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http://dx.doi.org/10.5573/ieek.2013.50.7.109

A Study on Optimal Design of 100 V Class Super-junction Trench MOSFET  

Lho, Young Hwan (School of Railroad Electricity and Information Communication, Woosong University)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.50, no.7, 2013 , pp. 109-114 More about this Journal
Abstract
Power MOSFET (metal-oxide semiconductor field-effect transistor) are widely used in power electronics applications, such as BLDC (Brushless Direct Current) motor and power module, etc. For the conventional power MOSFET device structure, there exists a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a non-uniform super-junction (SJ) trench MOSFET (TMOSFET) structure for an optimal design is proposed in this paper. It is required that the specific on-resistance of non-uniform SJ TMOSFET is less than that of uniform SJ TMOSFET under the same breakdown voltage. The idea with a linearly graded doping profile is proposed to achieve a much better electric field distribution in the drift region. The structure modelling of a unit cell, the characteristic analyses for doping density, and potential distribution are simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the non-uniform SJ TMOSFET shows the better performance than the uniform SJ TMOSFET in the specific on-resistance at the class of 100V.
Keywords
MOSFET; Super-junction Trench MOSFET; on-resistance; breakdown voltage;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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