• Journal of the Korean Society for Heat Treatment
• /
• v.24 no.6
• /
• pp.307-310
• /
• 2011

We have investigated the structural, electrical and optical properties of $In_2O_3$ thin films deposited by RF magnetron sputtering and then annealed at $150^{\circ}C$ and $300^{\circ}C$ in vacuum. The structural and electrical properties are strongly related to annealing temperature. All the annealed $In_2O_3$ films are grown as a hexagonal wurtzite phase and the largest grain size is observed in the films annealed at $300^{\circ}C$. The sheet resistance decreases with a increase in annealing temperature and $In_2O_3$ film annealed at $300^{\circ}C$ shows the lowest sheet resistance of $174{\Omega}/{\Box}$. The optical transmittance of $In_2O_3$ films in a visible wavelength region also depends on the annealing temperature. The films annealed at $300^{\circ}C$ show higher transmittance of 76% than those of the films prepared in this study.

• Journal of the Korean Society for Heat Treatment
• /
• v.24 no.6
• /
• pp.338-342
• /
• 2011

Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on glass substrate and then the effect of post deposition annealing at nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes at different temperature of 150, 300 and $450^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $450^{\circ}C$ have the highest optoelectrical performance in this study.

• Journal of Magnetics
• /
• v.5 no.4
• /
• pp.120-123
• /
• 2000

Co-Ni-Fe-N thin films were fabricated by a $N_2$ reactive rf magnetron sputtering method. The nitrogen partial pressure ($P_{N2}$) was varied in the range 0~10% . As$P_{N2}$ increases in this range, the saturation magnetization $B_s$ linearly decreases from 19.8 kG to 14 kG and the electrical resistivity ($\rho$) increases from 27 to 155 $\mu\Omegacm$. The coercivity $H_c$ exhibits the minimum value at 4% $P_{N2}$. The magnetic anisotropy fields ($H_k$) are in the range of 20$\sim$50 Oe. High frequency characteristics of $(Co_{22.2}Ni_{27.6}Fe_{50.2})_{100-x}N_x$ films are excellent in the range of 3$\sim$5% of $P_{N2}$. In particular, the effective permeability of the film fabricated at 4% $P_{N2}$ is 800, which is maintained up to 600 MHz. This film also shows Bs of 17.5 kG, $H_c$/ of 1.4 Oe, resistivity of 98$\mu\Omegacm$ and $H_k$ of about 25 Oe. Also, the corrosion resistance of $(Co_{22.2}Ni_{27.6}Fe_{50.2})_{100-x}N_x$ films was imp roved with increasing N concentration.

• Journal of the Korean institute of surface engineering
• /
• v.54 no.6
• /
• pp.302-306
• /
• 2021

SnO₂ 30/Ag 15/SnO₂ 30 nm(SAS) tri-layer films were deposited on the glass substrates with RF and DC magnetron sputtering and then electron beam is irradiated on the surface to investigate the effect of electron bombardment on the opto-electrical performance of the films. electron beam irradiated tri-layer films at 1000 eV show a higher figure of merit of 2.72×10^-3 Ω^-1 than the as deposited films due to a high visible light transmittance of 72.1% and a low sheet resistance of 14.0 Ω/☐, respectively. From the observed results, it is concluded that the post-deposition electron irradiated SnO₂ 30/Ag 15/SnO₂ 30 nm tri-layer films can be used as a substitute for conventional transparent conducting oxide films in various opto-electrical applications.

• Korean Journal of Metals and Materials
• /
• v.47 no.1
• /
• pp.44-49
• /
• 2009

Indium tin oxide(ITO) thin films were deposited on the glass substrates by radio-frequency (RF) magnetron sputtering method. The influence of rapid thermal annealing (RTA) treatment on the optical and electrical properties of the films were investigated for the purpose of fabricating plasma display signboard. Structural properties, surface roughness, sheet resistance and transmittance of the ITO film were analysed by using x-ray diffraction method, atomic force microscopy (AFM), four point prove, and ultraviolet-visible spectrometer, respectively. It was found that the RTA treatment increased the transmittance and decreased the resistivity of the ITO film, respectively. Furthermore, we successfully demonstrated the direct-current plasma signboard by using ITO electrode and phosphors.

• Journal of the Korean institute of surface engineering
• /
• v.54 no.3
• /
• pp.119-123
• /
• 2021

SnO₂ single layer and SnO₂/Ag/SnO₂ (SAS) tri-layered films were deposited on the glass substrate by RF and DC magnetron sputtering at room temperature and then the effect of Ag interlayer on the opto-electrical performance of the films were considered. As deposited SnO₂ films show a visible transmittance of 85.5 % and a sheet resistance of 1.2×10⁴ Ω/□, the SAS films with a 15 nm thick Ag interlayer show a lower resistance of 18.8 Ω/□ and a visible transmittance of 70.6 %, respectively. The figure of merit based on the optical transmittance and sheet resistance revealed that the Ag interlayer in the SnO₂ films enhances the opto-electrical performance without substrate heating or annealing process.

• Journal of the Korean institute of surface engineering
• /
• v.55 no.2
• /
• pp.91-95
• /
• 2022

ZnO single layer (60 nm thick) and ZnO with Ag interlayer (ZnO/Ag/ZnO; ZAZ) films were deposited on the glass substrates by using radio frequency (RF) and direct current (DC) magnetron sputter to evaluate the effectiveness of Ag interlayer on the optical visible transmittance and the conductivity of the films. In the ZAZ films, the thickness of ZnO layers was kept at 30 nm, while the Ag thickness was varied as 5, 10, 15 and 20 nm. In X-ray diffraction (XRD) analysis, ZnO films show the (002) diffraction peak and ZAZ films also show the weak ZnO (002) peak and Ag (111) diffraction peak. As a thickness of Ag interlayer increased to 20 nm, the grain size of the Ag films enlarged to 11.42 nm and the optical band gap also increased from 4.15 to 4.22 eV with carrier concentration increasing from 4.9 to 10.5×10²¹ cm^-3. In figure of merit measurements, the ZAZ films with a 10 nm thick Ag interlayer showed the higher figure of merit of 4.0×10^-3 Ω^-1 than the ZnO single layer and another ZAZ films. From the experimental result, it is assumed that the Ag interlayer enhanced effectively the opto-electrical performance of the ZAZ films.

• Journal of Sensor Science and Technology
• /
• v.30 no.6
• /
• pp.446-450
• /
• 2021

Non-dispersive infrared (NDIR) gas sensors typically use an optical filter that transmits a discriminating 4.26 ㎛ wavelength band to measure carbon dioxide (CO2), as CO2 absorbs 4.26 ㎛ infrared. The filter performance depends on the transmittance and full width at half maximum (FWHM). This paper presents the fabrication, sensitivity, and selectivity characteristics of a distributed Bragg reflector (DBR)-based Fabry-Perot filter with a simple structure for CO2 detection. Each Ge and SiO2 films were prepared using the RF magnetron sputtering technique. The transmittance characteristics were measured using Fourier-transform infrared spectroscopy (FT-IR). The fabricated filter had a peak transmittance of 59.1% at 4.26 ㎛ and a FWHM of 158 nm. In addition, sensitivity and selectivity experiments were conducted by mounting the sapphire substrate and the fabricated filter on an NDIR CO2 sensor measurement system. When measuring the sensitivity, the concentration of CO2 was observed in the range of 0-10000 ppm, and the selectivity was measured for environmental gases of 1000 ppm. The fabricated filter showed lower sensitivity to CO2 but showed higher selectivity with other gases.

• Journal of the Semiconductor & Display Technology
• /
• v.21 no.4
• /
• pp.138-143
• /
• 2022

We analyzed the influence of post-annealing on Ga₂O₃/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga₂O₃) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga₂O₃ and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O₂-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga₂O₃ film. The O₂-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

• Journal of Sensor Science and Technology
• /
• v.30 no.4
• /
• pp.250-254
• /
• 2021

A highly sensitive and selective non-dispersive infrared (NDIR) carbon dioxide gas sensor requires achieving high transmittance and narrow full width at half maximum (FWHM), which depends on the interface of the optical filter for precise measurement of carbon dioxide concentration. This paper presents the design, simulation, and fabrication of a Fabry-Perot filter based on a distributed Bragg reflector (DBR) for a low-cost NDIR carbon dioxide sensor. The Fabry-Perot filter consists of upper and lower DBR pairs, which comprise multilayered stacks of alternating high- and low-index thin films, and a cavity layer for the resonance of incident light. As the number of DBR pairs inside the reflector increases, the FWHM of the transmitted light becomes narrower, but the transmittance of light decreases substantially. Therefore, it is essential to analyze the relationship between the FWHM and transmittance according to the number of DBR pairs. The DBR is made of silicon and silicon dioxide by RF magnetron sputtering on a glass wafer. After the optimal conditions based on simulation results were realized, the DBR exhibited a light transmittance of 38.5% at 4.26 ㎛ and an FWHM of 158 nm. The improved results substantiate the advantages of the low-cost and minimized process compared to expensive commercial filters.