Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Impact of Remanent Polarization and Coercive Field on Threshold Voltage and Drain-Induced Barrier Lowering in NCFET (negative capacitance FET)

NCFET (negative capacitance FET)에서 잔류분극과 항전계가 문턱전압과 드레인 유도장벽 감소에 미치는 영향

  • Hakkee Jung (Department of Electronic Engineering, Kunsan National University)
  • Received : 2023.08.17
  • Accepted : 2023.09.19
  • Published : 2024.01.01
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Abstract

The changes in threshold voltage and DIBL were investigated for changes in remanent polarization Pr and coercive field Ec, which determine the characteristics of the P-E hysteresis curve of ferroelectric in NCFET (negative capacitance FET). The threshold voltage and DIBL (drain-induced barrier lowering) were observed for a junctionless double gate MOSFET using a gate oxide structure of MFMIS (metal-ferroelectric-metal-insulator-semiconductor). To obtain the threshold voltage, series-type potential distribution and second derivative method were used. As a result, it can be seen that the threshold voltage increases when Pr decreases and Ec increases, and the threshold voltage is also maintained constant when the Pr/Ec is constant. However, as the drain voltage increases, the threshold voltage changes significantly according to Pr/Ec, so the DIBL greatly changes for Pr/Ec. In other words, when Pr/Ec=15 pF/cm, DIBL showed a negative value regardless of the channel length under the conditions of ferroelectric thickness of 10 nm and SiO2 thickness of 1 nm. The DIBL value was in the negative or positive range for the channel length when the Pr/Ec is 25 pF/cm or more under the same conditions, so the condition of DIBL=0 could be obtained. As such, the optimal condition to reduce short channel effects can be obtained since the threshold voltage and DIBL can be adjusted according to the device dimension of NCFET and the Pr and Ec of ferroelectric.

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References

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