Abstract
This paper presents setting up a laboratory-scale testbed to estimate the aging of power MOSFET devices and integrated power modules by measuring its on-state voltage and current. Based on the aging mechanisms of the component inside the power module (e.g., bond-wire, solder layer, and semiconductor chip), a system to measure the on-state resistance of device-under-test (DUT) is designed and experimented: a full-bridge circuit applies current stress to DUT, and a temperature chamber controls the ambient temperature of DUT during the aging test. The on-state resistance of SiC MOSFET measured by the proposed testbed was increased by 2.5%-3% after 44-hour of the aging test.
Keywords
Power MOSFET; Integrated power module; Accelerated aging test; On-state resistance;
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Times Cited By KSCI : 1  (Citation Analysis)
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