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http://dx.doi.org/10.12656/jksht.2011.24.6.338

Effect of Annealing in Nitrogen Atmosphere on the Characteristics of Ga Doped ZnO Films  

Heo, Sung-Bo (School of Materials Science and Engineering, University of Ulsan)
Lee, Young-Jin (School of Materials Science and Engineering, University of Ulsan)
Lee, Hak-Min (School of Materials Science and Engineering, University of Ulsan)
Kim, Sun Kwang (School of Materials Science and Engineering, University of Ulsan)
Kim, Yu Sung (R&D Division, New Optics LTD.)
Kong, Young Min (School of Materials Science and Engineering, University of Ulsan)
Kim, Dae-Il (School of Materials Science and Engineering, University of Ulsan)
Publication Information
Journal of the Korean Society for Heat Treatment / v.24, no.6, 2011 , pp. 338-342 More about this Journal
Abstract
Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on glass substrate and then the effect of post deposition annealing at nitrogen atmosphere on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes at different temperature of 150, 300 and $450^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $450^{\circ}C$ have the highest optoelectrical performance in this study.
Keywords
GZO; Nitrogen; Annealing; Resistivity; Optical transmittance;
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