• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.785-792
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• 2012

In this paper, a current-voltage characteristics of n-channel junctionless and inversion mode(IM) MuGFET, and p-channel junctionless and accumulation mode(AM) MuGFET has been measured and analyzed for the application in high speed and low power switching devices. From the variation of the threshold voltage and the saturation drain current with the substrate bias voltages, their variations in IM devices are larger than junctionless devices for n-channel devices, but their variations in junctioness devices are larger than AM devices for p-channel devices. The variations of transconductance with substrate biases are more significant in p-channel devices than n-channel devices. From the characteristics of subthreshold swing, it was observed that the S value is almost independent on the substrate biases in n-channel devices and p-channel junctionless devices but it is increased with the increase of the substrate biases in p-channel AM devices. For the application in high speed and low power switching devices using the substrate biases, IM device is better than junctionless devices for n-channel devices and junctionless device is better than AM devices for p-channel devices.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.118-126
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• 1990

Titanium Cabride powders were prepared by the self-propagating high temperature synthesismethod in air from the mixture of metal titanium powder and carbon powder. The result are as follows : 1. The conversion effciency of higher than 95% can be obtained and the lattice constant value of the product was 4.322$\AA$. 2. The combustion mode, velocity and temperature of combustion wave was photographed using high-speed camera, and showed steady-state, velocity of 15.414mm/sec at 250$0^{\circ}C$. 3. The relative density and MOR strength of TiC sintered at 180$0^{\circ}C$ for 90 minutes by hot-pressing under the pressure of 200kg/$\textrm{cm}^2$ were 95% and 395MPa, respectively.

• Proceedings of the KIPE Conference
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• 1998.11a
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• pp.60-63
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• 1998

The widely used power supply (Switched Mode Power Supply : SMPS) as a source in order to stabilize direct current for electronics or communication systems has merits, when it is compared to the existing source for stability, such as high efficiency, small size, light weight by means of switching process of the semiconductor device which controls the flow of power. However, due to existence of inductors and capacitors used for charging energy, the source part in electronic or communication systems hasn't reached the speed, that is supposed to get, for achieving smaller size and lighter weight. In order to get smallness in size, it is necessary to increase switching frequency. And that makes devices for measuring energy smaller. Nevertheless, the rise switching frequency brings increases in switching loss, inductor loss, and power loss. Also, the occurrence of surge and noise caused by high frequency switching is getting higher. The resonant converter has been considered as one of methods that give solutions for the problems of SMPS and that method have been paid attention as a source technology in electronics and communication.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.3
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• pp.185-189
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• 2009

Focused ion beam system was designed, which includes LMIS, electrostatic lens and high voltage power supply. Control program is updated for high speed image processing. The details of vibration-free vacuum system and other important electrical parts were trouble-shooted for appropriately controlling high acceleration voltages.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.9A
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• pp.2282-2288
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• 1998

ATM techniques ar ewidely accepted as a key transport mechanism infiber-based broadband network. However, to keep pace with the rpid emerging wireless high speed market, it is desirable to verify the reliability & daptability of ATM protocol on high error environment. This paper investigates the various ATM cell transfer characteristics over air interface. Though simulation, we analyze their usabilities of HeC mechanism and single-bit error correction algorithm based on ITU-T recommendation. We propose some methods for cell transport improvement over errored environment and investigate their performance for suggested schemes.

• Journal of the Korean Ceramic Society
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• v.28 no.3
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• pp.234-242
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• 1991

Ti-B system ceramics were prepared by the self-propagating high-temperature synthesis method from the mixture of metal titanium and boron powders The major crystalline phase as a function of boron content was TiB for mixtures containing 0.5 or 1.0mol B, and TiB2 for these containing over 1.3mol B. The combustion mode observed by a high-speed camera was steady-state. The Combustion velocity increased with increasing the boron content. Sintered TiB2 specimen showed the density of 97% of theoretical valve, Vicker's hardness of 2250kg/㎟ for 0.2kg load and three-point-flexure strength of 500MPa.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.105.3-105
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• 2001

In this paper, a current mode two-input maximum (Max) and minimum (Min) operations scheme, which is a useful building block for analog fuzzy inference systems, is presented. The Max and Min operations are incorporated in the same scheme with parallel processing. The proposed scheme comprises a MOS class AB/B configuration and current mirrors. Its simple structure can provide a high efficiency. The performance of the scheme exhibits a very sharp transfer characteristic and high accuracy. The proposed scheme achieves a high-speed operation and is suitable for real-time systems. The simulation results verifying the performances of the scheme are agreed with the expected values.

• ETRI Journal
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• v.32 no.2
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• pp.265-272
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• 2010

To supply a power distribution network with stable power in a high-speed mixed mode system, simultaneous switching noise caused at the multilayer PCB and package structures needs to be sufficiently suppressed. The uni-planar compact electromagnetic bandgap (UC-EBG) structure is well known as a promising solution to suppress the power noise and isolate noise-sensitive analog/RF circuits from a noisy digital circuit. However, a typical UC-EBG structure has several severe problems, such as a limitation in the stop band's lower cutoff frequency and signal quality degradation. To make up for the defects of a conventional EBG structure, a partially located EBG structure with decoupling capacitors is proposed in this paper as a means of both suppressing the power noise propagation and minimizing the effects of the perforated reference plane on the signal quality. The proposed structure is validated and investigated through simulation and measurement in both frequency and time domains.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.10
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• pp.122-129
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• 2008

This paper deals with precise positioning of a high-speed positioning stage without inducing residual vibration by using an input shaping technique. Input shaping is well known to be a very effective tool for suppressing the residual vibration of flexible structures. However, the ordinary input shaping for positioning stages is designated mostly for velocity regulation, not for the residual vibration at the target position. The main difficulties in implementing input shaping along with precise positioning are the time delay caused by the servo system characteristics and the s-curve feature often employed in some motor controllers. This paper analyzes the dynamic responses of a single-mode-dominate stage system subjected to input shaping. A theoretical model is developed io investigate the nature of system. In order to overcome the difficulty, this paper proposes an improved input shaper based on modified command profile generation. The proposed method is proved effective through experiments and simulations.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.3
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• pp.99-104
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• 2002

lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring.