• 전기전자학회논문지
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• 제3권1호
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• pp.39-49
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• 1999

This paper describes a 1 GHz, low-phase-noise CMOS fractional-N frequency synthesizer with an integrated LC VCO. The proposed frequency synthesizer, which uses a high-order delta-sigma modulator to suppress the fractional spurious tones at all multiples of the fractional frequency resolution offset, has 64 programmable frequency channels with frequency resolution of $f_ref/64$. The measured phase noise is as low as -110 dBc/Hz at a 200 KHz offset frequency from a carrier frequency of 980 MHz. The reference sideband spurs are -73.5 dBc. The prototype is implemented in a $0.5{\mu}m$ CMOS process with triple metal layers. The active chip area is about $4mm^2$ and the prototype consumes 43 mW, including the VCO buffer power consumption, from a 3.3 V supply voltage.

• 대한전기학회논문지:시스템및제어부문D
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• 제53권9호
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• pp.650-656
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• 2004

This paper presents block and timing diagrams of the DWA(data weighted averaging) to optimize a feedback time delay of the sigma-delta modulator. Through the Matlab modeling, the optimized coefficients of the integrators are obtained to design the modulator. And then the fully differential SC integrators, feedback DAC, 9-level quantizer, and DWA are designed by considering the nonideal characteristics of the modulator. The designed second-order multibit modulator is fabricated in a 0.35$\mu\textrm{m}$ CMOS process. The designed modulator achieves 73dB signal-to-noise ratio and 72dB dynamic range at 1.2Vp-p 585kHz input singal and 52.8MHz sampling frequency.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제50권10호
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• pp.513-519
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• 2001

This paper proposed a random sigma-delta modulator(RSDM), which is constructed by a 1st order sigma-delta modulator(SDM) and a simple structured random binary generator(RBG). The 1st order SDM produces a switching pulse waveform which has the same low-frequency component as the reference input, while the RBG spreads the distribution of the number of sampling per switching cycle, and thus disperses the spectrum spikes in the output. The relationship between the harmonic spectra and the number of sampling per switching cycle is studied through computer simulations, and the frequency spectra of the RSDM are confirmed in an experimental setup.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 B
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• pp.1321-1323
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• 2000

Sigma-delta modulation can perform A/D conversion with a high-resolution. It is useful for simplifing the system and spreading out inband signal noise. When the sigma-delta modulation is applied to a switching converter, it can suppress the harmonic frequencies of output signal and be realized with a simple structure. In this paper, some methods of sigma-delta modulation are discussed so as to find the suitable structure for a switching converter. Noise characteristics are calculated and analyzed through simulations.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권2호
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• pp.170-183
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• 2013

This paper gives an overview of fractional-N phase-locked loops (PLLs) with practical design perspectives focusing on a ${\Delta}{\Sigma}$ modulation technique and a finite-impulse response (FIR) filtering method. Spur generation and nonlinearity issues in the ${\Delta}{\Sigma}$ fractional-N PLLs are discussed with simulation and hardware results. High-order ${\Delta}{\Sigma}$ modulation with FIR-embedded filtering is considered for low noise frequency generation. Also, various architectures of finite-modulo fractional-N PLLs are reviewed for alternative low cost design, and the FIR filtering technique is shown to be useful for spur reduction in the finite-modulo fractional-N PLL design.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 학술회의 논문집 정보 및 제어부문 B
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• pp.361-364
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• 2003

In this paper, a high-resolution multibit sigma-delta modulator implemented in a.0.35-um CMOS technology is introduced. This modulator consists of two switched capacitor integrators, 3-bits A/D converter, and 3-bits D/A converter For the verification of the internal function blocks, HSPICE simulator is used. This circuit is normally operated at 130 MHz clock and the total power dissapation is 70 mW.

• 대한수학회지
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• 제53권4호
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• pp.929-967
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• 2016

Let p(t, x) be the fundamental solution to the problem $${\partial}^{\alpha}_tu=-(-{\Delta})^{\beta}u,\;{\alpha}{\in}(0,2),\;{\beta}{\in}(0,{\infty})$$. If ${\alpha},{\beta}{\in}(0,1)$, then the kernel p(t, x) becomes the transition density of a Levy process delayed by an inverse subordinator. In this paper we provide the asymptotic behaviors and sharp upper bounds of p(t, x) and its space and time fractional derivatives $$D^n_x(-{\Delta}_x)^{\gamma}D^{\sigma}_tI^{\delta}_tp(t,x),\;{\forall}n{\in}{\mathbb{Z}}_+,\;{\gamma}{\in}[0,{\beta}],\;{\sigma},{\delta}{\in}[0,{\infty})$$, where $D^n_x$ x is a partial derivative of order n with respect to x, $(-{\Delta}_x)^{\gamma}$ is a fractional Laplace operator and $D^{\sigma}_t$ and $I^{\delta}_t$ are Riemann-Liouville fractional derivative and integral respectively.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 1996년도 추계학술대회논문집
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• pp.29-37
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• 1996

A ductile fracture criterion, which has already proposed, namely, ($\Delta$1/1o)f at $\Delta$$\sigma$ m=(($\Delta$1/1o)f+(-1/tan$\theta$)$\Delta$$\sigma$m(where ($\Delta$1/1o)f is fracture elongation, $\Delta$$\sigma$m is mean stress variation) was made use of to study the working limit in axisymmetric extrusion. The present investigation is concerned with the application of theory on flow and fracture to the prediction of workability of materials in axisymmetric bar extrusion, with special reference to central bursting. The influenced of die geometry and manufacturing conditions on the central bursting are predicted.

• 대한전자공학회논문지SD
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• 제44권8호
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• pp.65-73
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• 2007

본 논문에서는 UMTS용 수신기를 위한 저 전력 CMOS 연속-시간 시그마-델타 모듈레이터에 대해 논한다. 저 전력 동작수행을 위한 연속 시간 모듈레이터의 루프 필터는 선형성이 우수하고, 튜닝 회로가 비교적 간단한 active-RC 필터로 구성하였다. 본 모듈레이터의 구조는 전력 효율을 높이기 위해 24의 OSR (Oversampling Ratio)의 3차 4비트 단일 루프로 구성하였고, 초과 루프 지연 시간에 의한 성능 저하를 방지하기 위해 반주기 지연 제환 경로를 추가하였다. 제작한 회로의 SNR, SNDR, Dynamic range는 각각 71dB, 65dB, 74dB로 측정되었다. 설계한 연속-시간 시그마-델타 모듈레이터는 0.18-um CMOS 표준공정으로 제작하였고, 1.8V의 단일 전원 전압에서 15mW의 전력을 소모한다.

• 전기전자학회논문지
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• 제18권1호
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• pp.119-127
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• 2014

본 논문에서는 MEMS(Micro Electro Mechanical System) 가속도센서를 위한 CMOS readout 회로를 설계하였다. 설계된 CMOS readout 회로는 MEMS 가속도 센서, 커패시턴스-전압 변환기(CVC), 그리고 2차 스위치드 커패시터 ${\Sigma}{\Delta}$ 변조기로 구성된다. 이들 회로에는 저주파 잡음과 오프셋을 감소시키기 위한 correlated-double-sampling(CDS)와 chopper-stabilization(CHS) 기법이 적용되었다. 설계 결과 CVC는 150mV/g의 민감도와 0.15%의 비선형성을 갖는다. 설계된 ${\Sigma}{\Delta}$ 변조기는 입력전압 진폭이 100mV가 증가할 때, 출력의 듀티 싸이클은 10%씩 증가하며, 0.45%의 비선형성을 갖는다. 전체 회로의 민감도는 150mV/g이며, 전력소모는 5.6mW이다. 제안된 회로는 CMOS 0.35um 공정을 이용하여 설계하였고, 공급 전압은 3.3V이며, 동작 주파수는 2MHz이다. 설계된 칩의 크기는 PAD를 포함하여 $0.96mm{\times}0.85mm$이다.