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Influence of Oxygen Annealing on Temperature Dependent Electrical Characteristics of Ga2O3/4H-SiC Heterojunction Diodes  

Chung, Seung Hwan (Department of Electronic Materials Engineering, Kwangwoon University)
Lee, Hyung Jin (Department of Electronic Materials Engineering, Kwangwoon University)
Lee, Hee Jae (Department of Electronic Materials Engineering, Kwangwoon University)
Byun, Dong Wook (Department of Electronic Materials Engineering, Kwangwoon University)
Koo, Sang Mo (Department of Electronic Materials Engineering, Kwangwoon University)
Publication Information
Journal of the Semiconductor & Display Technology / v.21, no.4, 2022 , pp. 138-143 More about this Journal
Abstract
We analyzed the influence of post-annealing on Ga2O3/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga2O3) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga2O3 and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O2-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga2O3 film. The O2-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.
Keywords
Gallium oxide; Silicon carbide; Oxygen annealing; Hetero junction diode;
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