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http://dx.doi.org/10.12656/jksht.2011.24.6.307

Effect of Annealing Temperature after Deposition on the Structural, Electrical and Optical Properties of In2O3 Films  

Lee, Y.J. (School of Materials Science and Engineering, University of Ulsan)
Lee, H.M. (School of Materials Science and Engineering, University of Ulsan)
Heo, S.B. (School of Materials Science and Engineering, University of Ulsan)
Kim, Y.S. (New Optics, R&D Team)
Chae, J.H. (New Optics, R&D Team)
Kong, Y.M. (School of Materials Science and Engineering, University of Ulsan)
Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
Publication Information
Journal of the Korean Society for Heat Treatment / v.24, no.6, 2011 , pp. 307-310 More about this Journal
Abstract
We have investigated the structural, electrical and optical properties of $In_2O_3$ thin films deposited by RF magnetron sputtering and then annealed at $150^{\circ}C$ and $300^{\circ}C$ in vacuum. The structural and electrical properties are strongly related to annealing temperature. All the annealed $In_2O_3$ films are grown as a hexagonal wurtzite phase and the largest grain size is observed in the films annealed at $300^{\circ}C$. The sheet resistance decreases with a increase in annealing temperature and $In_2O_3$ film annealed at $300^{\circ}C$ shows the lowest sheet resistance of $174{\Omega}/{\Box}$. The optical transmittance of $In_2O_3$ films in a visible wavelength region also depends on the annealing temperature. The films annealed at $300^{\circ}C$ show higher transmittance of 76% than those of the films prepared in this study.
Keywords
$In_2O_3$; Annealing; Optical transmittance; Sheet resistance; XRD;
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Times Cited By KSCI : 4  (Citation Analysis)
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