• Journal of Digital Convergence
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• v.14 no.11
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• pp.357-367
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• 2016

In this study, we examined the impact on balance ability and jump performance of soccer players with functional ankle instability using virtual reality based neuromuscular posture control fusion training. Soccer players were divided into 15 people of virtual reality-based neuromuscular posture control fusion training group and 15 people of common treadmill training group and performed for 30 minutes three times a week for 8 weeks. In order to evaluate the balance of ability, using biorescue, it measured surface area, whole path length, limit of stability. In order to measure jump performance, it measured counter movement jump with arm swing and standing long jump. The results showed the statistically significant difference in the balance comparison of surface area, whole path length, limited of stability and the jump performance comparison of counter movement jump with arm swing, standing long jump. As a result, virtual reality-based neuromuscular posture control fusion training was found to be more effective to improve its balance ability and jump performance than common treadmill training.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.104-109
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• 2009

At a lower supply voltage, voltage-mode drivers draw less current than current-mode drivers. In this paper, we newly propose a voltage-mode driver with an additional current path that reduces the output voltage swing without the need for complicated additional circuitry, compared to conventional voltage-mode drivers. The prototype driver is fabriccated in a 0.13-$^{\mu}m$ CMOS technology and used to transmit data streams at the rate of 2.5 Gb/s. Deemphasis is also implemented for the compensation of channel attenuation. With a 1.2-V supply, it dissipates 8.0 mA for a 400-mV output voltage swing.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.704-707
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• 2013

This paper has analyzed the subthreshold swings for top and bottom gate voltages of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates. The subthreshold swing, therefore, has to be analyze not only for top gate voltage, but also for bottom gate voltage. In the pursuit of this purpose, Poisson equation has been solved to obtain the analytical solution of potential distribution with Gaussian function, and the subthreshold swing model has been presented. As a result to observe the subthreshold swings for the change of top and bottom gate voltage using this subthreshold swing model, we know the subthreshold swings are greatly changed for gate voltages. Especially we know the conduction path has been changed for top and bottom gate voltage and this is expected to greatly influence on subthreshold swings.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.657-662
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• 2014

This paper has analyzed the subthreshold swings for top and bottom gate voltages of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates. The subthreshold swing, therefore, has to be analyze not only for top gate voltage, but also for bottom gate voltage. In the pursuit of this purpose, Poisson equation has been solved to obtain the analytical solution of potential distribution with Gaussian function, and the subthreshold swing model has been presented. As a result to observe the subthreshold swings for the change of top and bottom gate voltage using this subthreshold swing model, we know the subthreshold swings are greatly changed for gate voltages. Especially we know the conduction path has been changed for top and bottom gate voltage and this is expected to greatly influence on subthreshold swings.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.4
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• pp.49-58
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• 2014

A low-swing differential near-ground signaling (NGS) transceiver for low-power high-speed mobile I/O interface is presented. The proposed transmitter adopts an on-chip regulated programmable-swing voltage-mode driver and a pre-driver with asymmetric rising/falling time. The proposed receiver utilizes a new multiple gain-path differential amplifier with feed-forward capacitors that boost high-frequency gain. Also, the receiver incorporates a new adaptive bias generator to compensate the input common-mode variation due to the variable output swing of the transmitter and to minimize the current mismatch of the receiver's input stage amplifier. The use of the new simple and effective impedance matching techniques applied in the transmitter and receiver results in good signal integrity and high power efficiency. The proposed transceiver designed in a 65-nm CMOS technology achieves a data rate of 13 Gbps/channel and 0.3 pJ/bit (= 0.3 mW/Gbps) high power efficiency over a 10 cm FR4 printed circuit board.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.861-864
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• 2006

In this paper conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to obtain the analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper is compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gateoxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according to channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.3
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• pp.541-546
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• 2008

In this paper, conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper are compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gate oxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according doping concentration.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.92-97
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• 2008

In this Paper, we present a scaling theory for dual material surrounding gate (DMSGTs) MOSFETs, which gives a guidance for the device design and maintaining a precise subthreshold factor for given device parameters. By studying the subthreshold conducting phenomenon of DMSGTs, the effective conductive path effect (ECPE) is employed to acquire the natural length to guide the design. With ECPE, the minimum channel potential is used to monitor the subthreshold behavior. The effect of ECPE on scaling factor significantly improves the subthreshold swing compared to conventional scaling rule. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.3
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• pp.575-580
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• 2015

Asymmetric double gate(DG) MOSFET is a novel transistor to be able to reduce the short channel effects. This paper has analyzed a off current for conduction path of asymmetric DGMOSFET. The conduction path is a average distance from top gate the movement of carrier in channel happens, and a factor to change for oxide thickness of asymmetric DGMOSFET to be able to fabricate differently top and bottom gate oxide thickness, and influenced on off current for top gate voltage. As the conduction path is obtained and off current is calculated for top gate voltage, it is analyzed how conduction path influences on off current with parameters of oxide thickness and channel length. The analytical potential distribution of series form is derived from Poisson's equation to obtain off current. As a result, off current is greatly changed for conduction path, and we know threshold voltage and subthreshold swing are changed for this reasons.

• The Journal of Korean Academy of Prosthodontics
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• v.28 no.2
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• pp.217-229
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• 1990

The Applegate-Kennedy classification, the drawing of removable partial denture design using color coding, the selective tissue placement impression method in case of Class I and Class II removable partial dentures, the design of the swing lock attachment of an alternative approach to conventional removable partial denture, the design of the intracoronal or extracoronal attachment, and the removable partial denture design using a rotational path were presented. The following conclusions from the above things were presented : 1. The swing lock attachment removable partial denture can be effective to an alternative approach when the design of conventional removable partial denture is improper with markedly mobile remaining teeth or missing key abutments. 2. Intracoronal or extracoronal attachments must be selected care-fully considering the conditions of the abutment teeth and alveolar ridge whether more occlusal loads to the abutment teeth or to the alveolar ridge are distributed. 3. It must be almost prerequisite that a functional impression is taken in case of Class I and class II removable partial dentures and in case of tooth-borne removable partial dentures, a removable partial denture using rotational path is strong, hygienic, esthetic, and can be accomplished successfully in the clinical aspect when it is properly designed and fabricated through the complete understanding of an indication and a principle. 4. All necessary informations must be achieved with carefully investigated surveying procedure according to each clinical case by Applegate-Kennedy classification which can be helpful and useful in the clinical application and it is important that dentists themselves must be in the habit of drawing a reasonable partial denture design using a color coding in the paper sheet.