Browse > Article
http://dx.doi.org/10.5695/JKISE.2021.54.3.119

Influence of Ag Interlayer on the Optical and Electrical Properties of SnO2 Thin Films  

Jang, Jin-Kyu (School of Materials Science and Engineering, University of Ulsan)
Kim, Hyun-Jin (School of Materials Science and Engineering, University of Ulsan)
Choi, Jae-Wook (School of Materials Science and Engineering, University of Ulsan)
Lee, Yeon-Hak (School of Materials Science and Engineering, University of Ulsan)
Heo, Sung-Bo (Korea Institute of Industrial Technology)
Kim, Yu-Sung (Korea Institute of Industrial Technology)
Kong, Young-Min (School of Materials Science and Engineering, University of Ulsan)
Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
Publication Information
Journal of Surface Science and Engineering / v.54, no.3, 2021 , pp. 119-123 More about this Journal
Abstract
SnO2 single layer and SnO2/Ag/SnO2 (SAS) tri-layered films were deposited on the glass substrate by RF and DC magnetron sputtering at room temperature and then the effect of Ag interlayer on the opto-electrical performance of the films were considered. As deposited SnO2 films show a visible transmittance of 85.5 % and a sheet resistance of 1.2×104 Ω/□, the SAS films with a 15 nm thick Ag interlayer show a lower resistance of 18.8 Ω/□ and a visible transmittance of 70.6 %, respectively. The figure of merit based on the optical transmittance and sheet resistance revealed that the Ag interlayer in the SnO2 films enhances the opto-electrical performance without substrate heating or annealing process.
Keywords
$SnO_2$; Ag; Sheet resistance; XRD; AFM;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Y. J. Lee, D. S. Rub y, D. W. Peters, B. B. McKenzie, J. W. P. Hsu, ZnO Nanostructures as Efficient Antireflection Layers in Solar Cells, Nano Letters., 8 (2008) 1501-1505.   DOI
2 J. Tauc, Amorphous and liquid semiconductor, Plenum, New York (1974).
3 D. Kim, Low temperature deposition of ITO on organic films by using negative ion assisted dual magnetron sputtering system, vacuum., 81 (2006) 279-282.   DOI
4 T. K. Gong, S. B. Heo, D. Kim, Effect of postdeposition annealing on the structural, optical and electrical properties of ZTO/Ag/ZTO trilayered films, Ceram. Inter., 42 (2016) 12341-12344.   DOI
5 Y. J. Park, S. H. Choe, Y. S. Kim, B. C. Cha, Y. M. Gong, D. Kim, Influence of Au Interlayer Thickness on the Opto-Electrical Properties of ZnO Thin Films, . Korean Inst. Surf. Eng., 53 (2020) 104-108.
6 Y. S. Kim, J. H. Park, D. Kim, Influence of Au underlayer thickness on the electro-optical properties of ITO/Au layered films deposited by magnetron sputtering on unheated polycarbonate substrates, Vacuum., 82 (2008) 574-578.   DOI
7 J. H. Park, J. H. Chae, D. Kim, Influence of nickel thickness on the properties of ITO/Ni/ITO thin films, J. alloys compd., 478 (2009) 330-333.   DOI
8 G. Haacke, New figure of merit for transparent conductors, J. Appl. Phys., 47 (1976) 4086-4089.   DOI
9 Y. H. Song, T. Y. Eom, S. B. Heo, D. Kim, Effect of Post-deposition Rapid Thermal Annealing on the Electrical and Optical Properties of ZTO/Ag/ZTO Tri-layer Thin Films, J. Korean. Soc. Heat Treat. 30 (2017) 151-154.   DOI
10 S. Peng, T. Yao, Y. Yang, K. Zhang, J. Jiang, K. Jin, G. Li, X. Cao, G. Xu, Y. Wang, Influences of the RF power ratio on the optical and electrical properties of GZO thin films by DC copled RF magnetron sputtering at room temperature, Physica B., 503 (2016) 111-116.   DOI
11 S. Y. Lee, Y. S. Park, T. Y. Seong, Optimized ITO/Ag/ITO multilayers as a current spreading layer to enhance the light output of ultraviolet light-emitting diodes, J. alloys compd., 776 (2019) 960-964.   DOI
12 D. Kim, Improved electrical and optical properties of GZO films with a thin TiO2 buffer layer deposited by RF magnetron sputtering, Ceram. Inter., 40 (2014) 1457-1460.   DOI
13 M. B. Ali, A. Addad, S. M. Alshahrani, H. A. S. Al-Shamiri, B. Elgammal, H. Elhouichet, Processing and physical properties of nanomaterials based Zn-Sn-O elements at various annealing temperatures, Optik., 203 (2020) 164005.   DOI