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http://dx.doi.org/10.4313/JKEM.2012.25.3.170

A Study on High-voltage Low-power Power MOSFET of Optimization for Industrial Motor Drive  

Kim, Bum-June (Department of Materials Engineering, Far East University)
Chung, Hun-Suk (Department of Materials Engineering, Far East University)
Kim, Seong-Jong (Department of Materials Engineering, Far East University)
Jung, Eun-Sik (Department of Electrical Engineering, Korea University)
Kang, Ey-Goo (Department of Materials Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.3, 2012 , pp. 170-175 More about this Journal
Abstract
Power MOSFET is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Recently attention to the motor and the application of various technologies. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters, motor controllers. In this paper, design the 600 V Planar type, and design the trench type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.
Keywords
Power MOSFET; Planar; Trench; $V_{th}$; BV; $R_{on}$; JFET dose; Pbase dose;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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