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http://dx.doi.org/10.6109/jkiice.2008.12.3.541

Parameter dependent conduction path for nano structure double gate MOSFET  

Jung, Hak-Kee (군산대학교 전자정보공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.12, no.3, 2008 , pp. 541-546 More about this Journal
Abstract
In this paper, conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper are compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gate oxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according doping concentration.
Keywords
이중게이트 MOSFET;포아슨방정식;서브문턱스윙;전도중심;
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