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Jitter Analysis of CMOS Ring Oscillator Due to 1/f Noise of MOSFET  

Park Se-Hoon (안동대학교 전자정보산업학부 전자공학전공)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.8, no.8, 2004 , pp. 1713-1718 More about this Journal
Abstract
It has been known that 1/f noise of MOSFET is generated by the superposition of single random telelgraph signals (RTS). In this study, jitters caused by 1/f noise of MOSFET are analysed with RTS supplied to all of the nodes of the CMOS ring oscillator under investigation. Through the analysis of the variations of jitters and jitter ratios with varying values of the amplitude of RTS, it is found that the jitters and the jitter ratios are proportional to the amplitude of RTS. And the analysis of FFT of the outputs of the ring oscillator reveals that the jitters are closely related to the phase noise of the high order harmonics of the ring oscillator outputs.
Keywords
1/f noise; Random Telegraph Signal(RTS); Jitter;
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