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동결주조로 성형한 La2O3가 첨가된 Al2O3 다공체의 소결 중 입자성장 거동 (Grain growth behavior of porous Al2O3 with addition of La2O3 prepared via freeze-casting)

  • 김성현;우종원;전상채
    • 한국결정성장학회지
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    • 제32권6호
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    • pp.231-238
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    • 2022
  • Al2O3 다공체는 필터 및 촉매 담체 등으로 활용되며 그 기능성과 내구성을 확보하기 위해서는 다공성 구조의 기계적 강도가 중요하다. 소결 중 치밀화 및 입자성장을 유리하게 제어하는 것이 기계적 강도 향상에 필수적이며, 본 연구에서는 그 일환으로 La을 첨가하여 동결주조로 성형된 Al2O3 다공체의 입자성장 양상을 분석하였다. 즉, 250 ppm의 La을 첨가한 계에서 1400℃에서 1600℃에 이르는 온도 범위 내에서 소결 시간 및 온도에 대한 평균입도 변화를 관찰하여 Gtn-G0n = kt 관계로부터 exponent(n 값)은 3으로, k = k0exp(-Ea/RT)로부터 입자성장에 대한 활성화 에너지(Ea)는 489.09 kJ/mol로 각각 계산되었다. 이러한 결과는 입자성장에 대한 La의 첨가 효과를 나타내며, La이 Al2O3의 입계 이동속도를 늦춰 입자성장의 억제에 효과가 있음을 방증하므로 기계적 강도에 이롭다. 한편, 향후 원료 분말에 함께 포함되어 있는 미량의 불순물 작용을 관찰하면 La의 기여를 명확히 구분할 수 있으며, 이러한 접근은 향후 다공성 Al2O3에서 입자성장을 제어하는데 사용될 수 있는 첨가제를 선택하는 데 유용하게 사용될 수 있다.

다중준위 상변환 메모리를 위한 Ge2Sb2Te5/Ti/W-Ge8Sb2Te11 구조의 전기적 특성 연구 (A Study on the Electrical Characteristics of Ge2Sb2Te5/Ti/W-Ge8Sb2Te11 Structure for Multi-Level Phase Change Memory)

  • 오우영;이현용
    • 한국전기전자재료학회논문지
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    • 제35권1호
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    • pp.44-49
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    • 2022
  • In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge2Sb2Te5/Ti/W-doped Ge8Sb2Te11, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge2Sb2Te5 and W-doped Ge8Sb2Te11 films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge8Sb2Te11 film was about 1 order larger than that of Ge2Sb2Te5 film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge2Sb2Te5 (150 nm)/Ti (20 nm)/W-Ge8Sb2Te11 (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

Mn-Cu/Al2O3 촉매 상에서 NO, CO 및 CH4 동시 산화 (Simultaneous Oxidation of NO, CO, and CH4 over Mn-Cu/Al2O3 Catalyst)

  • 정지은;이창용
    • 공업화학
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    • 제35권1호
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    • pp.1-7
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    • 2024
  • NO, CO 및 CH4의 동시 산화를 위한 4 종의 Mn-M/Al2O3 (M = Cu, Fe, Co, Ce) 촉매를 제조하여 산화 활성을 비교하고, 동시 산화활성이 가장 높은 Mn-Cu/Al2O3 촉매에 대해 XRD, Raman, XPS, O2-TPD 분석을 수행하였다. XRD 분석 결과, Mn-Cu/Al2O3 촉매에서는 담지된 Mn과 Cu는 복합산화물로 존재하였다. Raman 및 XPS 분석을 통해 Mn-Cu/Al2O3 촉매는 Mn-O-Cu 결합의 형성 과정에서 Mn 이온과 Cu 이온 간의 전자 수수가 일어남을 알 수 있었다. XPS O 1s 및 O2-TPD 분석을 통해 Mn-Cu/Al2O3 촉매는 Mn/Al2O3 촉매에 비해 이동성이 우수한 흡착산소 종이 증가했음을 알 수 있었다. Mn-Cu/Al2O3 촉매의 높은 동시 산화 활성은 이러한 결과에 기인한다고 판단된다. Mn-Cu/Al2O3 촉매 상에서 NO는 CO와 CH4 산화를 촉진하지만, NO 산화는 억제되었다. 이는 NO로부터 산화된 NO2가 CO 및 CH4의 산화제로 사용되었기 때문이라고 추측된다. CO와 CH4의 산화 반응은 경쟁하지만 촉매 활성 온도가 다르기 때문에 그 효과가 두드러지지 않았다.

분말 스퍼터링과 후열처리 복합 공정으로 제조한 주석 함유 갈륨 산화물 다공성 나노와이어 (Porous Sn-incorporated Ga2O3 nanowires synthesized by a combined process of powder sputtering and post thermal annealing)

  • 이하람;강현철
    • 한국결정성장학회지
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    • 제29권6호
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    • pp.245-250
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    • 2019
  • 라디오주파수 분말 스퍼터링 방법으로 sapphire (0001) 기판 위에 Sn을 함유한 β-Ga2O3(β-Ga2O3 : Sn) 나노와이어를 증착하였다. 후열처리 공정의 가스 분위기가 나노와이어 형상의 변화에 미치는 영향을 연구하였다. 800℃에서 진공 중 열처리 과정에서, as-grown 나노와이어는 다공성 구조로 전이하였다. 비화학양론 Ga2O3-x는 화학양론 Ga2O3로 바뀌고, Sn원자는 응집하여 나노클러스터를 형성한다. Sn 나노클러스터는 증발하여 Sn 원자의 함량은 1.31에서 0.27 at%로 감소하였다. Sn원자의 증발로 인하여 나노와이어 표면에 다수의 기공이 형성되고, 이는 β-Ga2O3 : Sn 나노와이어의 체적대비 표면적 비율을 증가시킨다.

Microwave Dielectric Properties of (Ba1-xNax)(Mg0.5-2xY2xW0.5-xTax)O3 Ceramics

  • Hong, Chang-Bae;Kim, Shin;Kwon, Sun-Ho;Yoon, Sang-Ok
    • 한국세라믹학회지
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    • 제56권4호
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    • pp.399-402
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    • 2019
  • The phase evolution, microstructure, and microwave dielectric properties of (Ba1-xNax)(Mg0.5-2xY2xW0.5-xTax)O3 (0 ≤ x ≤ 0.05) ceramics were investigated. All compositions exhibited a 1:1 ordered perovskite structure. As the value of x increased, the dielectric constant (εr) exhibited a tendency to increase slightly. The quality factor reached the maximum value at x = 0.01. The temperature coefficient of resonant frequency (τf) increased from -19.32 ppm/℃ to -5.64 ppm/℃ in the positive direction as x increased. The dielectric constant (εr), quality factor (Q × f0), and temperature coefficient of resonant frequency (τf) of the composition x = 0.05, i.e., (Ba0.95Na0.05)(Mg0.4Y0.1W0.45Ta0.05)O3 were 19.9, 128,553 GHz, and -5.6 ppm/℃, respectively.

COLOCALIZATION OF LOCAL HOMOLOGY MODULES

  • Rezaei, Shahram
    • 대한수학회보
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    • 제57권1호
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    • pp.167-177
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    • 2020
  • Let I be an ideal of Noetherian local ring (R, m) and M an artinian R-module. In this paper, we study colocalization of local homology modules. In fact we give Colocal-global Principle for the artinianness and minimaxness of local homology modules, which is a dual case of Local-global Principle for the finiteness of local cohomology modules. We define the representation dimension rI (M) of M and the artinianness dimension aI (M) of M relative to I by rI (M) = inf{i ∈ ℕ0 : HIi (M) is not representable}, and aI (M) = inf{i ∈ ℕ0 : HIi (M) is not artinian} and we will prove that i) aI (M) = rI (M) = inf{rIR𝖕 (𝖕M) : 𝖕 ∈ Spec(R)} ≥ inf{aIR𝖕 (𝖕M) : 𝖕 ∈ Spec(R)}, ii) inf{i ∈ ℕ0 : HIi (M) is not minimax} = inf{rIR𝖕 (𝖕M) : 𝖕 ∈ Spec(R) ∖ {𝔪}}. Also, we define the upper representation dimension RI (M) of M relative to I by RI (M) = sup{i ∈ ℕ0 : HIi (M) is not representable}, and we will show that i) sup{i ∈ ℕ0 : HIi (M) ≠ 0} = sup{i ∈ ℕ0 : HIi (M) is not artinian} = sup{RIR𝖕 (𝖕M) : 𝖕 ∈ Spec(R)}, ii) sup{i ∈ ℕ0 : HIi (M) is not finitely generated} = sup{i ∈ ℕ0 : HIi (M) is not minimax} = sup{RIR𝖕 (𝖕M) : 𝖕 ∈ Spec(R) ∖ {𝔪}}.

Hydroxide ion Conduction Mechanism in Mg-Al CO32- Layered Double Hydroxide

  • Kubo, Daiju;Tadanaga, Kiyoharu;Hayashi, Akitoshi;Tatsumisago, Masahiro
    • Journal of Electrochemical Science and Technology
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    • 제12권2호
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    • pp.230-236
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    • 2021
  • Ionic conduction mechanism of Mg-Al layered double hydroxides (LDHs) intercalated with CO32- (Mg-Al CO32- LDH) was studied. The electromotive force for the water vapor concentration cell using Mg-Al CO32- LDH as electrolyte showed water vapor partial pressure dependence and obeyed the Nernst equation, indicating that the hydroxide ion transport number of Mg-Al CO32- LDH is almost unity. The ionic conductivity of Mg(OH)2, MgCO3 and Al2(CO3)3 was also examined. Only Al2(CO3)3 showed high hydroxide ion conductivity of the order of 10-4 S cm-1 under 80% relative humidity, suggesting that Al2(CO3)3 is an ion conducting material and related to the generation of carrier by interaction with water. To discuss the ionic conduction mechanism, Mg-Al CO32- LDH having deuterium water as interlayer water (Mg-Al CO32- LDH(D2O)) was prepared. After the adsorbed water molecules on the surface of Mg-Al CO32- LDH(D2O) were removed by drying, DC polarization test for dried Mg-Al CO32- LDH(D2O) was examined. The absorbance attributed to O-D-stretching band for Mg-Al CO32- LDH(D2O) powder at around the positively charged electrode is larger than that before polarization, indicating that the interlayer in Mg-Al CO32- LDH is a hydroxide ion conduction channel.

3D NAND Flash Memory의 Remnant Polarization(Pr)과 Saturated Polarization(Ps)에 따른 Retention 특성 분석 (The Analysis of Retention Characteristic according to Remnant Polarization(Pr) and Saturated Polarization(Ps) in 3D NAND Flash Memory)

  • 이재우;강명곤
    • 전기전자학회논문지
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    • 제26권2호
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    • pp.329-332
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    • 2022
  • 본 논문에서는 ferroelectric(HfO2)구조가 적용된 3D NAND flash memory의 parameter에 따른 lateral charge migration의 retention과 Vth를 분석하였다. Ps가 클수록 Program 시 ferroelectric에서 가능한 최대 polarization이 크기 때문에 초기 Vth는 Ps 25µC/cm2 보다 Ps 70µC/cm2에서 약 1.04V차이로 커진다. 또한 Program 이후 trap된 전자는 시간이 지남에 따라서 lateral charge migration이 발생한다. Program 이후 gate에 전압을 가하지 않고 ferroelectric은 polarization을 유지하기 때문에 Ps와 크게 관계없이 Pr이 클수록 polarization이 커지고 lateral charge migration에 의한 ∆Vth는 Pr 5µC/cm2 보다 Pr 50µC/cm2에서 약 1.54V차이로 작아진다.

Characterization and thermophysical properties of Zr0.8Nd0.2O1.9-MgO composite

  • Nandi, Chiranjit;Kaity, Santu;Jain, Dheeraj;Grover, V.;Prakash, Amrit;Behere, P.G.
    • Nuclear Engineering and Technology
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    • 제53권2호
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    • pp.603-610
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    • 2021
  • The major drawback of zirconia-based materials, in view of their applications as targets for minor actinide transmutation, is their poor thermal conductivity. The addition of MgO, which has high thermal conductivity, to zirconia-based materials is expected to improve their thermal conductivity. On these grounds, the present study aims at phase characterization and thermophysical property evaluation of neodymium-substituted zirconia (Zr0.8Nd0.2O1.9; using Nd2O3 as a surrogate for Am2O3) and its composites with MgO. The composite was prepared by a solid-state reaction of Zr0.8Nd0.2O1.9 (synthesized by gel combustion) and commercial MgO powders at 1773 K. Phase characterization was carried out by X-ray diffraction and the microstructural investigation was performed using a scanning electron microscope equipped with energy dispersive spectroscopy. The linear thermal expansion coefficient of Zr0.8Nd0.2O1.9 increases upon composite formation with MgO, which is attributed to a higher thermal expansivity of MgO. Similarly, specific heat also increases with the addition of MgO to Zr0.8Nd0.2O1.9. Thermal conductivity was calculated from measured thermal diffusivity, temperature-dependent density and specific heat values. Thermal conductivity of Zr0.8Nd0.2O1.9-MgO (50 wt%) composite is more than that of typical UO2 fuel, supporting the potential of Zr0.8Nd0.2O1.9-MgO composites as target materials for minor actinides transmutation.

Highly sensitive xylene sensors using Fe2O3-ZnFe2O4 composite spheres

  • Chan, Jin Fang;Jeon, Jae Kyoung;Moon, Young Kook;Lee, Jong-Heun
    • 센서학회지
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    • 제30권4호
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    • pp.191-195
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    • 2021
  • Pure ZnFe2O4 and Fe2O3-ZnFe2O4 hetero-composite spheres were prepared by ultrasonic spray pyrolysis of a solution containing Zn- and Fe-nitrates. Additionally, the sensing characteristics of these spheres in the presence of 5 ppm ethanol, benzene, p-xylene, toluene, and CO (within the temperature range of 275-350 ℃) were investigated. The Fe2O3-ZnFe2O4 hetero-composite sensor with a cation ratio of [Zn]:[Fe]=1:3 exhibited a high response (resistance ratio = 140.2) and selectivity (response to p-xylene/response to ethanol = 3.4) to 5 ppm p-xylene at 300 ℃, whereas the pure ZnFe2O4 sensor showed a comparatively lower gas response and selectivity. The reasons for the superior response and selectivity to p-xylene in Fe2O3-ZnFe2O4 hetero-composite sensor were discussed in relation to the electronic sensitization due to charge transfer at Fe2O3-ZnFe2O4 interface and Fe2O3-induced catalytic promotion of gas sensing reaction. The sensor can be used to monitor harmful volatile organic compounds and indoor air pollutants.