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http://dx.doi.org/10.4313/JKEM.2004.17.1.027

A Lateral Trench Electrode Power MOSFET with Superior Electrical Characteristics for Smart Power IC Systems  

성만영 (고려대학교 전기공학과)
김대종 (고려대학교 전기공학과)
강이구 (극동대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.1, 2004 , pp. 27-30 More about this Journal
Abstract
In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.
Keywords
Lateral Trench Eletrode Power MOSFET(LTEMOSFET); Trench electrode; Forward blocking voltage; Breakdown voltage; Trade-off; Voltage drop;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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