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http://dx.doi.org/10.7471/ikeee.2022.26.2.329

The Analysis of Retention Characteristic according to Remnant Polarization(Pr) and Saturated Polarization(Ps) in 3D NAND Flash Memory  

Lee, Jaewoo (Dept. of Electronics Engineering, Korea National University of Transportation)
Kang, Myounggon (Dept. of Electronics Engineering, Korea National University of Transportation)
Publication Information
Journal of IKEEE / v.26, no.2, 2022 , pp. 329-332 More about this Journal
Abstract
In this paper, retention characteristics of lateral charge migration according to parameters of 3D NAND flash memory to which ferroelectric (HfO2) structure is applied and ∆Vth were analyzed. The larger the Ps, the greater maximum polarization possible in ferroelectric during Programming. Therefore, the initial Vth increases by about 1.04V difference at Ps 70µC/cm2 than at Ps 25µC/cm2. Also, electrons trapped after the Program operation causes lateral charge migration over time. Since ferroelectric maintains polarization without applying voltage to the gate after Programming, regardless of Ps value, polarization increases as Pr increases and the ∆Vth due to lateral charge migration becomes smaller by about 1.54V difference at Pr 50µC/cm2 than Pr 5µC/cm2.
Keywords
3D NAND flash memory; lateral charge migration; ferroelectric; polarization; threshold voltage;
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Times Cited By KSCI : 1  (Citation Analysis)
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