Browse > Article

Electrical Characteristics of Novel LIGBT with p Channel Gate and p+ Ring at Reverse Channel Structure  

Gang, Lee-Gu (고려대학 전기공학과)
Seong, Man-Yeong (고려대학 전기공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.51, no.3, 2002 , pp. 99-104 More about this Journal
Abstract
lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring.
Keywords
Reverse Channel; p-channel gate; Latch up; p+ ring; High Speed; No buffer layer; No Tail Current;
Citations & Related Records
연도 인용수 순위
  • Reference
1 B. J. Baliga, 'Comparison of Gold, Platinum, and Electron Irradiation for Controlling Lifetime in Power Rectifiers', IEEE Trans. Electron Devices, Vol. 24, No. 6, June, 1977   DOI   ScienceOn
2 D. S. Kuo, 'Modeling the Turn off Characteristics of the Bipolar-MOS Transistor', IEEE Trans. Electron Devices, vol. EDL-6, No. 5, pp. 211-214, 1985   DOI   ScienceOn
3 L. Sahesan, 'Simulation of Transient Turn-off Characteristics of a Trench Emitter Insulated Gate Bipolar Transistor (IGBT)', proc. 20th International conference on microelectronics, vol. 2, pp. 697-700, 1995   DOI
4 B. J. Baliga, 'Fast Switching Insulated Gate Transistor', IEEE Trans. Electron Devices Letters, vol. EDL-4, No. 12, pp. 452-454, 1983   DOI   ScienceOn
5 B. K. Bose, 'Power Electronics-A Technology Review', proc. of IEEE, vol. 76, No. 8, pp. 1303-1334, 1992   DOI   ScienceOn
6 B. J. Baliga, 'Power Semiconductor Devices', PWS Publishing Company, 1996
7 B. J. Baliga, 'Trends in Power Semiconductor Devices', proc. of IEEE, vol. 43, No. 10, pp. 1717-1731, 1996   DOI   ScienceOn
8 S. K. Ghandi, 'Semiconductor Power Device', New York : John Wiley and sons, pp. 46-50, 1977
9 P. L. Hower, 'Power Semiconductor Devices : An Overview', proc. of IEEE, vol. 76, No. 4, pp. 335-342, 1988   DOI   ScienceOn
10 M. R Simpson, 'Analysis of Negative Differential Resistance in the I-V Characteristics of Shorted-Anode LIGBT's', IEEE Trans. Electron Devices, Vol. 38, No. 7, July, 1991   DOI   ScienceOn
11 A. Bhalla, 'Effect of IGBT Switching Dynamics on Loss Calculations in High Speed Applications', IEEE Electron Device Letters, vol. 20, No. 1, pp. 51-53, 1999 10.1109/55.737571   DOI   ScienceOn
12 M. Saggio, 'Innovative Localized Lifetime Control in High-Speed IGBT's', IEEE Electron Device Letters, vol. 18, No. 7, pp. 333-335, 1997   DOI   ScienceOn
13 Ettore Napoli, 'Numerical Analysis of Local Lifetime Control for High-Speed Low-Loss P-i-N Diode Design', IEEE Trans. Power Electronic, Vol. 14, No. 4, pp. 615-621, July, 1999   DOI   ScienceOn
14 Hirofumi Akagi, 'The State of the Art of Power Electronics in Japan', IEEE Trans. on Power Electronics, vol. 13, No. 2, pp. 345-356, 1998   DOI   ScienceOn
15 V. Rainera, 'Voids in Silicon Power Devices', Solid-State Electronics, vol. 42, No. 12, pp. 2295-2301, 1998   DOI   ScienceOn
16 TMA MEDICI : Two-Dimensional Device Simulation Program, Technology Modeling Associate, Inc., 1993
17 D. Disney, 'Fast Switching LIGBT Devices Fabricated in SOI Substrates', proc. of ISPSD 92, pp. 48-51, 1992