• Title/Summary/Keyword: Parasitic energy

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Full Wave Cockroft Walton Application for Transcranial Magnetic Stimulation

  • Choi, Sun-Seob;Kim, Whi-Young
    • Journal of Magnetics
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    • v.16 no.3
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    • pp.246-252
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    • 2011
  • A high-voltage power supply has been built for activation of the brain via stimulation using a Full Wave Cockroft-Walton Circuit (FWCW). A resonant half-bridge inverter was applied (with half plus/half minus DC voltage) through a bidirectional power transistor to a magnetic stimulation device with the capability of producing a variety of pulse forms. The energy obtained from the previous stage runs the transformer and FW-CW, and the current pulse coming from the pulse-forming circuit is transmitted to a stimulation coil device. In addition, the residual energy in each circuit will again generate stimulation pulses through the transformer. In particular, the bidirectional device modifies the control mode of the stimulation coil to which the current that exceeds the rated current is applied, consequently controlling the output voltage as a constant current mode. Since a serial resonant half-bridge has less switching loss and is able to reduce parasitic capacitance, a device, which can simultaneously change the charging voltage of the energy-storage condenser and the pulse repetition rate, could be implemented. Image processing of the brain activity was implemented using a graphical user interface (GUI) through a data mining technique (data mining) after measuring the vital signs separated from the frequencies of EEG and ECG spectra obtained from the pulse stimulation using a 90S8535 chip (AMTEL Corporation).

Scattering Parameter-based Measurement of Planar EMI filter

  • Wang, Shishan;Gong, Min;Xu, Chenchen
    • Journal of Power Electronics
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    • v.14 no.4
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    • pp.806-813
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    • 2014
  • Planar electromagnetic interference (EMI) filters are widely used to restrain the conducted EMI of switching power supplies. Such filters are characterized by small size, low parasitic parameters, and better high-frequency performance than the passive discrete EMI filter. However, EMI filter performance cannot be exactly predicted by using existing methods. Therefore, this paper proposes a method to use scattering parameters (S-parameters) for the measurement of EMI filter performance. A planar EMI filter sample is established. From this sample, the relationship between S-parameters and insertion gain (IG) of EMI filter is derived. To determine the IG under different impedances, the EMI filter is theoretically calculated and practically measured. The differential structure of the near-field coupling model is also deduced, and the IG is calculated under standard impedance conditions. The calculated results and actual measurements are compared to verify the feasibility of the theory.

Torque-Angle-Based Direct Torque Control for Interior Permanent-Magnet Synchronous Motor Drivers in Electric Vehicles

  • Qiu, Xin;Huang, Wenxin;Bu, Feifei
    • Journal of Power Electronics
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    • v.13 no.6
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    • pp.964-974
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    • 2013
  • A modified direct torque control (DTC) method based on torque angle is proposed for interior permanent-magnet synchronous motor (IPMSM) drivers used in electric vehicles (EVs). Given the close relationship between torque and torque angle, proper voltage vectors are selected by the proposed DTC method to change the torque angle rapidly and regulate the torque quickly. The amplitude and angle of the voltage vectors are determined by the torque loop and stator flux-linkage loop, respectively, with the help of the position of the stator flux linkage. Furthermore, to satisfy the torque performance request of EVs, the nonlinear dead-time of the invertor caused by parasitic capacitances is considered and compensated to improve steady torque performance. The stable operation region of the IPMSM DTC driver for voltage and current limits is investigated for reliability. The experimental results prove that the proposed DTC has good torque performance with a brief control structure.

Design and Efficiency Analysis 48V-12V Converter using Gate Driver Integrated GaN Module (게이트 드라이버가 집적된 GaN 모듈을 이용한 48V-12V 컨버터의 설계 및 효율 분석)

  • Kim, Jongwan;Choe, Jung-Muk;Alabdrabalnabi, Yousef;Lai, Jih-Sheng Jason
    • The Transactions of the Korean Institute of Power Electronics
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    • v.24 no.3
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    • pp.201-206
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    • 2019
  • This study presents the design and experimental result of a GaN-based DC-DC converter with an integrated gate driver. The GaN device is attractive to power electronic applications due to its superior device performance. However, the switching loss of a GaN-based power converter is susceptible to the common source inductance, and converter efficiency is severely degraded with a large loop inductance. The objective of this study is to achieve high-efficiency power conversion and the highest power density using a multiphase integrated half-bridge GaN solution with minimized loop inductance. Before designing the converter, several GaN and Si devices were compared and loss analysis was conducted. Moreover, the impact of common source inductance from layout parasitic inductance was carefully investigated. Experimental test was conducted in buck mode operation at 48 -12 V, and results showed a peak efficiency of 97.8%.

Effect of poly-Si Thickness and Firing Temperature on Metal Induced Recombination and Contact Resistivity of TOPCon Solar Cells (Poly-Si 두께와 인쇄전극 소성 온도가 TOPCon 태양전지의 금속 재결합과 접촉비저항에 미치는 영향)

  • Lee, Sang Hee;Yang, Hee Jun;Lee, Uk Chul;Lee, Joon Sung;Song, Hee-eun;Kang, Min Gu;Yoon, Jae Ho;Park, Sungeun
    • Current Photovoltaic Research
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    • v.9 no.4
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    • pp.128-132
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    • 2021
  • Advances in screen printing technology have been led to development of high efficiency silicon solar cells. As a post PERx structure, an n-type wafer-based rear side TOPCon structure has been actively researched for further open-circuit voltage (Voc) improvement. In the case of the metal contact of the TOPCon structure, the poly-Si thickness is very important because the passivation of the substrate will be degraded when the metal paste penetrates until substrate. However, the thin poly-Si layer has advantages in terms of current density due to reduction of parasitic absorption. Therefore, poly-Si thickness and firing temperature must be considered to optimize the metal contact of the TOPCon structure. In this paper, we varied poly-Si thickness and firing peak temperature to evaluate metal induced recombination (Jom) and contact resistivity. Jom was evaluated by using PL imaging technique which does not require both side metal contact. As a results, we realized that the SiNx deposition conditions can affect the metal contact of the TOPCon structure.

Design and Performance Evaluation of M×M MIMO Transmission in ESPAR Antenna (ESPAR 안테나에서 M×M MIMO 송신방식의 설계와 성능 평가)

  • Bok, Junyeong;Lee, Seung Hwan;Ryu, Heung-Gyoon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.38A no.12
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    • pp.1061-1068
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    • 2013
  • In this paper, we propose a $M{\times}M$ beam-space multiple input multiple output (BS-MIMO) system using electronically steerable parasitic array radiator (ESPAR) antenna. Conventional MIMO method required multiple RF chains because it map the transmission signals onto multiple antennas. So, conventional MIMO system has high cost for design and high energy consumption at RF circuit. Also, It is difficult to use MIMO system in battery based mobile terminals with limited physical area. In order to solve these problems, BS-MIMO technique which map the data signal onto bases in beam space domain was proposed using ESPAR antenna with single RF chain. This paper, we design and analyze the performance of extended $M{\times}M$ BS-MIMO technique. Simulation results show that the proposed BS-MIMO system has similar BER performance compare to conventional MIMO scheme. Therefore, BS-MIMO system with single RF chain will has a low RF power consumption and low cost for RF hardware design as compared with conventional MIMO technique with multiple RF chains.

The solar cell modeling using Lambert W-function (Lambert W 함수를 이용한 태양전지 모델링)

  • Bae, Jong-Guk;Kang, Gi-Hwan;Kim, Kyung-Soo;Yu, Gwon-Jong;Ahn, Hyung-Geun;Han, Deuk-Young
    • 한국태양에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.278-281
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    • 2011
  • This system can predict the maximum output about all illumination levels so that the PV system designer can design the system having the best efficiency. For the output prediction exact about the solar cell, that is the device the basis most in the PV system, the basis has to be in order to try this way. The solution based on Lambert W-function are presented to express the transcendental current-voltage characteristic containing parasitic power consuming parameters like series and shunt resistances. A simple and efficient method for the extraction of a single current-voltage (I-V) curve under the constant illumination level is proposed. With the help of the Lambert W function, the explicit analytic expression for I is obtained. And the explicit analytic expression for V is obtained. This analytic expression is directly used to fit the experimental data and extract the device parameters. The I-V curve of the solar cell was expressed through the modeling using Lambert W-function and the numerical formula where there is the difficulty could be logarithmically expressed This method expresses with the I-V curve through the modeling using Lambert W-function which adds other loss ingredients to the equation2 as to the research afterward. And the solar cell goes as small and this I-V curve can predict the power penalty in the system unit.

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A Design of High-speed Power-off Circuit and Analysis (고속 전원차단 회로 설계 제작 및 측정)

  • Jeong, Sang-Hun;Lee, Nam-Ho;Cho, Seong-Ik
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.63 no.4
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    • pp.490-494
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    • 2014
  • In this paper, a design of high-speed power-off circuit and analysis. The incidence of high-dose transient radiation into the silicon-based semiconductor element induces the photocurrent due to the creation of electron-hole pairs, which causes the upset phenomenon of active elements or triggers the parasitic thyristor in the element, resulting in latch-up. High speed power-off circuit was designed to prevent burn-out of electronic device caused by Latch-up. The proposed high speed power-off circuit was configured with the darlington transistor and photocoupler so that the power was interrupted and recovered without the need for an additional circuit, in order to improve the existing problem of SCR off when using the thyristor. The discharge speed of the high speed power interruption circuit was measured to be 19 ${\mu}s$ with 10 ${\mu}F$ and 500 ${\Omega}$ load, which was 98% shorter than before (12.8 ms).

New Approach for Transient Radiation SPICE Model of CMOS Circuit

  • Jeong, Sang-Hun;Lee, Nam-Ho;Lee, Jong-Yeol;Cho, Seong-Ik
    • Journal of Electrical Engineering and Technology
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    • v.8 no.5
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    • pp.1182-1187
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    • 2013
  • Transient radiation is emitted during a nuclear explosion and causes fatal errors as upset and latch-up in CMOS circuits. This paper proposes the transient radiation SPICE models of NMOS, PMOS, and INVERTER based on the transient radiation analysis using TCAD (Technology Computer Aided Design). To make the SPICE model of a CMOS circuit, the photocurrent in the PN junction of NMOS and PMOS was replaced as current source, and a latch-up phenomenon in the inverter was applied using a parasitic thyristor. As an example, the proposed transient radiation SPICE model was applied to a CMOS NAND circuit. The CMOS NAND circuit was simulated by SPICE and TCAD using the 0.18um CMOS process model parameter. The simulated results show that the SPICE results were similar to the TCAD simulation and the test results of commercial CMOS NAND IC. The simulation time was reduced by 120 times compared to the TCAD simulation.

A Study of the Effect of Compressor Performance Map on the Efficiency of High-pressure Operating PEMFC Systems in Automotive Applications (압축기 성능 맵이 자동차용 가압형 고분자전해질형 연료전지 시스템 효율에 미치는 영향 연구)

  • Cho, Donghoon;Kim, Han-Sang
    • Transactions of the Korean hydrogen and new energy society
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    • v.23 no.6
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    • pp.604-611
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    • 2012
  • For the commercialization of fuel cell powered vehicle, it is highly important to improve the performance and efficiency of an automotive polymer electrolyte membrane fuel cell (PEMFC) system. The performance and efficiency of PEMFC systems are significantly influenced by their operating conditions. Among these conditions, the system operating pressure is considered as the one of the main factors. In this study, to investigate the effects of operating pressure on the performance and efficiency of automotive PEMFC systems, two types of high-pressure operating PEMFC systems adopting two different compressors (i. e. different performance maps) are modeled by using MATLAB/Simulink environment. The PEMFC system efficiency and parasitic compressor power are mainly analyzed and compared for the two types of high-pressure operating PEMFC systems under the same system net power conditions. It is expected that this kind of study can contribute to provide basic insight into the operating strategies of high-pressure operating PEMFC systems for automotive use.