Current Photovoltaic Research

Korea Photovoltaic Society (한국태양광발전학회)
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Effect of poly-Si Thickness and Firing Temperature on Metal Induced Recombination and Contact Resistivity of TOPCon Solar Cells

Poly-Si 두께와 인쇄전극 소성 온도가 TOPCon 태양전지의 금속 재결합과 접촉비저항에 미치는 영향

  • Lee, Sang Hee (Photovoltaics Laboratory, Korea Institute of Energy Research) ;
  • Yang, Hee Jun (Photovoltaics Laboratory, Korea Institute of Energy Research) ;
  • Lee, Uk Chul (Photovoltaics Laboratory, Korea Institute of Energy Research) ;
  • Lee, Joon Sung (Hanvixolar Inc.) ;
  • Song, Hee-eun (Photovoltaics Laboratory, Korea Institute of Energy Research) ;
  • Kang, Min Gu (Photovoltaics Laboratory, Korea Institute of Energy Research) ;
  • Yoon, Jae Ho (Photovoltaics Laboratory, Korea Institute of Energy Research) ;
  • Park, Sungeun (Photovoltaics Laboratory, Korea Institute of Energy Research)
  • 이상희 (한국에너지기술연구원 태양광 연구단) ;
  • 양희준 (한국에너지기술연구원 태양광 연구단) ;
  • 이욱철 (한국에너지기술연구원 태양광 연구단) ;
  • 이준성 (한빅솔라(주)) ;
  • 송희은 (한국에너지기술연구원 태양광 연구단) ;
  • 강민구 (한국에너지기술연구원 태양광 연구단) ;
  • 윤재호 (한국에너지기술연구원 태양광 연구단) ;
  • 박성은 (한국에너지기술연구원 태양광 연구단)
  • Received : 2021.09.16
  • Accepted : 2021.10.29
  • Published : 2021.12.31
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Abstract

Advances in screen printing technology have been led to development of high efficiency silicon solar cells. As a post PERx structure, an n-type wafer-based rear side TOPCon structure has been actively researched for further open-circuit voltage (Voc) improvement. In the case of the metal contact of the TOPCon structure, the poly-Si thickness is very important because the passivation of the substrate will be degraded when the metal paste penetrates until substrate. However, the thin poly-Si layer has advantages in terms of current density due to reduction of parasitic absorption. Therefore, poly-Si thickness and firing temperature must be considered to optimize the metal contact of the TOPCon structure. In this paper, we varied poly-Si thickness and firing peak temperature to evaluate metal induced recombination (Jom) and contact resistivity. Jom was evaluated by using PL imaging technique which does not require both side metal contact. As a results, we realized that the SiNx deposition conditions can affect the metal contact of the TOPCon structure.

Keywords

Acknowledgement

본 논문의 내용은 2021년도 정부(산업통상자원부)의 재원으로 한국에너지기술평가원의 지원을 받아 수행된 연구임(20183030019460, c-Si 태양전지용 고속 인쇄 전극 공정에 의한 7,000wph급 제조능력을 갖는 고생산성 프린터 개발).

References

  1. D. Chen et al., "24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design," Solar Energy Materials and Solar Cells, 206, p. 110258 (2020). https://doi.org/10.1016/j.solmat.2019.110258
  2. F. Feldmann, M. Bivour, C. Reichel, M. Hermle, and S. W. Glunz, "Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics," Solar energy materials and solar cells, 120, pp. 270-274 (2014). https://doi.org/10.1016/j.solmat.2013.09.017
  3. P. Stradins et al., "Passivated tunneling contacts to n-type wafer silicon and their implementation into high performance solar cells," National Renewable Energy Lab. (NREL), Golden, CO (United States) (2014).
  4. A. Moldovan et al., "Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers grown by photo-oxidation or wet-chemical oxidation in ozonized water," Conference Proceedings, 42nd IEEE PVSC, pp. 1-6 (2015).
  5. Y.-W. Ok et al., "Screen printed, large area bifacial N-type back junction silicon solar cells with selective phosphorus front surface field and boron doped poly-Si/SiOx passivated rear emitter," Applied Physics Letters, 113(26), p. 263901 (2018). https://doi.org/10.1063/1.5059559
  6. A. Rohatgi et al., "Fabrication and modeling of high-efficiency front junction n-type silicon solar cells with tunnel oxide passivating back contact," IEEE Journal of Photovoltaics, 7(5), pp. 1236-1243 (2017). https://doi.org/10.1109/JPHOTOV.2017.2715720
  7. C. Messmer, A. Fell, F. Feldmann, J. Schon, and M. Hermle, "Upgrade PERC with TOPCon: Efficiency Potential by taking into account the Electrical Gains and Optical Losses," Conference Proceedings, 36th EU PVSEC (2019).
  8. C. Messmer, A. Fell, F. Feldmann, N. Wohrle, J. Schon, and M. Hermle, "Efficiency roadmap for evolutionary upgrades of PERC solar cells by TOPCon: impact of parasitic absorption," IEEE Journal of Photovoltaics, 10, pp. 335-342 (2019). https://doi.org/10.1109/jphotov.2019.2957642
  9. H. E. Ciftpinar, M. K. Stodolny, Y. Wu, G. J. Janssen, J. Loffler, J. Schmitz, et al., "Study of screen printed metallization for polysilicon based passivating contacts," Energy Procedia, 124, pp. 851-861 (2017). https://doi.org/10.1016/j.egypro.2017.09.242
  10. T. Fellmeth, A. Born, A. Kimmerle, F. Clement, D. Biro, and R. Preu, "Recombination at metal-emitter interfaces of front contact technologies for highly efficient silicon solar cells," Energy Procedia, 8, pp. 115-121 (2011). https://doi.org/10.1016/j.egypro.2011.06.111
  11. R. A. Sinton, A. Cuevas, and M. Stuckings, "Quasi-steady-state photoconductance, a new method for solar cell material and device characterization," Conference Proceedings, 25th IEEE PVSC, pp. 457-460 (1996).
  12. M. Stodolny, Y. Wu, J. Anker, X. Lu, J. Liu, P. Bronsveld, et al., "PolySi based passivating contacts enabling industrial silicon solar cell efficiencies up to 24%," Conference Proceedings, 46th IEEE PVSC, pp. 1456-1459 (2019).
  13. S. Mack, J. Schube, T. Fellmeth, F. Feldmann, M. Lenes, and J. M. Luchies, "Metallisation of boron-doped polysilicon layers by screen printed silver pastes," physica status solidi (RRL)-Rapid Research Letters, 11, p. 1700334 (2017). https://doi.org/10.1002/pssr.201700334