• Proceedings of the KIEE Conference
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• 1999.11c
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• pp.742-744
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• 1999

In this paper, a new precharge type PFD for fast locking time of PLL is suggested. It is realized by inserting NMOS transistor and inverter into the precharge part of PFD for isolating the reset of the Up signal from the feedback signal. The new precharge type PFD generates the Up signal while the feedback signal is fixed at a high level. Therefore the new PFD output is increased than the conventional precharge type PFD output. As a result of the increased PFD output, fast locking of PLLs is achieved. Additionally, with control the falling time of the inverter, the dead-zone is reduced and the jitter characteristics are improved. The whole characteristics of PFD and PLL are simulated by using HSPICE. Simulation results show that the dead-zone is 20ps and the locking time of PLL using the new PFD is 38ns at the 350MHz frequency of referecne signal. This value is quite small compared with conventional PFD.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.733-738
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• 2006

As the film transistor-liquid crystal display (TFTLCD) panels become larger and provide higher resolution, the propagation delay of row and column lines, the voltage modulation of Vcom, and the response time of liquid crystal affect the display images now more than in the past. It is more important to understand the electrical characteristic of TFT-LCD panels these days. This paper describes the electrical model of a 15-inch XGA ($1024{\times}768$) TFT-LCD panel. The parasitic resistance and capacitance of its panel are obtained by 3D simulation of a sub pixel. The accuracy of these data is verified by the measured values in an actual panel [1]. The developed panel simulation platform, the equivalent circuit of a 15-inch XGA panel, is simulated by HSPICE. The results of simulation are compared with those of experiment, according to changing the width of signal. Especially, the proposed simulation platform for modeling TFTLCD panels can be applied to large size LCD TVs. It can help panel and circuit designers to verify their ideas without making actual panels and circuits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1222-1225
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• 2004

This paper presents multibit Sigma-Delta ADC using noise-shaped dynamic element matching(DEM). 5-bit flash ADC for multibit quantization in Sigma Delta modulator offers the following advantages such as lower quantization noise, more accurate white-noise level and more stability over single quantization. For the feedback paths consisting of DAC, the DAC element should have a high matching requirement in order to maintain the linearity performance which can be obtained by the modulator with a multibit quantizer. The DEM algorithm is implemented in such a way as to minimize additional delay within the feedback loop of the modulator Using this algorithm, distortion spectra from DAC linearity errors are shaped. Sigma Delta ADC achieves 82dB signal to noise ratio over 615H7z bandwidth, and 62mW power dissipation at a sampling frequency of 19.6MHz. This Sigma Delta ADC is designed to use 0.25um CMOS technology with 2.5V supply voltage and verified by HSPICE simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1254-1257
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• 2004

This paper presents a built-in current sensor(BICS) that can detect defects in CMOS integrated circuits through current testing technique - Iddq test. Current test has recently been known to a complementary testing method because traditional voltage test cannot cover all kinds of bridging defects. So BICS is widely used for current testing. but there are some critical issues - a performance degradation, low speed test, area overhead, etc. The proposed BICS has a two operating mode- normal mode and test mode. Those methods minimize the performance degradation in normal mode. We also used a current-mode differential amplifier that has a input as a current, so we can realize higher speed current testing. Furthermore, only using 10 MOSFETS and 3 inverters, area overhead can be reduced by 6.9%. The circuit is verified by HSPICE simulation with 0.25 urn CMOS process parameter.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.6
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• pp.63-70
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• 2014

A low-N phase-locked loop clock generator with frequency multiplier is proposed to improve phase noise characteristic. Delay-variance voltage converter (DVVC) generates output voltages according to the delay variance of delay stages in voltage controlled oscillator. The output voltages of average circuit with the output voltages of DVVC are applied to the delay stages in VCO to reduce jitter. The HSPICE simulation of the proposed phase-locked loop clock generator with a $0.18{\mu}m$ CMOS process shows an 11.3 ps of peak-to-peak jitter.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.556-561
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• 2013

Interest in spin-torque oscillators (STOs) has been increasing due to their potential use in communication devices. In particular the magnetic tunnel junction-based STO (MTJ-STO) with high perpendicular anisotropy is gaining attention since it can generate high output power. In this paper, a circuit-level model for an in-plane magnetized MTJ-STO with partial perpendicular anisotropy is proposed. The model includes the perpendicular torque and the shift field for more accurate modeling. The bias voltage dependence of perpendicular torque is represented as quadratic. The model is written in Verilog-A, and simulated using HSPICE simulator with a current-mirror circuit and a multi-stage wideband amplifier. The simulation results show the proposed model can accurately replicate the experimental data such that the power increases and the frequency decreases as the value of the perpendicular anisotropy gets close to the value of the demagnetizing field.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.9
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• pp.24-29
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• 2010

This paper presents the RF modeling for silicon nanowire MOSFET with 30 nm channel length and 5 nm channel radius. Equations for analytical parameter extraction are derived by analysis of Y-parameter. Accuracies of the new model and extracted parameters have been verified by 3-dimensional device simulation data up to 100 GHz. The model verifications are performed under conditions of saturation region ($V_{gs}$ = $_{ds}$ = 1 V) and linear region ($V_{gs}$ = 1 V, $V_{ds}$ = 0.5 V). The RMS modeling error of Y-parameters was calculated to be 1 %.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.4
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• pp.1-6
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• 2012

This paper presents the extraction and analysis of small-signal parameters of tunneling field-effect transistors (TFETs) by using TCAD device simulation. The channel lengths ($L_G$) of the simulated devices varies from 50 nm to 100 nm. The parameter extraction for TFETs have been performed by quasi-static small-signal model of conventional MOSFETs. The small-signal parameters of TFETs with different channel lengths were extracted according to gate bias voltage. The $L_G$-dependency of the effective gate resistance, transconductance, source-drain conductance, and gate capacitance are different with those of conventional MOSFET. The $f_T$ of TFETs is inverely proportional not to $L_G{^2}$ but to $L_G$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.104-112
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• 2007

We developed a $7{\times}7$ parallel multiplier using LTPS-TFT. The proposed multiplier has multi-valued logic 7-3 Compressor with folding, 3-2 Compressor, and final carry propagation adder. Architecture minimized the carry propagation. And power consumption reduced by switching the current source to the circuit which is operated in current mode. The proposed multiplier improved PDP by 23%, EDP by 59%, and propagation delay time by 47% compared with Wallace Tree multiplier.

• Journal of Sensor Science and Technology
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• v.14 no.6
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• pp.430-437
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• 2005

In this paper, we proposed a biologically inspired light-adaptive edge detection circuit based on the human retina. A saturating resistive network was suggested for light adaptation and simulated by using HSPICE. The light adaptation mechanism of the edge detection circuit was quantitatively analyzed by using a simple model of the saturating resistive element. A light-adaptive capability of the edge detection circuit was confirmed by using the one-dimensional array of the 128 pixels with various levels of input light intensity. Experimental data of the saturating resistive element was compared with the simulated results. The entire capability of the edge detection circuit, implemented with the saturating resistive network, was investigated through the two-dimensional array of the $64{\times}64$ pixels