Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Influence of Oxygen Annealing on Temperature Dependent Electrical Characteristics of Ga2O3/4H-SiC Heterojunction Diodes

산소 후열처리가 Ga2O3/4H-SiC 이종접합 다이오드의 온도에 따른 전기적 특성에 미치는 영향 분석

  • Chung, Seung Hwan (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Lee, Hyung Jin (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Lee, Hee Jae (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Byun, Dong Wook (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Koo, Sang Mo (Department of Electronic Materials Engineering, Kwangwoon University)
  • 정승환 (광운대학교 전자재료공학과) ;
  • 이형진 (광운대학교 전자재료공학과) ;
  • 이희재 (광운대학교 전자재료공학과) ;
  • 변동욱 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Received : 2022.12.12
  • Accepted : 2022.12.20
  • Published : 2022.12.31
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Abstract

We analyzed the influence of post-annealing on Ga2O3/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga2O3) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga2O3 and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O2-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga2O3 film. The O2-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

Keywords

Acknowledgement

This work was supported by the Technology Innovation Program Development of 1.2kV low-loss Gallium Oxide transistor (RS-2022-00144027) funded By the Ministry of Trade, Industry & Energy(MOTIE, Korea), Korea Institute for Advancement of Technology(KIAT) grant funded by the Korea Government(MOTIE) (P0012451) and has been conducted by the Research Grant of Kwangwoon University in 2022.

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