• Title/Summary/Keyword: non-ideal characteristic

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Non-steady Ideal Forming in Plane Strain (평면 변형 하에서의 비정상 이상 공정 이론)

  • ;;Owen Richmond
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2002.05a
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    • pp.66-69
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    • 2002
  • In the ideal forming theory(1), which has been deviously developed as a direct method for optimizing forming process, material elements are required to deform following the minimum plastic work path (or the proportional true strain path). Besides the general theory(2,3), specific ideal forming theories have been developed for membrane sheet forming(4) as well as two-dimensional steady bulk forming(5-7). In this work, the ideal forming theory was successfully applied for non-steady bulk forming under the plane strain condition. Here, the shape change complying with the minimum plastic work path, was effectively described by developing a numerical code based on the characteristic method. Numerical results obtained for a specific industrial part also include the optimum pre-forming shape and its evolving shape change to the final shape as well as the boundary traction history.

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ON THE STRUCTURES OF CLASS SEMIGROUPS OF QUADRATIC NON-MAXIMAL ORDERS

  • KIM, YONG TAE
    • Honam Mathematical Journal
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    • v.26 no.3
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    • pp.247-256
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    • 2004
  • Buchmann and Williams[1] proposed a key exchange system making use of the properties of the maximal order of an imaginary quadratic field. $H{\ddot{u}}hnlein$ et al. [6,7] also introduced a cryptosystem with trapdoor decryption in the class group of the non-maximal imaginary quadratic order with prime conductor q. Their common techniques are based on the properties of the invertible ideals of the maximal or non-maximal orders respectively. Kim and Moon [8], however, proposed a key-exchange system and a public-key encryption scheme, based on the class semigroups of imaginary quadratic non-maximal orders. In Kim and Moon[8]'s cryptosystem, a non-invertible ideal is chosen as a generator of key-exchange ststem and their secret key is some characteristic value of the ideal on the basis of Zanardo et al.[9]'s quantity for ideal equivalence. In this paper we propose the methods for finding the non-invertible ideals corresponding to non-primitive quadratic forms and clarify the structure of the class semigroup of non-maximal order as finitely disjoint union of groups with some quantities correctly. And then we correct the misconceptions of Zanardo et al.[9] and analyze Kim and Moon[8]'s cryptosystem.

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Nonsteady Plane-strain Ideal Forming without Elastic Dead-zone

  • Chung, Kwansoo;Lee, Wonoh;Kang, Tae Jin;Youn, Jae Ryoun
    • Fibers and Polymers
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    • v.3 no.3
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    • pp.120-127
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    • 2002
  • Ever since the ideal forming theory has been developed for process design purposes, application has been limited to sheet forming and, for bulk forming, to two-dimensional steady flow. Here, application for the non-steady case was made under the plane-strain condition. In the ideal flow, material elements deform fellowing the minimum plastic work path (or mostly proportional true strain path) so that the ideal plane-strain flow can be effectively described using the two-dimensional orthogonal convective coordinate system. Besides kinematics, schemes to optimize preform shapes for a prescribed final part shape and also to define the evolution of shapes and frictionless boundary tractions were developed. Discussions include numerical calculations made for a real automotive part under forging.

New PAPR Reduction Method for Spatial Modulation (공간변조 기법을 위한 새로운 PAPR 감쇄 방법)

  • Shang, Yulong;Kim, Hojun;Kim, Hongjoong;Jung, Taejin
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.39A no.1
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    • pp.12-18
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    • 2014
  • In this paper, a new peak-to-average power ratio (PAPR) reduction method for spatial modulation(SM) is presented. By using the matrix with all non-zero elements to precode the signals before transmitting, the transmit power is scattered over all transmit antennas for achieving the goal of PAPR reduction. If this matrix is also an unitary matrix, the distribution of transmit power over transmit antennas will be uniform and it also could retain the characteristic of avoiding inter channel interference (ICI) due to the orthogonality of unitary matrix. In case of a non-ideal amplifier, the proposed method can produce a considerable improvement that increases with a number of transmit antennas in performance. Furthermore, the new scheme achieves an identical performance with conventional one in the case of ideal amplifier.

SOME RESULTS ON GENERALIZED LIE IDEALS WITH DERIVATION

  • Aydin, Neset;Kaya, Kazim;Golbasi, Oznur
    • East Asian mathematical journal
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    • v.17 no.2
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    • pp.225-232
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    • 2001
  • Let R be a prime ring with characteristic not two. U a (${\sigma},{\tau}$)-left Lie ideal of R and d : R$\rightarrow$R a non-zero derivation. The purpose of this paper is to invesitigate identities satisfied on prime rings. We prove the following results: (1) [d(R),a]=0$\Leftrightarrow$d([R,a])=0. (2) if $(R,a)_{{\sigma},{\tau}}$=0 then $a{\in}Z$. (3) if $(R,a)_{{\sigma},{\tau}}{\subset}C_{{\sigma},{\tau}}$ then $a{\in}Z$. (4) if $(U,a){\subset}Z$ then $a^2{\in}Z\;or\;{\sigma}(u)+{\tau}(u){\in}Z$, for all $u{\in}U$. (5) if $(U,R)_{{\sigma},{\tau}}{\subset}C_{{\sigma},{\tau}}$ then $U{\subset}Z$.

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Investigation of the Voltage Collapse Mechanism in Three-Phase PWM Rectifiers

  • Ren, Chunguang;Li, Huipeng;Yang, Yu;Han, Xiaoqing;Wang, Peng
    • Journal of Power Electronics
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    • v.17 no.5
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    • pp.1268-1277
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    • 2017
  • Three-phase pulse width modulation (PWM) rectifiers are usually designed under the assumption of ideal ac power supply and input inductance. However, non-ideal circuit parameters may lead to a voltage collapse of PWM rectifiers. This paper investigates the mechanism of voltage collapse in three-phase PWM rectifiers. An analytical stability boundary expression is derived by analyzing the equilibrium point of the averaging state space model, which can not only accurately locate the voltage collapse boundary in the circuit parameter domain, but also reveal the essential characteristic of the voltage collapse. Results are obtained and compared with those of the trial-error method and the Jacobian method. Based on the analysis results, the system parameters can be divided into two categories. One of these categories affects the critical point, and other affects only the instability process. Furthermore, an effective control strategy is proposed to prevent a vulnerable system from being driven into the instability region. The analysis results are verified by the experiments.

A Study on the Electrical Characteristic Analysis of c-Si Solar Cell Diodes

  • Choi, Pyung-Ho;Kim, Hyo-Jung;Baek, Do-Hyun;Choi, Byoung-Deog
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.1
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    • pp.59-65
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    • 2012
  • A study on the electrical characteristic analysis of solar cell diodes under experimental conditions of varying temperature and frequency has been conducted. From the current-voltage (I-V) measurements, at the room temperature, we obtained the ideality factor (n) for Space Charge Region (SCR) and Quasi-Neutral Region (QNR) of 3.02 and 1.76, respectively. Characteristics showed that the value of n (at SCR) decreases with rising temperature and n (at QNR) increases with the same conditions. These are due to not only the sharply increased SCR current flow but the activated carrier recombination in the bulk region caused by defects such as contamination, dangling bonds. In addition, from the I-V measurements implemented to confirm the junction uniformity of cells, the average current dispersion was 40.87% and 10.59% at the region of SCR and QNR, respectively. These phenomena were caused by the pyramidal textured junction structure formed to improve the light absorption on the device's front surface, and these affect to the total diode current flow. These defect and textured junction structure will be causes that solar cell diodes have non-ideal electrical characteristics compared with general p-n junction diodes. Also, through the capacitance-voltage (C-V) measurements under the frequency of 180 kHz, we confirmed that the value of built-in potential is 0.63 V.

A ONE-SIDED VERSION OF POSNER'S SECOND THEOREM ON MULTILINEAR POLYNOMIALS

  • FILIPPIS VINCENZO DE
    • Bulletin of the Korean Mathematical Society
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    • v.42 no.4
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    • pp.679-690
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    • 2005
  • Let K be a commutative ring with unity, R a prime K-algebra of characteristic different from 2, d a non-zero derivation of R, I a non-zero right ideal of R, f($x_1,{\cdots},\;x_n$) a multilinear polynomial in n non-commuting variables over K, a $\in$ R. Supppose that, for any $x_1,{\cdots},\;x_n\;\in\;I,\;a[d(f(x_1,{\cdots},\;x_n)),\;f(x_1,{\cdots},\;x_n)]$ = 0. If $[f(x_1,{\cdots},\;x_n),\;x_{n+1}]x_{n+2}$ is not an identity for I and $$S_4(I,\;I,\;I,\;I)\;I\;\neq\;0$$, then aI = ad(I) = 0.

TIGHT CLOSURES AND INFINITE INTEGRAL EXTENSIONS

  • Moon, Myung-In;Cho, Young-Hyun
    • Bulletin of the Korean Mathematical Society
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    • v.29 no.1
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    • pp.65-72
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    • 1992
  • All rings are commutative, Noetherian with identity and of prime characteristic p, unless otherwise specified. First, we describe the definition of tight closure of an ideal and the properties about the tight closure used frequently. The technique used here for the tight closure was introduced by M. Hochster and C. Huneke [4,5, or 6]. Using the concepts of the tight closure and its properties, we will prove that if R is a complete local domain and F-rational, then R is Cohen-Macaulay. Next, we study the properties of R$^{+}$, the integral closure of a domain in an algebraic closure of its field of fractions. In fact, if R is a complete local domain of characteristic p>0, then R$^{+}$ is Cohen-Macaulay [8]. But we do not know this fact is true or not if the characteristic of R is zero. For the special case we can show that if R is a non-Cohen-Macaulay normal domain containing the rationals Q, then R$^{+}$ is not Cohen-Macaulay. Finally we will prove that if R is an excellent local domain of characteristic p and F-ratiional, then R is Cohen-Macaulay.aulay.

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Digital Calibration Technique for Cyclic ADC based on Digital-Domain Averaging of A/D Transfer Functions (아날로그-디지털 전달함수 평균화기법 기반의 Cyclic ADC의 디지털 보정 기법)

  • Um, Ji-Yong
    • Journal of the Institute of Electronics and Information Engineers
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    • v.54 no.6
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    • pp.30-39
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    • 2017
  • A digital calibration technique based on digital-domain averaging for cyclic ADC is proposed. The proposed calibration compensates for nonlinearity of ADC due to capacitance mismatch of capacitors in 1.5-bit/stage MDAC. A 1.5-bit/stage MDAC with non-matched capacitors has symmetric residue plots with respect to the ideal residue plot. This intrinsic characteristic of residue plot of MDAC is reflected as symmetric A/D transfer functions. A corrected A/D transfer function can be acquired by averaging two transfer functions with non-linearity, which are symmetric with respect to the ideal analog-digital transfer function. In order to implement the aforementioned averaging operation of analog-digital transfer functions, a 12-bit cyclic ADC of this work defines two operational modes of 1.5-bit/stage MDAC. By operating MDAC as the first operational mode, the cyclic ADC acquires 12.5-bits output code with nonlinearity. For the same sampled input analog voltage, the cyclic ADC acquires another 12.5-bits output code with nonlinearity by operating MDAC as the second operational mode. Since analog-digital transfer functions from each of operational mode of 1.5-bits/stage MDAC are symmetric with respect to the ideal analog-digital transfer function, a corrected 12-bits output code can be acquired by averaging two non-ideal 12.5-bits codes. The proposed digital calibration and 12-bit cyclic ADC are implemented by using a $0.18-{\mu}m$ CMOS process in the form of full custom. The measured SNDR(ENOB) and SFDR are 65.3dB (10.6bits) and 71.7dB, respectively. INL and DNL are measured to be -0.30/-0.33LSB and -0.63/+0.56LSB, respectively.