• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.9 s.351
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• pp.1-9
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• 2006

In the System-on-Chip(SoC) design, the global wires are critical parts for the performance. Therefore, the global wires need to be pipelined using flip-flops or latches. Since the timing constraint of the latch is more flexible than it of the flip-flop, the latch-based design can provide a better solution for the clock period. Retiming is an optimizing technique which repositions memory elements in the circuits to reduce the clock period. Traditionally, retiming is used on gate-level netlist, but retiming for SoC is used on macro-level netlist. In this paper, we extend the previous work of retiming for SoC using flip-flops to retiming for SoC using single-phase clocked latches. In this paper we propose a MILP for retiming for SoC using single-phase clocked latches, and apply the fixpoint computation to solve it. Experimental results show that retiming for SoC using latches reduces the clock period of circuits by average 10 percent compared with retiming for SoC using flip-flops.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.1-6
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• 2009

The holding voltage of high-voltage devices under the snapback breakdown condition has been known to be much smaller than the operating voltage. Such characteristics cause high-voltage ICs to be susceptible to the transient latch-up failure in the practical system applications, especially when these devices are used as the ESD(ElectroStatic Discharge) power clamp circuit. A new latchup-free design of the ESD power clamp circuit with stacked-bipolar devices is proposed and successfully verified in a $0.35{\mu}m$ 3.3V/60V BCD(Bipolar-CMOS-DMOS) process to achieve the desired ESD level. The total holding voltage of the stacked-bipolar devices in the snapback breakdown condition can be larger than the operating voltage. Proposed power clamp operates safely because of the high holding voltage. From the measurement on the devices fabricated using a $0.35{\mu}m$ BCD Process, it was observed that the proposed ESD power clamp can provide 800% higher ESD robustness per silicon area as compared to the conventional clamps with a high-voltage diode.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.2
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• pp.6-12
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• 1998

Thin film SOI(Silicon-on-insulator) device offer unique advantages such as reduction in short channel effects, improvement of subthreshold slope, higher mobility, latch-up free nature, and so on. But these devices exhibit floating-body effet such as current kink which inhibits the proper device operation. In this paper, the SOI NMOSFET with a T-type gate structure is proposed to solve the above problem. To simulate the proposed device with TSUPREM-4, the part of gate oxide was considered to be 30nm thicker than the normal gate oxide. The I-V characteristics were simulated with 2D MEDICI. Since part of gate oxide has different oxide thickness, the gate electric field strength is not same throughout the gate and hence the impact ionization current is reduced. The current kink effect will be reduced as the impact ionization current drop. The reduction of current kink effect for the proposed device structure were shown using MEDICI by the simulation of impact ionization current, I-V characteristics, and hole current distribution.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.48-54
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• 1999

We designed the optimal device parameters of the retrograde well and the gettering layer(buried layer) using the high energy ion implantation for the next generation of CMOS struoture and proposed two models and simulated these models with Athena and Atlas, Silvaco Co. We obtained trigger currents which is more than 600 ${\mu}A/{\mu}m$ when the structure has been combined the gettering layer and the retrograde well. And the second model(twin retrograde well) was obtained that holdingcurrents were over 2500${\mu}A/{\mu}m$. As results, the more heavier dose, the more improved the latch-up immunity. The n'-p' spacing was fixed a 2${\mu}m$ in both models.

• Journal of the Korea Institute of Military Science and Technology
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• v.10 no.4
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• pp.5-11
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• 2007

The future combat system is likely to be studied and developed in terms of enhancing both firepower and mobility simultaneously. Increased firepower often necessitates a heavier firing system. In return, the body of the vehicle needs to be light-weight in order to improve the mobility of the whole system. For this reason, in the areas of weapons systems such as the tank and self-propelled artillery, a number of studies attempting to develop designs that reduce recoil force against the body of the vehicle are being conducted. The current study proposes a tank construction that has a mass-spring-damper system with two degrees of freedom. A tank structure mounted with a specific soft recoil system that was implemented using a soft recoil technique and another tank structure based on a general recoil technique were compared to each other in order to analyze the recoil forces, the displacements of recoil, and the firing intervals when they were firing. MATLAB-Simulink was used as a simulating tool. In addition, the relationship between the movement of the recoil parts and the positions of the recoil latches in each of the two structures were analyzed. The recoil impact power, recoil displacement, firing interval, and so on were derived as functional formulas based on the position of the recoil latch.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.34-41
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• 1999

In this paper, hot carrier induced performance degradation of peripheral circuits in memory devices such as static type imput buffer, latch type imput buffer and sense amplifier circuit has been measured and analyzed. The used design and fabrication of the peripheral circuits were $0.8 {\mu}m$ standard CMOS process. The analysis method is to find out which device is most significantly degraded in test circuits by using spice simulation, and then to characterize the correlation between device and circuit performance degradation. From the result of the performance degradation of static type input buffer, the trip point was increased due to the transconductance degradation of NMOS. In the case of latch type input buffer, there was a time delay due to the transconductance degradation of NMOS device. Finally, hot carrier induced the decrease of half-Vcc voltage and the increased of sensing voltage in sense amplifier circuits have been measured.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.12
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• pp.1345-1352
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• 2014

Bus architecture of SoC has been replaced by NoC in recent years. Noc uses the multi-clock domains to transmit and receive data between neighbor network interfaces and they have same frequency, but a phase difference because of clock skew. So a synchronizer is used for a mesochronous frequency in interconnection between network interfaces. In this paper the metastability is defined and analyzed in a D latch and a D flip-flop to search the possibilities that data can be lost in the process of sending and receiving data between interconnects when a local frequency and a transmitted frequency have a phase difference. 180nm CMOS model parameter and 1GHz are used to simulate them in HSpice. The simulation results show that the metastability happens in a latch and a flip-flop when input data change near the clock edges and there are intermediate states for a longer time as input data change closer at the clock edge. And the next stage can lose input data depending on environmental conditions such as temperature, processing variations, power supply, etc. The simulation results are very useful to design a mescochronous synchronizer for NoC.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.12
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• pp.20-26
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• 1999

A CMOS 6-bit 100MSPS ADC for DBS receiver is designed. The proposed ADC is composed of folding block, latch block, and digital block. The cascode interpolating block and kickback reduced latch are proposed with a high speed architecture. To verify the performance of ADC, simulations are carried out by HSPICE. The ADC achieves a clock frequency of 100MHz with a power dissipation of 40mW for 3 V supply voltage. The active chip area is $1500{\mu}m{\times}1000{\mu}m$with $0.65{\mu}m$ 2-poly 2-metal CMOS process. Further, INL and DNL are within ${\pm}0.6LSB$, ${\pm}0.5LSB$, respectively. SNDR is about 33dB at 10MHz input frequency.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.6
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• pp.85-90
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• 2013

In this paper, 6bit SAR ADC tolerant to ionizing radiation is presented. Radiation tolerance is achieved by using the Dummy Gate Assisted (DGA) MOSFET which was proposed to suppress the leakage current induced by ionizing radiation and its comparing sample is designed with the conventional MOSFET. The designed ADC consists of binary capacitor DAC, dynamic latch comparator, and digital logic and was fabricated using a standard 0.35um CMOS process. Irradiation was performed by Co-60 gamma ray. After the irradiation, ADC designed with the conventional MOSFET did not operate properly. On the contrary, ADC designed with the DGA MOSFET showed a little parametric degradation of which DNL was increased from 0.7LSB to 2.0LSB and INL was increased from 1.8LSB to 3.2LSB. In spite of its parametric degradation, analog to digital conversion in the ADC with DGA MOSFET was found to be possible.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.4A
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• pp.439-446
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• 2004

This paper describes high speed and low power design techniques for an 8-bit 500MSamples/s CMOS 2-step ADC. Instead of the conventional closed-loop architecture, the newly proposed ADC adopts open-loop architecture and uses a reset-switch to reduce loading time in an environment of big parasitic-capacitances of mux-array. An analog-latch is also used to reduce power consumption. Simulation result shows that the ADC has the SNDR of 46.91㏈ with a input frequency of 103MHz at 500Msample/s and consumes 203㎽ with a 1.8V single power supply. The chip is designed with a 0.18mm 1-poly 6-metal CMOS technology and occupies active area of 760${\mu}{\textrm}{m}$*800${\mu}{\textrm}{m}$.