• 제목/요약/키워드: high speed mode

검색결과 1,015건 처리시간 0.036초

기판전압에 따른 나노와이어 Junctionless MuGFET의 전류-전압 특성 (Current-Voltage Characteristics with Substrate Bias in Nanowire Junctionless MuGFET)

  • 이재기;박종태
    • 한국정보통신학회논문지
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    • 제16권4호
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    • pp.785-792
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    • 2012
  • 본 연구에서는 고속 및 저전력 스위칭 소자 응용을 위하여 n-채널 무접합 및 반전모드 MuGFET 와 p-채널 무접합 및 축적모드 MuGFET의 기판전압에 따른 전류-전압 특성을 측정하고 비교 분석하였다. 기판전압에 따른 문턱전압과 포화 드레인 전류 변화로부터 n-채널 소자에서는 반전모드 소자가 무접합 소자보다 변화량이 크며 p-채널 소자에서는 무접합 소자가 축적모드 소자보다 변화량이 큰 것을 알 수 있었다. 전달컨덕턴스 변화는 n-채널 소자보다 p-채널 소자의 변화량이 큰 것을 알 수 있었다. 그리고 subthreshold swing 특성으로부터 n-채널 소자와 p-채널 무접합 소자는 기판전압 변화에 따라 S값의 변화가 거의 없지만 p-채널 축적모드 소자는 기판전압이 양의 방향으로 증가할 때 S 값이 증가하는 것으로 관측되었다. 기판전압을 이용한 고속 및 저전력 스위칭 소자 응용 측면에서는 n-채널 소자에서는 반전모드 소자가 p-채널 소자에서는 무접합 소자가 더 좋은 특성을 보였다.

SHS법에 의한 TiC의 합성 및 소결특성 (Systhesis and Sintering Characterization of TiC by Self-Propagating High Temperature Synthesis)

  • 이형복;정윤중;여철현;김관일
    • 한국세라믹학회지
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    • 제27권1호
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    • pp.118-126
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    • 1990
  • Titanium Cabride powders were prepared by the self-propagating high temperature synthesismethod in air from the mixture of metal titanium powder and carbon powder. The result are as follows : 1. The conversion effciency of higher than 95% can be obtained and the lattice constant value of the product was 4.322$\AA$. 2. The combustion mode, velocity and temperature of combustion wave was photographed using high-speed camera, and showed steady-state, velocity of 15.414mm/sec at 250$0^{\circ}C$. 3. The relative density and MOR strength of TiC sintered at 180$0^{\circ}C$ for 90 minutes by hot-pressing under the pressure of 200kg/$\textrm{cm}^2$ were 95% and 395MPa, respectively.

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전자교환기용 고효율 48V 400A급 전력변환장치의 시작 (The Converter of High Efficiency 48V 400A for Electronic Exchange)

  • 박성우;서기영;전중함;김부국;이현우
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 1998년도 연구회 합동 학술발표회 논문집
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    • pp.60-63
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    • 1998
  • The widely used power supply (Switched Mode Power Supply : SMPS) as a source in order to stabilize direct current for electronics or communication systems has merits, when it is compared to the existing source for stability, such as high efficiency, small size, light weight by means of switching process of the semiconductor device which controls the flow of power. However, due to existence of inductors and capacitors used for charging energy, the source part in electronic or communication systems hasn't reached the speed, that is supposed to get, for achieving smaller size and lighter weight. In order to get smallness in size, it is necessary to increase switching frequency. And that makes devices for measuring energy smaller. Nevertheless, the rise switching frequency brings increases in switching loss, inductor loss, and power loss. Also, the occurrence of surge and noise caused by high frequency switching is getting higher. The resonant converter has been considered as one of methods that give solutions for the problems of SMPS and that method have been paid attention as a source technology in electronics and communication.

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갈륨 소스를 이용한 집속이온빔 컬럼 개발 (Development of Focused Ion Beam Column Using Ga Source)

  • 김창조;이재승;최윤;최은하;박철우;김종국;김영권;엄창용
    • 대한기계학회논문집A
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    • 제33권3호
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    • pp.185-189
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    • 2009
  • Focused ion beam system was designed, which includes LMIS, electrostatic lens and high voltage power supply. Control program is updated for high speed image processing. The details of vibration-free vacuum system and other important electrical parts were trouble-shooted for appropriately controlling high acceleration voltages.

높은 BER 환경하에서 ATM 헤더 오류 제어 모드의 성능 분석 (Performance analysis fo aTM header error control mode over high BER environments)

  • 한덕찬;안동명
    • 한국통신학회논문지
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    • 제23권9A호
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    • pp.2282-2288
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    • 1998
  • 상용 ATM 기술은 전송로 상태가 극히 양호한 광섬유의 사용을 전제로 한 전송 방식이기 때문에 군 통신과 같이 전송로의 특성이 나쁜 무선 환경에 적응하기에는 문제가 있다. 본 연구에서는 이러한 문제를 해결하기 위해 먼저 상용 ATM 프로토콜을 높은 BER 환경에 적용할 때 나타나는 ATM 셀 전달 특성을 정량적으로 파악하였다. 시뮬레이션을 통하여 무선 환경에 상용 HEC 알고리즘과 에러 제어 방식을 적용할 수 잇는지 여부를 분석하였다. 그리고, 이러한 결과를 토대로 상용 ATM 프로토콜을 무선 환경에 적용하기 위해 필요한 개선 방향을 제시하였다.

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SHS법에 의한 Ti-B 계 세라믹스의 합성 및 소결특성 (Synthesis and Characterization of Ti-B System Ceramics Prepared by Self-Propagating High-Temperature Synthesis Method)

  • 이형복;최일선;오응주;여철현
    • 한국세라믹학회지
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    • 제28권3호
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    • pp.234-242
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    • 1991
  • Ti-B system ceramics were prepared by the self-propagating high-temperature synthesis method from the mixture of metal titanium and boron powders The major crystalline phase as a function of boron content was TiB for mixtures containing 0.5 or 1.0mol B, and TiB2 for these containing over 1.3mol B. The combustion mode observed by a high-speed camera was steady-state. The Combustion velocity increased with increasing the boron content. Sintered TiB2 specimen showed the density of 97% of theoretical valve, Vicker's hardness of 2250kg/㎟ for 0.2kg load and three-point-flexure strength of 500MPa.

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Two-Input Max/Min Circuit for Fuzzy Inference System

  • P. Laipasu;A. Chaikla;A. Jaruwanawat;P. Pannil;Lee, T.;V. Riewruja
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2001년도 ICCAS
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    • pp.105.3-105
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    • 2001
  • In this paper, a current mode two-input maximum (Max) and minimum (Min) operations scheme, which is a useful building block for analog fuzzy inference systems, is presented. The Max and Min operations are incorporated in the same scheme with parallel processing. The proposed scheme comprises a MOS class AB/B configuration and current mirrors. Its simple structure can provide a high efficiency. The performance of the scheme exhibits a very sharp transfer characteristic and high accuracy. The proposed scheme achieves a high-speed operation and is suitable for real-time systems. The simulation results verifying the performances of the scheme are agreed with the expected values.

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Partial EBG Structure with DeCap for Ultra-wideband Suppression of Simultaneous Switching Noise in a High-Speed System

  • Kwon, Jong-Hwa;Kwak, Sang-Il;Sim, Dong-Uk;Yook, Jong-Gwan
    • ETRI Journal
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    • 제32권2호
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    • pp.265-272
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    • 2010
  • To supply a power distribution network with stable power in a high-speed mixed mode system, simultaneous switching noise caused at the multilayer PCB and package structures needs to be sufficiently suppressed. The uni-planar compact electromagnetic bandgap (UC-EBG) structure is well known as a promising solution to suppress the power noise and isolate noise-sensitive analog/RF circuits from a noisy digital circuit. However, a typical UC-EBG structure has several severe problems, such as a limitation in the stop band's lower cutoff frequency and signal quality degradation. To make up for the defects of a conventional EBG structure, a partially located EBG structure with decoupling capacitors is proposed in this paper as a means of both suppressing the power noise propagation and minimizing the effects of the perforated reference plane on the signal quality. The proposed structure is validated and investigated through simulation and measurement in both frequency and time domains.

위치결정 스테이지의 고속 정밀 위치결정을 위한 입력성형명령 생성 기법 (Command Generation Method for High-Speed and Precise Positioning of Positioning Stage)

  • 장준원;박상원;홍성욱
    • 한국정밀공학회지
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    • 제25권10호
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    • pp.122-129
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    • 2008
  • This paper deals with precise positioning of a high-speed positioning stage without inducing residual vibration by using an input shaping technique. Input shaping is well known to be a very effective tool for suppressing the residual vibration of flexible structures. However, the ordinary input shaping for positioning stages is designated mostly for velocity regulation, not for the residual vibration at the target position. The main difficulties in implementing input shaping along with precise positioning are the time delay caused by the servo system characteristics and the s-curve feature often employed in some motor controllers. This paper analyzes the dynamic responses of a single-mode-dominate stage system subjected to input shaping. A theoretical model is developed io investigate the nature of system. In order to overcome the difficulty, this paper proposes an improved input shaper based on modified command profile generation. The proposed method is proved effective through experiments and simulations.

p+링과 p 채널 게이트를 갖는 역채널 LIGBT의 전기적인 특성 (Electrical Characteristics of Novel LIGBT with p Channel Gate and p+ Ring at Reverse Channel Structure)

  • 강이구;성만영
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권3호
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    • pp.99-104
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    • 2002
  • lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring.