Journal of the Korean Society for Heat Treatment (열처리공학회지)

The Korean Society for Heat Treatment (한국열처리공학회)
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Effect of Annealing in Nitrogen Atmosphere on the Characteristics of Ga Doped ZnO Films

Ga doped ZnO 박막의 질소분위기 열처리에 따른 특성 변화

  • Heo, Sung-Bo (School of Materials Science and Engineering, University of Ulsan) ;
  • Lee, Young-Jin (School of Materials Science and Engineering, University of Ulsan) ;
  • Lee, Hak-Min (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Sun Kwang (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Yu Sung (R&D Division, New Optics LTD.) ;
  • Kong, Young Min (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Dae-Il (School of Materials Science and Engineering, University of Ulsan)
  • 허성보 (울산대학교 첨단소재공학부) ;
  • 이영진 (울산대학교 첨단소재공학부) ;
  • 이학민 (울산대학교 첨단소재공학부) ;
  • 김선광 (울산대학교 첨단소재공학부) ;
  • 김유성 (뉴옵틱스 기술연구소) ;
  • 공영민 (울산대학교 첨단소재공학부) ;
  • 김대일 (울산대학교 첨단소재공학부)
  • Received : 2011.10.12
  • Accepted : 2011.11.16
  • Published : 2011.11.30
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Abstract

Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on glass substrate and then the effect of post deposition annealing at nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes at different temperature of 150, 300 and $450^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $450^{\circ}C$ have the highest optoelectrical performance in this study.

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References

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