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http://dx.doi.org/10.6113/TKPE.2019.24.3.201

Design and Efficiency Analysis 48V-12V Converter using Gate Driver Integrated GaN Module  

Kim, Jongwan (Future Energy Electronics Center, Virginia Polytechnic Institute and State University)
Choe, Jung-Muk (United Technologies Research Center)
Alabdrabalnabi, Yousef (Future Energy Electronics Center, Virginia Polytechnic Institute and State University)
Lai, Jih-Sheng Jason (Future Energy Electronics Center, Virginia Polytechnic Institute and State University)
Publication Information
The Transactions of the Korean Institute of Power Electronics / v.24, no.3, 2019 , pp. 201-206 More about this Journal
Abstract
This study presents the design and experimental result of a GaN-based DC-DC converter with an integrated gate driver. The GaN device is attractive to power electronic applications due to its superior device performance. However, the switching loss of a GaN-based power converter is susceptible to the common source inductance, and converter efficiency is severely degraded with a large loop inductance. The objective of this study is to achieve high-efficiency power conversion and the highest power density using a multiphase integrated half-bridge GaN solution with minimized loop inductance. Before designing the converter, several GaN and Si devices were compared and loss analysis was conducted. Moreover, the impact of common source inductance from layout parasitic inductance was carefully investigated. Experimental test was conducted in buck mode operation at 48 -12 V, and results showed a peak efficiency of 97.8%.
Keywords
GaN device; Common source inductance; Synchronous buck converter; Power loss calculation;
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  • Reference
1 Z. Wang, J. Honea, Y. Shi, and H. Li, "Investigation of driver circuits for GaN HEMTs in leaded packages," in 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 81-87, 2014.
2 EPC, "Enhancement mode power transistor," EPC2021, Jun. 2014.
3 GaN Systems, "100V enhancement mode GaN transistor," GS61008P, Aug. 2014.
4 Infineon, "OptiMOS 5 power-transistor, 80V," IPB017N08N5, May 2014.
5 Texas Instrument, "LMG5200 80-V, GaN half-bridge power stage," LMG5200, Jan. 2016.
6 "Power loss calculation with common source inductance consideration for synchronous buck converters." Texas Instrument, July 2011. Web.
7 J. S. Lai, X. Huang, E. Pepa, S. Chen, and T. W. Nehl, "Inverter EMI modeling and simulation methodologies," IEEE Transactions on Industrial Electronics, Vol. 53, pp. 736-744, 2006.   DOI
8 J. S. Lai, "Wide bandgap semiconductor devices," ECE 6204-Spring Lecture Note 5, pp. 18, 2017.
9 D. Han and B. Sarlioglu, "Understanding the influence of dead-time on GaN based synchronous boost converter," in Wide Bandgap Power Devices and Applications (WiPDA), 2014 IEEE Workshop, pp. 70-74, 2014.