• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2004.05b
• /
• pp.682-684
• /
• 2004

The effect of 1/f noise by the random telegraph signal(RTS) on the phase noise and the jitter of CMOS ring Oscillator is investigated. 10 parallel piece-wise-linear current sources connected to each node model the RTS signals. The In, the power spectral density and the jitter of output of the ring oscillator are simulated as functions of the amplitude and time constant of RTS current source. It is confirmed that the increase of amplitude of RTS is directly related to the increase of the width of phase noise md the value of jitter. The shorter the time constant is, the wider width of FET peak and the larger value of cycle to cycle jitter are.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.2
• /
• pp.185-190
• /
• 2016

A 70-${\AA}$ nanowire field-effect transistor (FET) for sub-10-nm CMOS technology is designed and simulated in order to investigate the impact of an oxide trap on random telegraph noise (RTN) in the device. It is observed that the drain current fluctuation (${\Delta}I_D/I_D$) increases up to a maximum of 78 % due to the single electron trapping. In addition, the effect of various trap positions on the RTN in the nanowire FET is thoroughly analyzed at various drain and gate voltages. As the drain voltage increases, the peak point for the ${\Delta}I_D/I_D$ shifts toward the source side. The distortion in the electron carrier density and the conduction band energy when the trap is filled with an electron at various positions in the device supports these results.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2003.10a
• /
• pp.606-609
• /
• 2003

It is known that 1/f noise of MOSFET is generated by superposition of single Random Telelgraph Signal (RTS). In this study, jitter from 1/f noise of MOSFET is analysed with RTS supplied to one of the nodes of the ring oscillator under investigation. Jitter rates are investigated as the number of stage, power supply voltage, and the amplitude of RTS change.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.4
• /
• pp.365-375
• /
• 2014

This paper proposes an abnormal V-shaped-error-free non-blind deconvolution technique featuring an adaptively segmented forward-problem based iterative deconvolution (ASDCN) process. Unlike the algebraic based inverse operations, this eliminates any operations of differential and division by zero to successfully circumvent the issue on the abnormal V-shaped error. This effectiveness has been demonstrated for the first time with applying to a real analysis for the effects of the Random Telegraph Noise (RTN) and/or Random Dopant Fluctuation (RDF) on the overall SRAM margin variations. It has been shown that the proposed ASDCN technique can reduce its relative errors of RTN deconvolution by $10^{13}$ to $10^{15}$ fold, which are good enough for avoiding the abnormal ringing errors in the RTN deconvolution process. This enables to suppress the cdf error of the convolution of the RTN with the RDF (i.e., fail-bit-count error) to $1/10^{10}$ error for the conventional algorithm.

• IEIE Transactions on Smart Processing and Computing
• /
• v.2 no.4
• /
• pp.216-225
• /
• 2013

This paper discusses the issues regarding an abnormal V-shaped error confronting algebraic-based deconvolution process. Deconvolution was applied to an analysis of the effects of the Random Telegraph Noise (RTN) and Random Dopant Fluctuation (RDF) on the overall SRAM margin variations. This paper proposes a technique to suppress the problematic phenomena in the algebraic-based RDF/RTN deconvolution process. The proposed technique can reduce its relative errors by $10^{10}$ to $10^{16}$ fold, which is a sufficient reduction for avoiding the abnormal ringing errors in the RTN deconvolution process. The proposed algebraic-based analyses allowed the following: (1) detection of the truncating point of the TD-MV distributions by the screening test, and (2) predicting the MV-shift-amount by the assisted circuit schemes needed to avoid the out of specs after shipment.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.8 no.8
• /
• pp.1713-1718
• /
• 2004

It has been known that 1/f noise of MOSFET is generated by the superposition of single random telelgraph signals (RTS). In this study, jitters caused by 1/f noise of MOSFET are analysed with RTS supplied to all of the nodes of the CMOS ring oscillator under investigation. Through the analysis of the variations of jitters and jitter ratios with varying values of the amplitude of RTS, it is found that the jitters and the jitter ratios are proportional to the amplitude of RTS. And the analysis of FFT of the outputs of the ring oscillator reveals that the jitters are closely related to the phase noise of the high order harmonics of the ring oscillator outputs.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.11 no.2
• /
• pp.80-87
• /
• 2011

Low temperature hole transport characteristics of gate-all-around p-channel metal oxide semiconductor (PMOS) type silicon nanowire field-effect-transistors with the radius of 5 nm and lengths of 44-46 nm are presented. They show coexisting two single hole states randomly switching between each other. Analysis of Coulomb diamonds of these two switching states reveals a variety of electrostatic effects which is originated by the potential of a single hole captured in the trap near the nanowire.

• Journal of the Korean Vacuum Society
• /
• v.21 no.3
• /
• pp.151-157
• /
• 2012

The two dimensional electron gas system based on GaAs/$Al_xGa_{1-x}As$ heterostructure is widely used for fabricating quantum structures such as quantum dot, quantum point contact, electron interferometer and so on. However the conductance of the device is usually unstable due to the presence of random telegraph noise in the device. To overcome such problem, we have studied the effect of surface state on the stability of the device by altering the surface state of the device with oxygen plasma. The dramatic improvement of the device stability has been observed after cleaning the device surface with oxygen plasma (by 50 W~120 W plasma power) for 30 sec followed by etching in HCl : $H_2O$ (1 : 3) solution.

• Journal of Sensor Science and Technology
• /
• v.14 no.1
• /
• pp.42-46
• /
• 2005

It has been known that 1/f noise of MOSFET is generated by superposition of random telelgraph signals (RTS). In this study, jitters and phase noise caused by 1/f noise of MOSFET are analysed with RTS supplied to all of the nodes of the CMOS ring oscillator under investigation. Through the analysis of jitters and jitter ratios with varying values of the amplitude of RTS, it is found that the jitters and the jitter ratios are proportional to the amplitude of RTS. And the analysis of FFT of the output of the ring oscillator reveals that the jitters are closely related to the phase noise of the high order harmonics of the ring oscillator outputs.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.1
• /
• pp.38-42
• /
• 2006

We report 1/f noise PSD(Power Spectrum Density) of sub-100 nm MOSFETs as a function of various parameters such as HCS (Hot Carrier Stress), bias condition, temperature, device size and types of MOSFETs. The noise spectra of sub-100 nm devices showed Lorentzian-like noise spectra. We could check roughly the position of a dominant noise source by changing $V_{DS}$. With increasing measurement temperature, the 1/f noise PSD of 50 nm PMOS device decreases, but there is no decrease in the noise of NMOS device. RTN (Random Telegraph Noise) was measured from the device that shows clearly a Lorentzian-like noise spectrum in 1/f noise spectrum.