Browse > Article
http://dx.doi.org/10.5573/JSTS.2012.12.1.59

A Study on the Electrical Characteristic Analysis of c-Si Solar Cell Diodes  

Choi, Pyung-Ho (School of Information and Communication Engineering, Sungkyunkwan University)
Kim, Hyo-Jung (School of Information and Communication Engineering, Sungkyunkwan University)
Baek, Do-Hyun (School of Information and Communication Engineering, Sungkyunkwan University)
Choi, Byoung-Deog (School of Information and Communication Engineering, Sungkyunkwan University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.12, no.1, 2012 , pp. 59-65 More about this Journal
Abstract
A study on the electrical characteristic analysis of solar cell diodes under experimental conditions of varying temperature and frequency has been conducted. From the current-voltage (I-V) measurements, at the room temperature, we obtained the ideality factor (n) for Space Charge Region (SCR) and Quasi-Neutral Region (QNR) of 3.02 and 1.76, respectively. Characteristics showed that the value of n (at SCR) decreases with rising temperature and n (at QNR) increases with the same conditions. These are due to not only the sharply increased SCR current flow but the activated carrier recombination in the bulk region caused by defects such as contamination, dangling bonds. In addition, from the I-V measurements implemented to confirm the junction uniformity of cells, the average current dispersion was 40.87% and 10.59% at the region of SCR and QNR, respectively. These phenomena were caused by the pyramidal textured junction structure formed to improve the light absorption on the device's front surface, and these affect to the total diode current flow. These defect and textured junction structure will be causes that solar cell diodes have non-ideal electrical characteristics compared with general p-n junction diodes. Also, through the capacitance-voltage (C-V) measurements under the frequency of 180 kHz, we confirmed that the value of built-in potential is 0.63 V.
Keywords
Solar cell diodes; junction uniformity; non-ideal characteristic; I-V; C-V;
Citations & Related Records
연도 인용수 순위
  • Reference
1 P. Campbell, M. A. Green, "High performance light trapping textures for mono-crystalline silicon solar cells," Solar Energy Materials & Solar Cells, Vol.65, pp.369-375, 2001.   DOI   ScienceOn
2 S. R. Dhariwal, S. Mittal, R. K. Mathur, "THEORY FOR VOLTAGE DEPENDENT SERIES RESISTANCE IN SILICON SOLAR CELLS," Solid-State Electronics, Vol.27, pp.267-273, 1984.   DOI   ScienceOn
3 S. Demirezen, Z. Sonmez, U. Aydemir, S. Altındal, "Effect of series resistance and interface states on the I-V, C-V and $G/{\omega}-V$ characteristics in Au/Bidoped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature," Current Applied Physics, pp.1-7, 2011.
4 FEBRUARYals & Solar Cells 91 1) 1Y. Chen, X. Wang, D. Li, R. Hong, H. Shen, "Parameters extraction from commer cial solar cells I-V characteristics and shunt analysis," Applied Energy, Vol.88, pp.2239-2244, 2011.   DOI   ScienceOn
5 K. Bouzidi, M. Chegaar, A. Bouhemadou, "Solar cells parameters evaluation considering the series and shunt resistance," Solar Energy Materials & Solar Cells, Vol.91, pp.1647-1651, 2007.   DOI   ScienceOn
6 N. Kavasoglu, A. Sertap Kavasoglu, S. Oktik, "A new method of diode ideality factor extraction from dark I-V curve," Current Applied Physics, Vol.9, pp.833-838, 2009.   DOI   ScienceOn
7 A. Ortiz-Conde, Francisco J. Garcıa Sanchez, J. Muci, "New method to extract the model parameters of solar cells from the explicit analytic solutions of their illuminated I-V characteristics," Solar Energy Materials & Solar Cells, Vol.90, pp.352-361, 2006.   DOI   ScienceOn
8 N. S. Singh, A. Jain, A. Kapoor, "Determination of the solar cell junction ideality factor using special trans function theory (STFT)," Solar Energy Materials & Solar Cells, Vol.93, pp.1423-1426, 2009.   DOI   ScienceOn
9 Daniel S. H. Chan, Jacob C. H. Phang, "Analytical Methods for the Extraction of Solar-Cell Singleand Double-Diode Model Parameters from I-V Characteristics," IEEE Transactions on Electron Devices, Vol.34, 1987.
10 P. Singh, S. N. Singh, M. Lal, M. Husain, "Temperature dependence of I-V characteristics and performance parameters of silicon solar cell," Solar Energy Materials & Solar Cells, Vol.92, pp.1611-1616, 2008.   DOI   ScienceOn
11 O. Breitenstein, J. Bauer, A. Lotnyk, J. M. Wagner, "Defect induced non-ideal dark I-V characteristics of solar cells," Superlattices and Microstructures, Vol.45, pp.182-189, 2009.   DOI   ScienceOn
12 S. J. Byun, S. Y. Byun, J. K. Lee, J. W. Kim, T. S. Lee, K. M. Cho, D. W. Sheen, S. J. Tark, D. H. Kim, W. M. Kim, "Analysis of light trapping effects in Si solar cells with a textured surface by ray tracing simulation," Current Applied Physics, pp.1-3, 2011.
13 J.M. Rodrfguez, I. Tobias, A. Luque, "Random pyramidal texture modeling," Solar Energy Materials and Solar Cells, Vol.45, pp.241-253, 1997.   DOI   ScienceOn