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http://dx.doi.org/10.5573/JSTS.2011.11.2.080

Co-existence of Random Telegraph Noise and Single-Hole-Tunneling State in Gate-All-Around PMOS Silicon Nanowire Field-Effect-Transistors  

Hong, Byoung-Hak (Dep. EE., Korea University)
Lee, Seong-Joo (Dep. EE., Korea University)
Hwang, Sung-Woo (Dep. EE., Korea University)
Cho, Keun-Hwi (Dep. EE., Korea University)
Yeo, Kyoung-Hwan (Dep. EE., Korea University)
Kim, Dong-Won (Dep. EE., Korea University)
Jin, Gyo-Young (Dep. EE., Korea University)
Park, Dong-Gun (Dep. EE., Korea University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.11, no.2, 2011 , pp. 80-87 More about this Journal
Abstract
Low temperature hole transport characteristics of gate-all-around p-channel metal oxide semiconductor (PMOS) type silicon nanowire field-effect-transistors with the radius of 5 nm and lengths of 44-46 nm are presented. They show coexisting two single hole states randomly switching between each other. Analysis of Coulomb diamonds of these two switching states reveals a variety of electrostatic effects which is originated by the potential of a single hole captured in the trap near the nanowire.
Keywords
Silicon nanowire; random telegraph noise; single-hole-tunneling;
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