• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2006년도 춘계종합학술대회
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• pp.869-872
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• 2006

본 연구에서는 나노구조 이중게이트 FinFET에 대하여 문턱전압이동 특성을 분석하였다. 분석을 위하여 분석학적 전류모델을 개발하였으며 열방사 전류 및 터널링 전류를 포함하였다. 열방사전류는 포아슨방정식에 의하여 구한 포텐셜분포 및 맥스월-볼쯔만통계를 이용한 캐리어분포를 이용하여 구하였으며 터널링전류는 WKB(Wentzel-framers-Brillouin)근사를 이용하였다. 이 두 모델은 상호 독립적이므로 각각 전류를 구해 더함으로써 문턱전압을 구하였다. 본 연구에서 제시한 모델을 이용하여 구한 문턱전압이동값이 이차원시뮬레이션값과 비교되었으며 잘 일치함을 알 수 있었다. 분석 결과 10nm이하에서 특히 터널링의 영향이 증가하여 문턱전압이동이 매우 현저하게 나타남을 알 수 있었다. 이러한 단채널현상을 감소시키기 위하여 채널두께 및 게이트산화막의 두께를 가능한한 얇게 제작하여야함을 알았으며 이를 위한 산화공정개발이 중요하다고 사료된다.

• 한국정보통신학회논문지
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• 제11권4호
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• pp.760-765
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• 2007

본 연구에서는 나노구조 이중게이트 FinFET에 대하여 문턱전압이동 특성 및 드레인유기장벽저하(Drain Induced Barrier Lowering; DIBL)특성을 분석하였다. 분석을 위하여 분석학적 전류모델을 개발하였으며 열방사전류 및 터널링전류를 포함하였다. 열방사전류는 포아슨방정식에 의하여 구한 포텐셜분포 및 맥스월-볼쯔만통계를 이용한 캐리어분포를 이용하여 구하였으며 터널링 전류는 WKB(Wentzel-Kramers-Brillouin)근사를 이용하였다. 이 두 모델은 상호 독립적이므로 각각 전류를 구해 더함으로써 문턱 전압을 구하였다. 본 연구에서 제시한 모델을 이용하여 구한 문턱 전압 이동값이 이차원 시뮬레이션값과 비교되었으며 잘 일치함을 알 수 있었다. 분석 결과 10nm 이하에서 특히 터널링의 영향이 증가하여 문턱전압이동 및 DIBL이 매우 현저하게 나타남을 알 수 있었다. 이러한 단채널현상을 감소시키기 위하여 채널두께 및 게이트산화막의 두께를 가능한한 얇게 제작하여야함을 알았으며 이를 위한 산화공정개발이 중요하다고 사료된다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2009년도 추계학술대회
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• pp.928-930
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• 2009

본 연구에서는 3차원 포아송방정식을 이용하여 FinFET의 문턱전압특성을 분석하였다. FinFET는 차세대 나노소자로서 단채널효과를 감소시킬 수 있다는 장점 때문에 많은 연구가 진행중에 있다. 이에 FinFET에서 단채널효과로서 잘 알여진 문턱전압이하 스윙 및 문턱전압 등을 3차원 포아송방정식의 분석학적 모델로 분석하고자 한다. 나노소자인 FinFET의 구조적 특성을 고찰하기 위하여 채널의 두께, 길이, 폭 등의 크기요소에 따라 분석하였다. 본 논문에서 사용한 분석학적 3차원 포아송방정식의 포텐셜모델 및 전송모델은 여러 논문에서 3차원 수치해석학적 값과 비교하여 그 타당성이 입증되었으므로 이 모델을 이용하여 FinFET의 문턱전압 특성 및 문턱전압이하 특성을 분석하였다.

• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.48-55
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• 2024

The changes in threshold voltage and DIBL were investigated for changes in remanent polarization P_r and coercive field E_c, which determine the characteristics of the P-E hysteresis curve of ferroelectric in NCFET (negative capacitance FET). The threshold voltage and DIBL (drain-induced barrier lowering) were observed for a junctionless double gate MOSFET using a gate oxide structure of MFMIS (metal-ferroelectric-metal-insulator-semiconductor). To obtain the threshold voltage, series-type potential distribution and second derivative method were used. As a result, it can be seen that the threshold voltage increases when P_r decreases and E_c increases, and the threshold voltage is also maintained constant when the P_r/E_c is constant. However, as the drain voltage increases, the threshold voltage changes significantly according to P_r/E_c, so the DIBL greatly changes for P_r/E_c. In other words, when P_r/E_c=15 pF/cm, DIBL showed a negative value regardless of the channel length under the conditions of ferroelectric thickness of 10 nm and SiO₂ thickness of 1 nm. The DIBL value was in the negative or positive range for the channel length when the P_r/E_c is 25 pF/cm or more under the same conditions, so the condition of DIBL=0 could be obtained. As such, the optimal condition to reduce short channel effects can be obtained since the threshold voltage and DIBL can be adjusted according to the device dimension of NCFET and the P_r and E_c of ferroelectric.

• 기술사
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• 제43권6호
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• pp.31-34
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• 2010

Recently, due to localized heavy rain and flash floods in urban areas is becoming more frequent flood damage. To prevent flood inundation damage, to formulate the diverse directions in connection with the drainage system of buildings, roads, sewerage, pump stations, detention (retention) pond, and streams is very important. In addition, it is important for the uniform design criteria, the consistent of hydrologic and hydraulic analysis method, and a flood disaster mitigation systems connected with structural and nonstructural measures. To accomplish this, the method such as installation of storage facilities, infiltration facilities, and underground water tank, the optimal size of the design gutter and grate of the road, ensure the capacity of pumping stations, and the installation of a flood control channel into the deep underground requires comprehensive measures dimension in urban areas.

• Journal of Electrical Engineering and Technology
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• 제8권6호
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• pp.1497-1502
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• 2013

Recently, the junctionless (JL) transistors realized by a single-type doping process have attracted attention instead of the conventional metal-oxide-semiconductor field-effect transistors (MOSFET). The JL transistor can overcome MOSFET's problems such as the thermal budget and short-channel effect. Thus, the JL transistor is considered as great alternative device for a next generation low standby power silicon system. In this paper, the JL FinFET was simulated with a three dimensional (3D) technology computer-aided design (TCAD) simulator and optimized for DC characteristics according to device dimension and doping concentration. The design variables were the fin width ($W_{fin}$), fin height ($H_{fin}$), and doping concentration ($D_{ch}$). After the optimization of DC characteristics, RF characteristics of JL FinFET were also extracted.

• 한국해양공학회지
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• 제24권4호
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• pp.47-52
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• 2010

In this paper, the shapes of windsurfing boards are proposed for the promotion of their public utilization. Initially, we investigated the principal dimensions of 1,500 windsurfing boards that were produced in the last six years to categorize the characteristics of the boards. Then, model tests were performed in a circulating water channel to determine the resistance characteristics and the flow phenomena, including the wetness of the decks. After analyzing the principal dimensions and the results of the tests of existing windsurfing boards, we proposed four public board shapes that resulted from changing the shapes of the nose and rail and protecting the deck of free-ride boards from wetness. Finally, we predicted the performance of the four proposed windsurfing boards.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 I
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• pp.113-116
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• 2003

Mobile communication network because information through radio channel is passed, information may be eavesdropped and need information security countermeasure in communication network dimension for safe information exchange because there is possibility that is manufactured. This paper used Public Key Cryptography for protection and authentication connected with user authentication. Use public key and private key that is asymmetry encryption key to quote that is used at encryption, decryption of Public key. Encrypt IMSI and authentication message that is transmitted MS, VLR and HLR interval to public key, wish to embody transmitted authentication protocol safety.

• 전자공학회논문지D
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• 제35D권7호
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• pp.109-116
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• 1998

In this work was produced and analyzed a z-cut Ti:LiNbO$_{3}$ optical waveguide which applies for various optical devices.A waveguide channel with a thickness 8 .mu.m and a length 66,000.mu.m and a mach-zehnder interferometer type waveguide were fabricated at a diffusion temperature 1050.deg. C for 6-8hours in a wet $O_{2}$ environment. The resulting Ti:LiNbO$_{3}$ optical waveguide was measured to have a Ti-strip thickness of 950.angs. and low loss. Surfaces and cross-sections of a fabricated waveguide were analysed. The mode pattern anaysis revealed that the waveguide showed a single mode at a 1550nm wavelength. The effective dimension of the waveguide was calculated by measuring a gaussian profile; Wx=10.95.mu. and Wy=9.14.mu.m. a propagation loss, of 0.50dB/cm for a TM mode and 0.45dB/cm for a TE mode, was low enough to be accepatable for optical devices.

• Journal of Mechanical Science and Technology
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• 제20권3호
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• pp.297-309
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• 2006

This paper deals with a novel structure for single-cell characterization which makes use of bimorph micro thermal actuators combined with electrical sensor device and integrated microfluidic channel. The goal for this device is to capture and characterize individual biocell. Quantitative and qualitative characteristics of bimorph thermal actuator were analyzed with finite element analysis methods. Furthermore, optimization for the dimension of cantilevers and integrated parallel probe systems with microfluidic channels is able to be realized through the virtual simulation for actuation and the practical fabrication of prototype of probes. The experimental value of probe deflection was in accordance with the simulated one.