• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2004년도 춘계종합학술대회
• /
• pp.682-684
• /
• 2004

Random Telegraph Signal(RTS)에 의한 1/f 잡음이 CMOS Ring Oscillator의 Phase Noise와 Jitter에 미치는 영향을 조사한다. 7단 Ring Oscillator의 각 노드에 병렬 연결된 10개의 Piece-Wise-Linear 전류원이 RTS 신호를 모델링 한다. RTS 전류원의 진폭과 Time Constant를 변화시키면서 Ring Oscillator 출력의 FFT 및 전력 스팩트럼 밀도, Jitter를 관찰한다. RTS 전류원의 진폭은 Phase Noise의 폭을 증가시키고 결과적으로 Jitter의 크기도 증가 시키는 것이 확인 되었다. 그리고 RTS Time Constant가 짧아질수록 출력 신호의 FFT peak의 폭이 커지고 Cycle to Cycle Jitter 값이 증가하였다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제16권2호
• /
• pp.185-190
• /
• 2016

A 70-${\AA}$ nanowire field-effect transistor (FET) for sub-10-nm CMOS technology is designed and simulated in order to investigate the impact of an oxide trap on random telegraph noise (RTN) in the device. It is observed that the drain current fluctuation (${\Delta}I_D/I_D$) increases up to a maximum of 78 % due to the single electron trapping. In addition, the effect of various trap positions on the RTN in the nanowire FET is thoroughly analyzed at various drain and gate voltages. As the drain voltage increases, the peak point for the ${\Delta}I_D/I_D$ shifts toward the source side. The distortion in the electron carrier density and the conduction band energy when the trap is filled with an electron at various positions in the device supports these results.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2003년도 추계종합학술대회
• /
• pp.606-609
• /
• 2003

MOSFET의 1/f 잡음은 개별 Random Telegraph Signal (RTS)의 중첩에 의해 생성되는 것으로 알려져 있다. 본 연구에서는 CMOS 링 발진기 노드 중 하나에 RTS 전류원을 병렬로 연결하여 1/f 잡음에 의한 jitter를 분석하였다. 링 발진기의 숫자, 전원 전압, 그리고 RTS 진폭에 따른 litter rate 변화를 시뮬레이션을 통하여 분석하였다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제14권4호
• /
• pp.365-375
• /
• 2014

This paper proposes an abnormal V-shaped-error-free non-blind deconvolution technique featuring an adaptively segmented forward-problem based iterative deconvolution (ASDCN) process. Unlike the algebraic based inverse operations, this eliminates any operations of differential and division by zero to successfully circumvent the issue on the abnormal V-shaped error. This effectiveness has been demonstrated for the first time with applying to a real analysis for the effects of the Random Telegraph Noise (RTN) and/or Random Dopant Fluctuation (RDF) on the overall SRAM margin variations. It has been shown that the proposed ASDCN technique can reduce its relative errors of RTN deconvolution by $10^{13}$ to $10^{15}$ fold, which are good enough for avoiding the abnormal ringing errors in the RTN deconvolution process. This enables to suppress the cdf error of the convolution of the RTN with the RDF (i.e., fail-bit-count error) to $1/10^{10}$ error for the conventional algorithm.

• IEIE Transactions on Smart Processing and Computing
• /
• 제2권4호
• /
• pp.216-225
• /
• 2013

This paper discusses the issues regarding an abnormal V-shaped error confronting algebraic-based deconvolution process. Deconvolution was applied to an analysis of the effects of the Random Telegraph Noise (RTN) and Random Dopant Fluctuation (RDF) on the overall SRAM margin variations. This paper proposes a technique to suppress the problematic phenomena in the algebraic-based RDF/RTN deconvolution process. The proposed technique can reduce its relative errors by $10^{10}$ to $10^{16}$ fold, which is a sufficient reduction for avoiding the abnormal ringing errors in the RTN deconvolution process. The proposed algebraic-based analyses allowed the following: (1) detection of the truncating point of the TD-MV distributions by the screening test, and (2) predicting the MV-shift-amount by the assisted circuit schemes needed to avoid the out of specs after shipment.

• 한국정보통신학회논문지
• /
• 제8권8호
• /
• pp.1713-1718
• /
• 2004

MOSFET의 1/f 잡음은 개별 Random Telegraph Signal(RTS)의 중첩에 의해 생성되는 것으로 알려져 있다. 본 연구는 CMOS 링발진기 노드에 병렬로 RTS 전류원을 연결하여 1/f 잡음에 의한 Jitter를 분석하였다. RTS의 진폭 변화에 따른 Jitter 및 Jitter Ratio의 변화를 조사하여 RTS 진폭과 Jitter 및 Jitter Ratio의 크기가 선형적으로 비례함을 밝혔고, 링발진기의 출력 FFT를 분석하여 Jitter의 원인이 높은 차수의 고주파 위상잡음에 있음을 밝혔다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제11권2호
• /
• pp.80-87
• /
• 2011

Low temperature hole transport characteristics of gate-all-around p-channel metal oxide semiconductor (PMOS) type silicon nanowire field-effect-transistors with the radius of 5 nm and lengths of 44-46 nm are presented. They show coexisting two single hole states randomly switching between each other. Analysis of Coulomb diamonds of these two switching states reveals a variety of electrostatic effects which is originated by the potential of a single hole captured in the trap near the nanowire.

• 한국진공학회지
• /
• 제21권3호
• /
• pp.151-157
• /
• 2012

GaAs/$Al_xGa_{1-x}As$ 이차원 전자계는 양자점, QPC (quantum point contact), 전자 간섭계 등 다양한 형태의 양자구조 제작에 널리 사용된다. 하지만 일반적으로 GaAs 기반 양자소자는 극저온에서 소자의 전도도가 시간에 따라 변하거나 두 가지의 전 상태 사이를 왔다 갔다 하는 random telegraph noise 때문에 소자의 동작 특성이 상당히 불안하다. 이러한 문제점을 해결하기 위하여 산소 플라즈마를 이용한 소자의 표면처리가 소자의 안정성에 미치는 영향을 연구하였다. 이를 통해 소자의 표면을 산소 플라즈마를 이용하여 50 W~120 W 사이의 출력으로 30 초간 처리한 후 HCl : $H_2O$ (1 : 3) 용액을 이용하여 10초간 습식식각한 경우 전도도의 안정성이 매우 향상됨을 알 수 있었다.

• 센서학회지
• /
• 제14권1호
• /
• pp.42-46
• /
• 2005

It has been known that 1/f noise of MOSFET is generated by superposition of random telelgraph signals (RTS). In this study, jitters and phase noise caused by 1/f noise of MOSFET are analysed with RTS supplied to all of the nodes of the CMOS ring oscillator under investigation. Through the analysis of jitters and jitter ratios with varying values of the amplitude of RTS, it is found that the jitters and the jitter ratios are proportional to the amplitude of RTS. And the analysis of FFT of the output of the ring oscillator reveals that the jitters are closely related to the phase noise of the high order harmonics of the ring oscillator outputs.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제6권1호
• /
• pp.38-42
• /
• 2006

We report 1/f noise PSD(Power Spectrum Density) of sub-100 nm MOSFETs as a function of various parameters such as HCS (Hot Carrier Stress), bias condition, temperature, device size and types of MOSFETs. The noise spectra of sub-100 nm devices showed Lorentzian-like noise spectra. We could check roughly the position of a dominant noise source by changing $V_{DS}$. With increasing measurement temperature, the 1/f noise PSD of 50 nm PMOS device decreases, but there is no decrease in the noise of NMOS device. RTN (Random Telegraph Noise) was measured from the device that shows clearly a Lorentzian-like noise spectrum in 1/f noise spectrum.