Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Jitter Analysis of CMOS Ring Oscillator Due to 1/f Noise of MOSFET

MOSFET의 1/f noise에 의한 CMOS Ring Oscillator의 Jitter 분석

  • 박세훈 (안동대학교 전자정보산업학부 전자공학전공)
  • Published : 2004.12.01
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Abstract

It has been known that 1/f noise of MOSFET is generated by the superposition of single random telelgraph signals (RTS). In this study, jitters caused by 1/f noise of MOSFET are analysed with RTS supplied to all of the nodes of the CMOS ring oscillator under investigation. Through the analysis of the variations of jitters and jitter ratios with varying values of the amplitude of RTS, it is found that the jitters and the jitter ratios are proportional to the amplitude of RTS. And the analysis of FFT of the outputs of the ring oscillator reveals that the jitters are closely related to the phase noise of the high order harmonics of the ring oscillator outputs.

MOSFET의 1/f 잡음은 개별 Random Telegraph Signal(RTS)의 중첩에 의해 생성되는 것으로 알려져 있다. 본 연구는 CMOS 링발진기 노드에 병렬로 RTS 전류원을 연결하여 1/f 잡음에 의한 Jitter를 분석하였다. RTS의 진폭 변화에 따른 Jitter 및 Jitter Ratio의 변화를 조사하여 RTS 진폭과 Jitter 및 Jitter Ratio의 크기가 선형적으로 비례함을 밝혔고, 링발진기의 출력 FFT를 분석하여 Jitter의 원인이 높은 차수의 고주파 위상잡음에 있음을 밝혔다.

Keywords

References

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