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http://dx.doi.org/10.21218/CPR.2021.9.4.128

Effect of poly-Si Thickness and Firing Temperature on Metal Induced Recombination and Contact Resistivity of TOPCon Solar Cells  

Lee, Sang Hee (Photovoltaics Laboratory, Korea Institute of Energy Research)
Yang, Hee Jun (Photovoltaics Laboratory, Korea Institute of Energy Research)
Lee, Uk Chul (Photovoltaics Laboratory, Korea Institute of Energy Research)
Lee, Joon Sung (Hanvixolar Inc.)
Song, Hee-eun (Photovoltaics Laboratory, Korea Institute of Energy Research)
Kang, Min Gu (Photovoltaics Laboratory, Korea Institute of Energy Research)
Yoon, Jae Ho (Photovoltaics Laboratory, Korea Institute of Energy Research)
Park, Sungeun (Photovoltaics Laboratory, Korea Institute of Energy Research)
Publication Information
Current Photovoltaic Research / v.9, no.4, 2021 , pp. 128-132 More about this Journal
Abstract
Advances in screen printing technology have been led to development of high efficiency silicon solar cells. As a post PERx structure, an n-type wafer-based rear side TOPCon structure has been actively researched for further open-circuit voltage (Voc) improvement. In the case of the metal contact of the TOPCon structure, the poly-Si thickness is very important because the passivation of the substrate will be degraded when the metal paste penetrates until substrate. However, the thin poly-Si layer has advantages in terms of current density due to reduction of parasitic absorption. Therefore, poly-Si thickness and firing temperature must be considered to optimize the metal contact of the TOPCon structure. In this paper, we varied poly-Si thickness and firing peak temperature to evaluate metal induced recombination (Jom) and contact resistivity. Jom was evaluated by using PL imaging technique which does not require both side metal contact. As a results, we realized that the SiNx deposition conditions can affect the metal contact of the TOPCon structure.
Keywords
TOPCon; Screen printed metal contact; Metal induced recombination; Photoluminescence imaging; Contact resistivity;
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