• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2002년도 춘계학술대회 논문집
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• pp.66-69
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• 2002

In the ideal forming theory(1), which has been deviously developed as a direct method for optimizing forming process, material elements are required to deform following the minimum plastic work path (or the proportional true strain path). Besides the general theory(2,3), specific ideal forming theories have been developed for membrane sheet forming(4) as well as two-dimensional steady bulk forming(5-7). In this work, the ideal forming theory was successfully applied for non-steady bulk forming under the plane strain condition. Here, the shape change complying with the minimum plastic work path, was effectively described by developing a numerical code based on the characteristic method. Numerical results obtained for a specific industrial part also include the optimum pre-forming shape and its evolving shape change to the final shape as well as the boundary traction history.

• 호남수학학술지
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• 제26권3호
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• pp.247-256
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• 2004

Buchmann and Williams[1] proposed a key exchange system making use of the properties of the maximal order of an imaginary quadratic field. $H{\ddot{u}}hnlein$ et al. [6,7] also introduced a cryptosystem with trapdoor decryption in the class group of the non-maximal imaginary quadratic order with prime conductor q. Their common techniques are based on the properties of the invertible ideals of the maximal or non-maximal orders respectively. Kim and Moon [8], however, proposed a key-exchange system and a public-key encryption scheme, based on the class semigroups of imaginary quadratic non-maximal orders. In Kim and Moon[8]'s cryptosystem, a non-invertible ideal is chosen as a generator of key-exchange ststem and their secret key is some characteristic value of the ideal on the basis of Zanardo et al.[9]'s quantity for ideal equivalence. In this paper we propose the methods for finding the non-invertible ideals corresponding to non-primitive quadratic forms and clarify the structure of the class semigroup of non-maximal order as finitely disjoint union of groups with some quantities correctly. And then we correct the misconceptions of Zanardo et al.[9] and analyze Kim and Moon[8]'s cryptosystem.

• Fibers and Polymers
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• 제3권3호
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• pp.120-127
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• 2002

Ever since the ideal forming theory has been developed for process design purposes, application has been limited to sheet forming and, for bulk forming, to two-dimensional steady flow. Here, application for the non-steady case was made under the plane-strain condition. In the ideal flow, material elements deform fellowing the minimum plastic work path (or mostly proportional true strain path) so that the ideal plane-strain flow can be effectively described using the two-dimensional orthogonal convective coordinate system. Besides kinematics, schemes to optimize preform shapes for a prescribed final part shape and also to define the evolution of shapes and frictionless boundary tractions were developed. Discussions include numerical calculations made for a real automotive part under forging.

• 한국통신학회논문지
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• 제39A권1호
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• pp.12-18
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• 2014

In this paper, a new peak-to-average power ratio (PAPR) reduction method for spatial modulation(SM) is presented. By using the matrix with all non-zero elements to precode the signals before transmitting, the transmit power is scattered over all transmit antennas for achieving the goal of PAPR reduction. If this matrix is also an unitary matrix, the distribution of transmit power over transmit antennas will be uniform and it also could retain the characteristic of avoiding inter channel interference (ICI) due to the orthogonality of unitary matrix. In case of a non-ideal amplifier, the proposed method can produce a considerable improvement that increases with a number of transmit antennas in performance. Furthermore, the new scheme achieves an identical performance with conventional one in the case of ideal amplifier.

• East Asian mathematical journal
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• 제17권2호
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• pp.225-232
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• 2001

Let R be a prime ring with characteristic not two. U a (${\sigma},{\tau}$)-left Lie ideal of R and d : R$\rightarrow$R a non-zero derivation. The purpose of this paper is to invesitigate identities satisfied on prime rings. We prove the following results: (1) [d(R),a]=0$\Leftrightarrow$d([R,a])=0. (2) if $(R,a)_{{\sigma},{\tau}}$=0 then $a{\in}Z$. (3) if $(R,a)_{{\sigma},{\tau}}{\subset}C_{{\sigma},{\tau}}$ then $a{\in}Z$. (4) if $(U,a){\subset}Z$ then $a^2{\in}Z\;or\;{\sigma}(u)+{\tau}(u){\in}Z$, for all $u{\in}U$. (5) if $(U,R)_{{\sigma},{\tau}}{\subset}C_{{\sigma},{\tau}}$ then $U{\subset}Z$.

• Journal of Power Electronics
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• 제17권5호
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• pp.1268-1277
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• 2017

Three-phase pulse width modulation (PWM) rectifiers are usually designed under the assumption of ideal ac power supply and input inductance. However, non-ideal circuit parameters may lead to a voltage collapse of PWM rectifiers. This paper investigates the mechanism of voltage collapse in three-phase PWM rectifiers. An analytical stability boundary expression is derived by analyzing the equilibrium point of the averaging state space model, which can not only accurately locate the voltage collapse boundary in the circuit parameter domain, but also reveal the essential characteristic of the voltage collapse. Results are obtained and compared with those of the trial-error method and the Jacobian method. Based on the analysis results, the system parameters can be divided into two categories. One of these categories affects the critical point, and other affects only the instability process. Furthermore, an effective control strategy is proposed to prevent a vulnerable system from being driven into the instability region. The analysis results are verified by the experiments.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권1호
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• pp.59-65
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• 2012

A study on the electrical characteristic analysis of solar cell diodes under experimental conditions of varying temperature and frequency has been conducted. From the current-voltage (I-V) measurements, at the room temperature, we obtained the ideality factor (n) for Space Charge Region (SCR) and Quasi-Neutral Region (QNR) of 3.02 and 1.76, respectively. Characteristics showed that the value of n (at SCR) decreases with rising temperature and n (at QNR) increases with the same conditions. These are due to not only the sharply increased SCR current flow but the activated carrier recombination in the bulk region caused by defects such as contamination, dangling bonds. In addition, from the I-V measurements implemented to confirm the junction uniformity of cells, the average current dispersion was 40.87% and 10.59% at the region of SCR and QNR, respectively. These phenomena were caused by the pyramidal textured junction structure formed to improve the light absorption on the device's front surface, and these affect to the total diode current flow. These defect and textured junction structure will be causes that solar cell diodes have non-ideal electrical characteristics compared with general p-n junction diodes. Also, through the capacitance-voltage (C-V) measurements under the frequency of 180 kHz, we confirmed that the value of built-in potential is 0.63 V.

• 대한수학회보
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• 제42권4호
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• pp.679-690
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• 2005

Let K be a commutative ring with unity, R a prime K-algebra of characteristic different from 2, d a non-zero derivation of R, I a non-zero right ideal of R, f($x_1,{\cdots},\;x_n$) a multilinear polynomial in n non-commuting variables over K, a $\in$ R. Supppose that, for any $x_1,{\cdots},\;x_n\;\in\;I,\;a[d(f(x_1,{\cdots},\;x_n)),\;f(x_1,{\cdots},\;x_n)]$ = 0. If $[f(x_1,{\cdots},\;x_n),\;x_{n+1}]x_{n+2}$ is not an identity for I and $$S_4(I,\;I,\;I,\;I)\;I\;\neq\;0$$, then aI = ad(I) = 0.

• 대한수학회보
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• 제29권1호
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• pp.65-72
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• 1992

All rings are commutative, Noetherian with identity and of prime characteristic p, unless otherwise specified. First, we describe the definition of tight closure of an ideal and the properties about the tight closure used frequently. The technique used here for the tight closure was introduced by M. Hochster and C. Huneke [4,5, or 6]. Using the concepts of the tight closure and its properties, we will prove that if R is a complete local domain and F-rational, then R is Cohen-Macaulay. Next, we study the properties of R$^{+}$, the integral closure of a domain in an algebraic closure of its field of fractions. In fact, if R is a complete local domain of characteristic p>0, then R$^{+}$ is Cohen-Macaulay [8]. But we do not know this fact is true or not if the characteristic of R is zero. For the special case we can show that if R is a non-Cohen-Macaulay normal domain containing the rationals Q, then R$^{+}$ is not Cohen-Macaulay. Finally we will prove that if R is an excellent local domain of characteristic p and F-ratiional, then R is Cohen-Macaulay.aulay.

• 전자공학회논문지
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• 제54권6호
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• pp.30-39
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• 2017

본 논문은 디지털영역에서의 평균화 기법을 이용한 cyclic ADC의 디지털 보정기법을 제안한다. 제안하는 보정기법은 1.5비트 MDAC의 커패시터 부정합으로 인해 발생하는 ADC의 비선형성을 보정한다. 부정합을 지니는 커패시터로 이루어진 1.5비트 MDAC은 이상적인 1.5비트 MDAC의 레지듀 플롯(residue plot)에 대해 대칭적인 레지듀 플롯을 지닌다. 커패시터 부정합을 지니는 1.5비트 MDAC의 고유한 레지듀 플롯은 대칭적인 아날로그-디지털 전달함수로 반영된다. 이상적인 아날로그-디지털 전달함수에 대해 대칭적인 두 아날로그-디지털 전달함수를 평균화함으로써, 비선형성이 보정된 아날로그-디지털 전달함수를 얻을 수 있다. 해당 아날로그-디지털 전달함수 평균화의 구현을 위해, 본 논문의 12비트 cyclic ADC는 1.5비트 MDAC의 동작 모드를 2개로 정의한다. 해당 cyclic ADC는 MDAC을 첫 번째 동작모드로 동작시킴으로써, 비선형성을 지니는 12.5비트 출력 코드를 획득한다. 샘플링 된 동일한 입력 아날로그 전압에 대해, MDAC을 두 번째 동작모드로 동작시킴으로써, cyclic ADC는 비선형성을 지니는 또 다른 12.5비트 출력 코드를 획득한다. 각 MDAC의 동작모드에 의해 발생하는 아날로그-디지털 전달함수는 이상적인 아날로그-디지털 전달함수에 대해 대칭적이기 때문에, 앞서 획득한 두 개의 비선형성을 지니는 12.5비트를 평균화함으로써, 비선형성이 보정된 최종 12비트 출력 코드를 획득할 수 있다. 제안하는 디지털 보정기법과 12비트 cyclic ADC는 $0.18-{\mu}m$ CMOS 공정을 이용하여 full-custom 형식으로 구현되었다. 측정된 SNDR(ENOB)와 SFDR은 각각 65.3dB(10.6비트 ENOB)와 71.7dB이다. 측정된 INL과 DNL은 각각 -0.30/+0.33LSB와 -0.63/+0.56LSB이다.