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RF Modeling of Silicon Nanowire MOSFETs  

Kang, In-Man (School of Electronics Engineering, Kyungpook National University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.47, no.9, 2010 , pp. 24-29 More about this Journal
Abstract
This paper presents the RF modeling for silicon nanowire MOSFET with 30 nm channel length and 5 nm channel radius. Equations for analytical parameter extraction are derived by analysis of Y-parameter. Accuracies of the new model and extracted parameters have been verified by 3-dimensional device simulation data up to 100 GHz. The model verifications are performed under conditions of saturation region ($V_{gs}$ = $_{ds}$ = 1 V) and linear region ($V_{gs}$ = 1 V, $V_{ds}$ = 0.5 V). The RMS modeling error of Y-parameters was calculated to be 1 %.
Keywords
silicon nanowire; MOSFET; model; Y-parameter;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
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